Semiconducting cubic titanium nitride in the Th3P4 structure

Bhadram, Venkata S.; Liu, Hanyu; Xu, Enshi; Li, Tianshu; Prakapenka, Vitali B.; Hrubiak, Rostislav; Lany, Stephan; Strobel, Timothy A.

doi:10.1103/PhysRevMaterials.2.011602

Title: Semiconducting cubic titanium nitride in the ${Th}_{3} P_{4}$ structure

Journal Article · Mon Jan 22 04:00:00 UTC 2018 · Physical Review Materials

DOI: https://doi.org/10.1103/PhysRevMaterials.2.011602 · OSTI ID:1429605

Bhadram, Venkata S. ^[1]; Liu, Hanyu ^[1]; Xu, Enshi ^[2]; Li, Tianshu ^[2]; Prakapenka, Vitali B. ^[3]; Hrubiak, Rostislav ^[4]; Lany, Stephan ^[5]; Strobel, Timothy A. ^[1]

Carnegie Inst. of Science, Washington, DC (United States)
George Washington Univ., Washington, DC (United States)
Univ. of Chicago, IL (United States)
Carnegie Inst. of Washington, Argonne, IL (United States). Geophysical Lab., High Pressure Collaborative Access Team (HPCAT)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

We report the discovery of a long-sought-after phase of titanium nitride with stoichiometry Ti3N4 using diamond anvil cell experiments combined with in situ high-resolution x-ray diffraction and Raman spectroscopy techniques, supported by ab initio calculations.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD). Energy Frontier Research in Extreme Environments (EFree); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1429605

Report Number(s):: NREL/JA--5K00-70919

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 1 Vol. 2; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Discovery of Ternary Silicon Titanium Nitride with Spinel-Type Structure Bhat, Shrikant; Lale, Abhijeet; Bernard, Samuel Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-64101-5	journal	April 2020
Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility Guo, Yu; Ma, Liang; Mao, Keke Nanoscale Horizons, Vol. 4, Issue 3 https://doi.org/10.1039/c8nh00273h	journal	January 2019
Ternary nitride semiconductors in the rocksalt crystal structure Bauers, Sage R.; Holder, Aaron; Sun, Wenhao Proceedings of the National Academy of Sciences, Vol. 116, Issue 30 https://doi.org/10.1073/pnas.1904926116	journal	July 2019
New nitrides: from high pressure–high temperature synthesis to layered nanomaterials and energy applications McMillan, Paul F. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 377, Issue 2147 https://doi.org/10.1098/rsta.2018.0244	journal	April 2019
Discovery of Ternary Silicon Titanium Nitride with Spinel-Type Structure Bhat, Shrikant; Lale, Abhijeet; Bernard, Samuel Deutsches Elektronen-Synchrotron, DESY, Hamburg https://doi.org/10.3204/pubdb-2020-01228	text	January 2020

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