Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface
Abstract
The exact mechanism responsible for the significant enhancement of the superconducting transition temperature (Tc) of monolayer iron selenide (FeSe) films on SrTiO3 (STO) over that of bulk FeSe is an open issue. We present the results of a coordinated study of electrical transport, low temperature electron energy-loss spectroscopy (EELS), and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) measurements on FeSe/STO films of different thicknesses. HAADF-STEM imaging together with EELS mapping across the FeSe/STO interface shows direct evidence of electrons transferred from STO to the FeSe layer. The transferred electrons were found to accumulate within the first two atomic layers of the FeSe films near the STO substrate. An additional Se layer is also resolved to reside between the FeSe film and the TiOx-terminated STO substrate. Our transport results found that a positive backgate applied from STO is particularly effective in enhancing Tc of the films while minimally changing the carrier density. Furthermore, this increase in Tc is due to the positive backgate that “pulls” the transferred electrons in FeSe films closer to the interface and thus enhances their coupling to interfacial phonons and also the electron-electron interaction within FeSe films.
- Authors:
-
[1];
[2];
[3];
[5];
[4];
[5];
[4]
- Pennsylvania State Univ., University Park, PA (United States); Harbin Institute of Technology, Shenzhen (People's Republic of China)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
- Pennsylvania State Univ., University Park, PA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Pennsylvania State Univ., University Park, PA (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1439295
- Report Number(s):
- BNL-205703-2018-JAAM
Journal ID: ISSN 2375-2548
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 3; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Zhao, Weiwei, Li, Mingda, Chang, Cui -Zu, Jiang, Jue, Wu, Lijun, Liu, Chaoxing, Moodera, Jagadeesh S., Zhu, Yimei, and Chan, Moses H. W. Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface. United States: N. p., 2018.
Web. doi:10.1126/sciadv.aao2682.
Zhao, Weiwei, Li, Mingda, Chang, Cui -Zu, Jiang, Jue, Wu, Lijun, Liu, Chaoxing, Moodera, Jagadeesh S., Zhu, Yimei, & Chan, Moses H. W. Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface. United States. https://doi.org/10.1126/sciadv.aao2682
Zhao, Weiwei, Li, Mingda, Chang, Cui -Zu, Jiang, Jue, Wu, Lijun, Liu, Chaoxing, Moodera, Jagadeesh S., Zhu, Yimei, and Chan, Moses H. W. Fri .
"Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface". United States. https://doi.org/10.1126/sciadv.aao2682. https://www.osti.gov/servlets/purl/1439295.
@article{osti_1439295,
title = {Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface},
author = {Zhao, Weiwei and Li, Mingda and Chang, Cui -Zu and Jiang, Jue and Wu, Lijun and Liu, Chaoxing and Moodera, Jagadeesh S. and Zhu, Yimei and Chan, Moses H. W.},
abstractNote = {The exact mechanism responsible for the significant enhancement of the superconducting transition temperature (Tc) of monolayer iron selenide (FeSe) films on SrTiO3 (STO) over that of bulk FeSe is an open issue. We present the results of a coordinated study of electrical transport, low temperature electron energy-loss spectroscopy (EELS), and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) measurements on FeSe/STO films of different thicknesses. HAADF-STEM imaging together with EELS mapping across the FeSe/STO interface shows direct evidence of electrons transferred from STO to the FeSe layer. The transferred electrons were found to accumulate within the first two atomic layers of the FeSe films near the STO substrate. An additional Se layer is also resolved to reside between the FeSe film and the TiOx-terminated STO substrate. Our transport results found that a positive backgate applied from STO is particularly effective in enhancing Tc of the films while minimally changing the carrier density. Furthermore, this increase in Tc is due to the positive backgate that “pulls” the transferred electrons in FeSe films closer to the interface and thus enhances their coupling to interfacial phonons and also the electron-electron interaction within FeSe films.},
doi = {10.1126/sciadv.aao2682},
journal = {Science Advances},
number = 3,
volume = 4,
place = {United States},
year = {Fri Mar 16 00:00:00 EDT 2018},
month = {Fri Mar 16 00:00:00 EDT 2018}
}
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Works referencing / citing this record:
Effect of the Additional Se Layer on the Electronic Structure of Iron-Based Superconductor FeSe/SrTiO3
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