Bursting at the Seams: Rippled Monolayer Bismuth on NbSe2

Fang, Alan; Adamo, Carolina; Jia, Shuang; Cava, Robert J.; Wu, Shu-Chun; Felser, Claudia; Kapitulnik, Aharon

doi:10.1126/sciadv.aaq0330

Title: Bursting at the Seams: Rippled Monolayer Bismuth on NbSe₂

Journal Article · Fri Apr 13 00:00:00 EDT 2018 · Science Advances

DOI: https://doi.org/10.1126/sciadv.aaq0330 · OSTI ID:1430225

Fang, Alan ^[1]; Adamo, Carolina ^[2]; Jia, Shuang ^[3]; Cava, Robert J. ^[3]; Wu, Shu-Chun ^[4]; Felser, Claudia ^[4]; Kapitulnik, Aharon ^[5]

SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; Stanford Univ., CA (United States). Dept. of Applied Physics
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; Stanford Univ., CA (United States). Dept. of Applied Physics
Princeton Univ., NJ (United States). Dept. of Chemistry
Max Planck Inst. for Chemical Physics of Solids, Dresden (Germany)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; Stanford Univ., CA (United States). Dept. of Applied Physics; Stanford Univ., CA (United States). Dept. of Physics

Bismuth, one of the heaviest semimetals in nature, ignited the interest of the materials-physics community for its potential impact on topological quantum-material systems that utilize its strong spin-orbit coupling (SOC) and unique orbital hybridization. In particular, recent theoretical predictions of unique topological and superconducting properties of thin bismuth films and interfaces prompted intense research on the growth of sub- to a few monolayers of bismuth on different substrates. Similar to bulk rhombohedral bismuth, the initial growth of bismuth films on most substrates results in buckled bilayers that either grow in the (111) or (110) directions, with a lattice constant close to that of bulk Bi. By contrast, in this paper we show a new growth pattern for bismuth monolayers on NbSe₂. We find that the initial growth of Bi can form a strongly bonded commensurate layer, resulting in a compressively strained two-dimensional triangular lattice. A unique pattern of 1D ripples and domain walls is observed. The single layer of bismuth also introduces strong marks on the electronic properties at the surface.

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Research Organization:: Princeton Univ., NJ (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1430225

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 4 Vol. 4; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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