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Title: Pair creation energy and Fano factor of silicon measured at 185 K using 55 F e X-rays

Here, the pair creation energy, ωω and the Fano factor of silicon were measured using a CCD sensor and X-rays from an 55Fe source. The measurements were performed at a sensor temperature of 185K. The pair creation energy was measured for X-rays in the 1.7–6.5 keV range. The measured pair creation energy is ω=(3.650 ± 0.009) eV at the MnK α line energy. The Fano factor at this energy is F = 0.128±0.001. The agreement with theory and previous measurements is satisfactory. The system gain was obtained from flat field exposures using the Poisson distribution properties. These results and the details of our measurement procedure are presented below.
Authors:
 [1] ;  [2] ;  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Report Number(s):
BNL-205790-2018-JAAM
Journal ID: ISSN 0168-9002
Grant/Contract Number:
SC0012704
Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 901; Journal Issue: C; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; Electron–hole pair creation energy; Fano factor; CCD; X-ray
OSTI Identifier:
1456908