Irradiation-induced intermixing effects at the interfaces of titanium and titanium-dioxide thin films and Fe-12%Cr substrate

Mairov, A.; Sridharan, K.

doi:10.1016/j.nimb.2016.09.012

Title: Irradiation-induced intermixing effects at the interfaces of titanium and titanium-dioxide thin films and Fe-12%Cr substrate

Full Record
Other Related Research

Authors:: Mairov, A.; Sridharan, K.

Publication Date:: Tue Nov 01 00:00:00 EDT 2016

Sponsoring Org.:: USDOE

OSTI Identifier:: 1436369

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Additional Journal Information:: Journal Name: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Journal Volume: 386 Journal Issue: C; Journal ID: ISSN 0168-583X

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Mairov, A., and Sridharan, K. Irradiation-induced intermixing effects at the interfaces of titanium and titanium-dioxide thin films and Fe-12%Cr substrate.  Netherlands: N. p., 2016. 
Web.  doi:10.1016/j.nimb.2016.09.012.

Copy to clipboard


                    Mairov, A., & Sridharan, K. Irradiation-induced intermixing effects at the interfaces of titanium and titanium-dioxide thin films and Fe-12%Cr substrate.  Netherlands.  https://doi.org/10.1016/j.nimb.2016.09.012

Copy to clipboard


                    Mairov, A., and Sridharan, K. Tue .  
"Irradiation-induced intermixing effects at the interfaces of titanium and titanium-dioxide thin films and Fe-12%Cr substrate".  Netherlands.  https://doi.org/10.1016/j.nimb.2016.09.012.

Copy to clipboard


                    
@article{osti_1436369,

  title        = {Irradiation-induced intermixing effects at the interfaces of titanium and titanium-dioxide thin films and Fe-12%Cr substrate},

  author       = {Mairov, A. and Sridharan, K.},

  abstractNote = {},

  doi          = {10.1016/j.nimb.2016.09.012},

  journal      = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},

  number       = C,

  volume       = 386,

  place        = {Netherlands},

  year         = {Tue Nov 01 00:00:00 EDT 2016},

  month        = {Tue Nov 01 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1016/j.nimb.2016.09.012

Other availability

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

Journal Article Varley, J. B. ; Lordi, V. - Journal of Applied Physics

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be lessmore »« less
https://doi.org/10.1063/1.4892407
Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)₂ and Cu₂ZnSn(Se,S)₄ devices

Journal Article Varley, J. B. ; Lordi, V. - Journal of Applied Physics

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se)₂ (CIGS) or Cu₂ZnSn(S,Se)₄ (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be less effective dopants. Substitutionalmore »« less
Cited by 26
https://doi.org/10.1063/1.4892407

Full Text Available
Neutron reflectometry characterization of interface width between sol-gel titanium dioxide and silicon dioxide thin films

Journal Article Keddie, J L ; Norton, L J ; Kramer, E J ; ... - Journal of the American Ceramic Society; (United States)

Neutron reflectometry (NR) was used to directly measure the interface width between a titanium dioxide and a silicon dioxide film deposited by sol-gel processing. In a bilayer heated to 450 C, NR measurements showed that the interface width is 0.8 nm. This width is the same as the roughness of a sol-gel silicon dioxide surface after the same heat treatment, suggesting no interdiffusion or mixing at the bilayer interface.
https://doi.org/10.1111/j.1151-2916.1993.tb03978.x
Controlling and patterning the effective magnetization in Y₃Fe₅O₁₂ thin films using ion irradiation

Journal Article Brangham, J. T. ; Meng, K. Y. ; Pelekhov, D. V. ; ... - AIP Advances

We report an approach to controlling the effective magnetization (M_eff), a combination of the saturation magnetization and uniaxial anisotropy, of the ferrimagnet Y₃Fe₅O₁₂ (YIG) using different species of ions: He⁺ and Ga⁺. The effective magnetization can be tuned as a function of the fluence, with He + providing the largest effect. We quantified the change in effective magnetization through an angular dependence of the ferromagnetic resonance before and after irradiation. Increases in 4πM_eff were observed to be as much as 400 G with only a 15% increase in Gilbert damping, α (from 8.2e-4 to 9.4e-4). This result was combined withmore »« less
https://doi.org/10.1063/1.5007058

Full Text Available
Thin-film sputtering yields for Fe, Cr, and an Fe-Cr alloy measured by proton-induced x rays

Journal Article Sartwell, B D - J. Appl. Phys.; (United States)

Proton-induced x-ray emission (PIXE) was used to measure the sputtering yields of thin films bombarded by 1.0 keV Ar/sup +/ at normal incidence. The films consisted of vacuum-evaporated iron, chromium, and an Fe-Cr alloy. An integral approximation to the theoretical x-ray yield equation was developed that resulted in the determination of the thicknesses of the thin films. In general, this appoximation can be used to measure film thicknesses up to several hundred nanometers. The sputtering yields were determined by measuring the slope of the straight-line fit to the experimental data which was obtained as film thickness versus accumulated sputtering charge.more »« less
https://doi.org/10.1063/1.325980

Similar Records