skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

Abstract

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes a direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.

Authors:
 [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). MESA Fabrication Facility
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1441480
Alternate Identifier(s):
OSTI ID: 1436907
Report Number(s):
SAND-2018-3433J
Journal ID: ISSN 2166-2746; 662554
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 36; Journal Issue: 3; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Henry, Michael David, Young, Travis Ryan, Douglas, Erica Ann, and Griffin, Benjamin. Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators. United States: N. p., 2018. Web. doi:10.1116/1.5023918.
Henry, Michael David, Young, Travis Ryan, Douglas, Erica Ann, & Griffin, Benjamin. Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators. United States. doi:10.1116/1.5023918.
Henry, Michael David, Young, Travis Ryan, Douglas, Erica Ann, and Griffin, Benjamin. Fri . "Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators". United States. doi:10.1116/1.5023918. https://www.osti.gov/servlets/purl/1441480.
@article{osti_1441480,
title = {Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators},
author = {Henry, Michael David and Young, Travis Ryan and Douglas, Erica Ann and Griffin, Benjamin},
abstractNote = {Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes a direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.},
doi = {10.1116/1.5023918},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 3,
volume = 36,
place = {United States},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share: