Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites

Pan, W.; Lu, P.; Ihlefeld, J. F.; Lee, S. R.; Choi, E. S.; Jiang, Y.; Jia, Q. X.

doi:10.1103/PhysRevMaterials.2.021401

Title: Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned $L a_{2 / 3} S r_{1 / 3} Mn O_{3} : ZnO$ nanopillar composites

Abstract

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La_2/3Sr_1/3MnO₃: ZnO nanocomposites, in which La_2/3Sr_1/3MnO₃ (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( B ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.

Authors:

Pan, W. ^[1]; Lu, P. ^[1]; Ihlefeld, J. F. ^[2]; Lee, S. R. ^[1]; Choi, E. S. ^[3]; Jiang, Y. ^[3]; Jia, Q. X. ^[4]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States). Department of Materials Science and Engineering and Department of Electrical and Computer Engineering
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Univ. at Buffalo, NY (United States). Department of Materials Design and Innovation; Konkuk University, Seoul (South Korea). Dept. of Physics

Publication Date:: Thu Feb 22 00:00:00 EST 2018

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)

OSTI Identifier:: 1426813

Alternate Identifier(s):: OSTI ID: 1422257

Report Number(s):: SAND-2018-1699J
Journal ID: ISSN 2475-9953; PRMHAR; 660705; TRN: US1802576

Grant/Contract Number:: AC04-94AL85000; NA0003525; AC52-06NA25396

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Volume: 2; Journal Issue: 2; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Pan, W., Lu, P., Ihlefeld, J. F., Lee, S. R., Choi, E. S., Jiang, Y., and Jia, Q. X. Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites.  United States: N. p., 2018. 
Web.  doi:10.1103/PhysRevMaterials.2.021401.

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                    Pan, W., Lu, P., Ihlefeld, J. F., Lee, S. R., Choi, E. S., Jiang, Y., & Jia, Q. X. Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites.  United States.  https://doi.org/10.1103/PhysRevMaterials.2.021401

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                    Pan, W., Lu, P., Ihlefeld, J. F., Lee, S. R., Choi, E. S., Jiang, Y., and Jia, Q. X. Thu .  
"Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites".  United States.  https://doi.org/10.1103/PhysRevMaterials.2.021401.  https://www.osti.gov/servlets/purl/1426813.

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@article{osti_1426813,

  title        = {Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites},

  author       = {Pan, W. and Lu, P. and Ihlefeld, J. F. and Lee, S. R. and Choi, E. S. and Jiang, Y. and Jia, Q. X.},

  abstractNote = {Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La2/3Sr1/3MnO3: ZnO nanocomposites, in which La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( B ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.},

  doi          = {10.1103/PhysRevMaterials.2.021401},

  journal      = {Physical Review Materials},

  number       = 2,

  volume       = 2,

  place        = {United States},

  year         = {Thu Feb 22 00:00:00 EST 2018},

  month        = {Thu Feb 22 00:00:00 EST 2018}

}

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https://doi.org/10.1103/PhysRevMaterials.2.021401

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Cited by: 2 works

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Figures / Tables:

Figure 1: Structure characterization of self-assembled vertically aligned LSMO:ZnO nanopillars composites. (a) Schematic diagram of a nanopillars composite sample. (b) High resolution cross-section TEM image. The scale bar is 20 nm. (c) X-ray diffraction (XRD) pattern in the reciprocal lattice. LSMO and LAO peaks are marked.

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Similar Records

Title: Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned L a 2 / 3 S r 1 / 3 Mn O 3 : ZnO nanopillar composites

Abstract

Citation Formats

Figures / Tables:

Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces journal, September 2011

Magnetization vector manipulation by electric fields journal, September 2008

Electric Field Control of the Resistance of Multiferroic Tunnel Junctions with Magnetoelectric Antiferromagnetic Barriers journal, June 2016

Electric Field as a Switching Tool for Magnetic States in Atomic-Scale Nanostructures journal, January 2011

Domain wall resistivity in epitaxial thin film microstructures journal, June 2001

Tunable Low-Field Magnetoresistance in (La0.7Sr0.3MnO3)0.5:(ZnO)0.5 Self-Assembled Vertically Aligned Nanocomposite Thin Films journal, April 2011

Current-induced torques in magnetic materials journal, April 2012

Strain control and spontaneous phase ordering in vertical nanocomposite heteroepitaxial thin films journal, March 2008

Ferromagnetism as a universal feature of nanoparticles of the otherwise nonmagnetic oxides journal, October 2006

Insulator-metal transition and giant magnetoresistance in La 1 − x Sr x MnO 3 journal, May 1995

New frontiers in thin film growth and nanomaterials journal, February 2005

Large-Scale Hexagonal-Patterned Growth of Aligned ZnO Nanorods for Nano-optoelectronics and Nanosensor Arrays journal, March 2004

Magnetoresistive Random Access Memory journal, October 2016

The spin-valve transistor: a review and outlook journal, September 2003

Magnetotransport properties of quasi-one-dimensionally channeled vertically aligned heteroepitaxial nanomazes journal, March 2013

APPLIED PHYSICS: Toward a Universal Memory journal, April 2005

Electric-field-assisted switching in magnetic tunnel junctions journal, November 2011

Spin-Polarized Intergrain Tunneling in La 2 / 3 Sr 1 / 3 MnO 3 journal, September 1996

Room-Temperature Ferromagnetism in Carbon-Doped ZnO journal, September 2007

Title: Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned $L a_{2 / 3} S r_{1 / 3} Mn O_{3} : ZnO$ nanopillar composites

Coexistence of magnetic order and two-dimensional superconductivity at LaAlO₃/SrTiO₃ interfaces
journal, September 2011

Magnetization vector manipulation by electric fields
journal, September 2008

Electric Field Control of the Resistance of Multiferroic Tunnel Junctions with Magnetoelectric Antiferromagnetic Barriers
journal, June 2016

Electric Field as a Switching Tool for Magnetic States in Atomic-Scale Nanostructures
journal, January 2011

Domain wall resistivity in epitaxial thin film microstructures
journal, June 2001

Tunable Low-Field Magnetoresistance in (La0.7Sr0.3MnO3)0.5:(ZnO)0.5 Self-Assembled Vertically Aligned Nanocomposite Thin Films
journal, April 2011

Current-induced torques in magnetic materials
journal, April 2012

Strain control and spontaneous phase ordering in vertical nanocomposite heteroepitaxial thin films
journal, March 2008

Ferromagnetism as a universal feature of nanoparticles of the otherwise nonmagnetic oxides
journal, October 2006

Insulator-metal transition and giant magnetoresistance in ${La}_{1 - x}$ ${Sr}_{x}$ ${MnO}_{3}$
journal, May 1995

New frontiers in thin film growth and nanomaterials
journal, February 2005

Large-Scale Hexagonal-Patterned Growth of Aligned ZnO Nanorods for Nano-optoelectronics and Nanosensor Arrays
journal, March 2004

Magnetoresistive Random Access Memory
journal, October 2016

The spin-valve transistor: a review and outlook
journal, September 2003

Magnetotransport properties of quasi-one-dimensionally channeled vertically aligned heteroepitaxial nanomazes
journal, March 2013

APPLIED PHYSICS: Toward a Universal Memory
journal, April 2005

Electric-field-assisted switching in magnetic tunnel junctions
journal, November 2011

Spin-Polarized Intergrain Tunneling in ${La}_{2 / 3} {Sr}_{1 / 3} {MnO}_{3}$
journal, September 1996

Room-Temperature Ferromagnetism in Carbon-Doped ZnO
journal, September 2007