Hydrogen passivation of poly-Si/SiOx contacts for Si solar cells using Al2O3 studied with deuterium

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William; Macco, Bart; Stradins, Paul; Kessels, W. M. M.; Young, David L.

doi:10.1063/1.5031118

Title: Hydrogen passivation of poly-Si/SiO_x contacts for Si solar cells using Al₂O₃ studied with deuterium

Journal Article · Mon May 14 04:00:00 UTC 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5031118 · OSTI ID:1440399

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^[2]; Nemeth, William ^[1];

^[2]; Stradins, Paul ^[1];

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National Renewable Energy Lab. (NREL), Golden, CO (United States)
Eindhoven Univ. of Technology, Eindhoven (The Netherlands)

Here, the interplay between hydrogenation and passivation of poly-Si/SiO_x contacts to n-type Si wafers is studied using atomic layer deposited Al₂O₃ and anneals in forming gas and nitrogen. The poly-Si/SiO_x stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiO_x contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al₂O₃ is derived from its role as a hydrogen source for chemically passivating defects at SiO_x; Al₂O₃ layers are found to hydrogenate poly-Si/SiO_x much better than a forming gas anneal. By labelling Al₂O₃ and the subsequent anneal with different hydrogen isotopes, it is found that Al₂O₃ exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1440399

Report Number(s):: NREL/JA--5900-71231

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 112; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (29)

Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance Cuevas, Andrés; Sinton, Ronald A. Progress in Photovoltaics: Research and Applications, Vol. 5, Issue 2 https://doi.org/10.1002/(SICI)1099-159X(199703/04)5:2<79::AID-PIP155>3.0.CO;2-J	journal	March 1997
Physics of Solar Cells Würfel, Peter https://doi.org/10.1002/9783527618545	book	January 2005
Solar cell efficiency tables (version 51) Green, Martin A.; Hishikawa, Yoshihiro; Dunlop, Ewan D. Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 1 https://doi.org/10.1002/pip.2978	journal	December 2017
Extraction of Recombination Properties from Lifetime Data Janssen, Gaby J. M.; Wu, Yu; Tool, Kees C. J. J. Energy Procedia, Vol. 92 https://doi.org/10.1016/j.egypro.2016.07.034	journal	August 2016
Tunnel oxide passivated contacts as an alternative to partial rear contacts Feldmann, Frank; Bivour, Martin; Reichel, Christian Solar Energy Materials and Solar Cells, Vol. 131 https://doi.org/10.1016/j.solmat.2014.06.015	journal	December 2014
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells Stuckelberger, Josua; Nogay, Gizem; Wyss, Philippe Solar Energy Materials and Solar Cells, Vol. 158 https://doi.org/10.1016/j.solmat.2016.06.040	journal	December 2016
The application of poly-Si/SiOx contacts as passivated top/rear contacts in Si solar cells Feldmann, Frank; Reichel, Christian; Müller, Ralph Solar Energy Materials and Solar Cells, Vol. 159 https://doi.org/10.1016/j.solmat.2016.09.015	journal	January 2017
20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24% Huang, Haibing; Lv, Jun; Bao, Yameng Solar Energy Materials and Solar Cells, Vol. 161 https://doi.org/10.1016/j.solmat.2016.11.018	journal	March 2017
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe Solar Energy Materials and Solar Cells, Vol. 173 https://doi.org/10.1016/j.solmat.2017.06.039	journal	December 2017
Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe ACS Applied Materials & Interfaces, Vol. 8, Issue 51 https://doi.org/10.1021/acsami.6b12714	journal	December 2016
Commercial progress and challenges for photovoltaics Green, Martin A. Nature Energy, Vol. 1, Issue 1 https://doi.org/10.1038/nenergy.2015.15	journal	January 2016
Chemistry of Si‐SiO ₂ interface trap annealing Reed, Michael L.; Plummer, James D. Journal of Applied Physics, Vol. 63, Issue 12 https://doi.org/10.1063/1.340317	journal	June 1988
Influence of annealing and Al₂O₃ properties on the hydrogen-induced passivation of the Si/SiO₂ interface Dingemans, G.; Einsele, F.; Beyer, W. Journal of Applied Physics, Vol. 111, Issue 9, Article No. 093713 https://doi.org/10.1063/1.4709729	journal	May 2012
Hydrogen passivation of polycrystalline silicon thin films Scheller, L. -P.; Weizman, M.; Simon, P. Journal of Applied Physics, Vol. 112, Issue 6 https://doi.org/10.1063/1.4752268	journal	September 2012
Carrier-selective contacts for Si solar cells Feldmann, F.; Simon, M.; Bivour, M. Applied Physics Letters, Vol. 104, Issue 18 https://doi.org/10.1063/1.4875904	journal	May 2014
High-temperature degradation in plasma-enhanced chemical vapor deposition Al ₂ O ₃ surface passivation layers on crystalline silicon Kühnhold, Saskia; Saint-Cast, Pierre; Kafle, Bishal Journal of Applied Physics, Vol. 116, Issue 5 https://doi.org/10.1063/1.4891634	journal	August 2014
Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells Reichel, Christian; Feldmann, Frank; Müller, Ralph Journal of Applied Physics, Vol. 118, Issue 20 https://doi.org/10.1063/1.4936223	journal	November 2015
Deuterium passivation of grain‐boundary dangling bonds in silicon thin films Johnson, N. M.; Biegelsen, D. K.; Moyer, M. D. Applied Physics Letters, Vol. 40, Issue 10 https://doi.org/10.1063/1.92934	journal	May 1982
Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells Romer, Udo; Peibst, Robby; Ohrdes, Tobias IEEE Journal of Photovoltaics, Vol. 5, Issue 2 https://doi.org/10.1109/JPHOTOV.2014.2382975	journal	March 2015
Junction Resistivity of Carrier-Selective Polysilicon on Oxide Junctions and Its Impact on Solar Cell Performance Rienacker, Michael; Bossmeyer, Marcel; Merkle, Agnes IEEE Journal of Photovoltaics, Vol. 7, Issue 1 https://doi.org/10.1109/JPHOTOV.2016.2614123	journal	January 2017
Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects Melskens, Jimmy; van de Loo, Bas W. H.; Macco, Bart IEEE Journal of Photovoltaics, Vol. 8, Issue 2 https://doi.org/10.1109/JPHOTOV.2018.2797106	journal	March 2018
Quasi-steady-state photoconductance, a new method for solar cell material and device characterization Sinton, R. A.; Cuevas, A.; Stuckings, M. Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 https://doi.org/10.1109/PVSC.1996.564042	conference	January 1996
Passivating contacts for silicon solar cells with 800 °C stability based on tunnel-oxide and highly crystalline thin silicon layer Stuckelberger, J.; Nogay, G.; Wyss, P. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC.2016.7750100	conference	June 2016
Status and prospects of Al ₂ O ₃ -based surface passivation schemes for silicon solar cells Dingemans, G.; Kessels, W. M. M. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 4 https://doi.org/10.1116/1.4728205	journal	July 2012
SIMS measurement of hydrogen and deuterium detection limits in silicon: Comparison of different SIMS instrumentation Stevie, Fred A.; Zhou, Chaunzhen; Hopstaken, Marinus Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 34, Issue 3 https://doi.org/10.1116/1.4940151	journal	May 2016
The Evolution of Silicon Wafer Cleaning Technology Kern, Werner Journal of The Electrochemical Society, Vol. 137, Issue 6 https://doi.org/10.1149/1.2086825	journal	January 1990
High-efficiency Silicon Heterojunction Solar Cells: A Review De Wolf, Stefaan; Descoeudres, Antoine; Holman, Zachary C. green, Vol. 2, Issue 1 https://doi.org/10.1515/green-2011-0018	journal	January 2012
High-efficiency Silicon Heterojunction Solar Cells: A Review Wolf, Stefaan De; Descoeudres, Antoine; Holman, Zachary C. green, Vol. 0, Issue 0 https://doi.org/10.1515/green-2011-0039	journal	January 2012
Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells Nemeth, Bill; Young, David L.; Page, Matthew R. Journal of Materials Research, Vol. 31, Issue 6, p. 671-681 https://doi.org/10.1557/jmr.2016.77	journal	March 2016

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Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon Hallam, Brett J.; Hamer, Phill G.; Ciesla née Wenham, Alison M. Progress in Photovoltaics: Research and Applications https://doi.org/10.1002/pip.3240	journal	January 2020
Improvement of Surface Passivation of Tunnel Oxide Passivated Contact Structure by Thermal Annealing in Mixture of Water Vapor and Nitrogen Environment Zhang, Zhi; Liao, Mingdun; Huang, Yuqing Solar RRL, Vol. 3, Issue 10 https://doi.org/10.1002/solr.201900105	journal	June 2019
Hydrogenation Mechanisms of Poly‐Si/SiO _x Passivating Contacts by Different Capping Layers Truong, Thien N.; Yan, Di; Chen, Wenhao Solar RRL, Vol. 4, Issue 3 https://doi.org/10.1002/solr.201900476	journal	November 2019
Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell Hollemann, C.; Haase, F.; Rienäcker, M. Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-019-57310-0	journal	January 2020
Silicon surface passivation by transparent conductive zinc oxide van de Loo, B. W. H.; Macco, B.; Melskens, J. Journal of Applied Physics, Vol. 125, Issue 10 https://doi.org/10.1063/1.5054166	journal	March 2019
Deactivation of silicon surface states by Al-induced acceptor states from Al–O monolayers in SiO ₂ Hiller, Daniel; Jordan, Paul M.; Ding, Kaining Journal of Applied Physics, Vol. 125, Issue 1 https://doi.org/10.1063/1.5054703	journal	January 2019
Understanding the charge transport mechanisms through ultrathin SiO _x layers in passivated contacts for high-efficiency silicon solar cells Kale, Abhijit S.; Nemeth, William; Guthrey, Harvey Applied Physics Letters, Vol. 114, Issue 8 https://doi.org/10.1063/1.5081832	journal	February 2019
Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell Hollemann, C.; Haase, F.; Rienäcker, M. Berlin : Springer Nature https://doi.org/10.15488/9325	other	January 2020
Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells Hyun, Ji Yeon; Bae, Soohyun; Nam, Yoon Chung Sustainability, Vol. 11, Issue 14 https://doi.org/10.3390/su11143784	journal	July 2019

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36 MATERIALS SCIENCE
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GENERAL PHYSICS
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isotopes
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Title: Hydrogen passivation of poly-Si/SiOx contacts for Si solar cells using Al2O3 studied with deuterium

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Title: Hydrogen passivation of poly-Si/SiO_x contacts for Si solar cells using Al₂O₃ studied with deuterium