Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Emmer, Hal; Chen, Christopher T.; Saive, Rebecca; Friedrich, Dennis; Horie, Yu; Arbabi, Amir; Faraon, Andrei; Atwater, Harry A.

doi:10.1038/s41598-017-05012-w

Title: Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Abstract

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF₂ vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10¹⁷ cm^-3 that exhibited mobilities as high as 16 cm²V^-1s^-1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.

Authors:

Emmer, Hal ^[1];

^[1]; Saive, Rebecca ^[1]; Friedrich, Dennis ^[2];

^[1]; Arbabi, Amir ^[1];

^[1]; Atwater, Harry A. ^[1]

California Inst. of Technology (CalTech), Pasadena, CA (United States). Applied Physics and Materials Science
California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis; Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy and Inst. for Solar Fuels

Publication Date:: Wed Jul 05 00:00:00 EDT 2017

Research Org.:: Arizona State Univ., Tempe, AZ (United States); California Institute of Technology (CalTech), Pasadena, CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1425153

Grant/Contract Number:: EE0006335; AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Metamaterials; Nanophotonics and plasmonics; Nonlinear optics

Citation Formats


                    Emmer, Hal, Chen, Christopher T., Saive, Rebecca, Friedrich, Dennis, Horie, Yu, Arbabi, Amir, Faraon, Andrei, and Atwater, Harry A. Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass.  United States: N. p., 2017. 
Web.  doi:10.1038/s41598-017-05012-w.

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                    Emmer, Hal, Chen, Christopher T., Saive, Rebecca, Friedrich, Dennis, Horie, Yu, Arbabi, Amir, Faraon, Andrei, & Atwater, Harry A. Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass.  United States.  https://doi.org/10.1038/s41598-017-05012-w

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                    Emmer, Hal, Chen, Christopher T., Saive, Rebecca, Friedrich, Dennis, Horie, Yu, Arbabi, Amir, Faraon, Andrei, and Atwater, Harry A. Wed .  
"Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass".  United States.  https://doi.org/10.1038/s41598-017-05012-w.  https://www.osti.gov/servlets/purl/1425153.

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@article{osti_1425153,

  title        = {Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass},

  author       = {Emmer, Hal and Chen, Christopher T. and Saive, Rebecca and Friedrich, Dennis and Horie, Yu and Arbabi, Amir and Faraon, Andrei and Atwater, Harry A.},

  abstractNote = {Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 1017 cm-3 that exhibited mobilities as high as 16 cm2V-1s-1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.},

  doi          = {10.1038/s41598-017-05012-w},

  journal      = {Scientific Reports},

  number       = 1,

  volume       = 7,

  place        = {United States},

  year         = {Wed Jul 05 00:00:00 EDT 2017},

  month        = {Wed Jul 05 00:00:00 EDT 2017}

}

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Works referenced in this record:

Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV
journal, August 1967

Dean, P. J.; Kaminsky, G.; Zetterstrom, R. B.
Journal of Applied Physics, Vol. 38, Issue 9
DOI: 10.1063/1.1710170

Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV
journal, August 1967

Dean, P. J.; Kaminsky, G.; Zetterstrom, R. B.
Journal of Applied Physics, Vol. 38, Issue 9
DOI: 10.1063/1.1710170

Guiding and confining light in void nanostructure
journal, January 2004

Almeida, Vilson R.; Xu, Qianfan; Barrios, Carlos A.
Optics Letters, Vol. 29, Issue 11
DOI: 10.1364/ol.29.001209

Flat dielectric grating reflectors with focusing abilities
journal, May 2010

Fattal, David; Li, Jingjing; Peng, Zhen
Nature Photonics, Vol. 4, Issue 7, p. 466-470
DOI: 10.1038/nphoton.2010.116

Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications
journal, February 2010

Kelzenberg, Michael D.; Boettcher, Shannon W.; Petykiewicz, Jan A.
Nature Materials, Vol. 9, Issue 4, p. 368-368
DOI: 10.1038/nmat2727

Solar cells with gallium phosphide/silicon heterojunction
conference, January 2015

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric
11TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS: CPV-11, AIP Conference Proceedings
DOI: 10.1063/1.4931514

Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications
journal, February 2010

Kelzenberg, Michael D.; Boettcher, Shannon W.; Petykiewicz, Jan A.
Nature Materials, Vol. 9, Issue 4, p. 368-368
DOI: 10.1038/nmat2727

Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
journal, April 2013

Grassman, T. J.; Carlin, J. A.; Galiana, B.
Applied Physics Letters, Vol. 102, Issue 14
DOI: 10.1063/1.4801498

Dielectric metasurfaces for complete control of phase and polarization with subwavelength spatial resolution and high transmission
journal, August 2015

Arbabi, Amir; Horie, Yu; Bagheri, Mahmood
Nature Nanotechnology, Vol. 10, Issue 11, p. 937-943
DOI: 10.1038/nnano.2015.186

Contact resistances of AuGeNi, AuZn and Al to III–V compounds
journal, November 1972

Shih, K. K.; Blum, J. M.
Solid-State Electronics, Vol. 15, Issue 11
DOI: 10.1016/0038-1101(72)90037-8

Sub-wavelength GaN-based membrane high contrast grating reflectors
journal, January 2012

Wu, Tzeng Tsong; Syu, Yu Cheng; Wu, Shu Hsien
Optics Express, Vol. 20, Issue 18
DOI: 10.1364/oe.20.020551

Dielectric Metasurfaces for Complete Control of Phase and Polarization with Subwavelength Spatial Resolution and High Transmission
text, January 2014

Arbabi, Amir; Horie, Yu; Bagheri, Mahmood
arXiv
DOI: 10.48550/arxiv.1411.1494

Chemical etching of (100) GaAs in a sulphuric acid-hydrogen peroxide-water system
journal, April 1987

Barycka, Irena; Zubel, Irena
Journal of Materials Science, Vol. 22, Issue 4
DOI: 10.1007/bf01233125

Optical properties and electronic structure of amorphous Ge and Si
journal, January 1968

Tauc, J.
Materials Research Bulletin, Vol. 3, Issue 1
DOI: 10.1016/0025-5408(68)90023-8

Nanophotonics: Shrinking light-based technology
journal, April 2015

Koenderink, A. F.; Alu, A.; Polman, A.
Science, Vol. 348, Issue 6234
DOI: 10.1126/science.1261243

Extreme selectivity in the lift‐off of epitaxial GaAs films
journal, December 1987

Yablonovitch, Eli; Gmitter, T.; Harbison, J. P.
Applied Physics Letters, Vol. 51, Issue 26, p. 2222-2224
DOI: 10.1063/1.98946

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon
journal, May 2016

Beyer, Andreas; Stegmüller, Andreas; Oelerich, Jan O.
Chemistry of Materials, Vol. 28, Issue 10
DOI: 10.1021/acs.chemmater.5b04896

Flat Dielectric Grating Reflectors with High Focusing Power
text, January 2010

Fattal, David; Li, Jingjing; Peng, Zhen
arXiv
DOI: 10.48550/arxiv.1001.3711

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
journal, January 1983

Aspnes, D. E.; Studna, A. A.
Physical Review B, Vol. 27, Issue 2
DOI: 10.1103/PhysRevB.27.985

Subwavelength-thick lenses with high numerical apertures and large efficiency based on high-contrast transmitarrays
journal, May 2015

Arbabi, Amir; Horie, Yu; Ball, Alexander J.
Nature Communications, Vol. 6, Article No. 7069
DOI: 10.1038/ncomms8069

Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power
text, January 2009

Rivoire, Kelley; Lin, Ziliang; Hatami, Fariba
arXiv
DOI: 10.48550/arxiv.0910.4757

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon
journal, May 2016

Beyer, Andreas; Stegmüller, Andreas; Oelerich, Jan O.
Chemistry of Materials, Vol. 28, Issue 10
DOI: 10.1021/acs.chemmater.5b04896

Large Area Silicon Nanomembrane Photonic Devices on Unconventional Substrates
journal, August 2013

Xu, Xiaochuan; Subbaraman, Harish; Kwong, David
IEEE Photonics Technology Letters, Vol. 25, Issue 16
DOI: 10.1109/LPT.2013.2272678

Coherent terabit communications with microresonator Kerr frequency combs
journal, April 2014

Pfeifle, Joerg; Brasch, Victor; Lauermann, Matthias
Nature Photonics, Vol. 8, Issue 5
DOI: 10.1038/nphoton.2014.57

Epitaxial lift-off and its applications
journal, June 1993

Demeester, P.; Pollentier, I.; Dobbelaere, P. De
Semiconductor Science and Technology, Vol. 8, Issue 6
DOI: 10.1088/0268-1242/8/6/021

Coherent terabit communications with microresonator Kerr frequency combs
journal, April 2014

Pfeifle, Joerg; Brasch, Victor; Lauermann, Matthias
Nature Photonics, Vol. 8, Issue 5
DOI: 10.1038/nphoton.2014.57

Epitaxial lift-off and its applications
journal, June 1993

Demeester, P.; Pollentier, I.; Dobbelaere, P. De
Semiconductor Science and Technology, Vol. 8, Issue 6
DOI: 10.1088/0268-1242/8/6/021

Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power
journal, January 2009

Rivoire, Kelley; Lin, Ziliang; Hatami, Fariba
Optics Express, Vol. 17, Issue 25
DOI: 10.1364/OE.17.022609

Extreme selectivity in the lift‐off of epitaxial GaAs films
journal, December 1987

Yablonovitch, Eli; Gmitter, T.; Harbison, J. P.
Applied Physics Letters, Vol. 51, Issue 26, p. 2222-2224
DOI: 10.1063/1.98946

Optimum Mg Doping Conditions of GaP Window Layer in 600 nm Multi-Quantum Well AlGaInP Light Emitting Diode
journal, January 2013

Lee, Hyung Joo; Kim, Jae Hoon; Lee, Choong Hun
ECS Journal of Solid State Science and Technology, Vol. 2, Issue 6
DOI: 10.1149/2.008306jss

Gallium phosphide photonic crystal nanocavities in the visible
conference, November 2008

Rivoire, Kelley; Faraon, Andrei; Vuckovic, Jelena
LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008)
DOI: 10.1109/LEOS.2008.4688809

Antiphase domain tailoring for combination of modal and 4¯ -quasi-phase matching in gallium phosphide microdisks
journal, January 2016

Guillemé, P.; Vallet, M.; Stodolna, J.
Optics Express, Vol. 24, Issue 13
DOI: 10.1364/oe.24.014608

Nanophotonics: Shrinking light-based technology
journal, April 2015

Koenderink, A. F.; Alu, A.; Polman, A.
Science, Vol. 348, Issue 6234
DOI: 10.1126/science.1261243

Absolute scale of second-order nonlinear-optical coefficients
journal, January 1997

Shoji, Ichiro; Kondo, Takashi; Kitamoto, Ayako
Journal of the Optical Society of America B, Vol. 14, Issue 9
DOI: 10.1364/JOSAB.14.002268

Intrinsic Absorption-Edge Spectrum of Gallium Phosphide
journal, October 1966

Dean, P. J.; Thomas, D. G.
Physical Review, Vol. 150, Issue 2
DOI: 10.1103/PhysRev.150.690

Optical properties and electronic structure of amorphous Ge and Si
journal, January 1968

Tauc, J.
Materials Research Bulletin, Vol. 3, Issue 1
DOI: 10.1016/0025-5408(68)90023-8

Contact resistances of AuGeNi, AuZn and Al to III–V compounds
journal, November 1972

Shih, K. K.; Blum, J. M.
Solid-State Electronics, Vol. 15, Issue 11
DOI: 10.1016/0038-1101(72)90037-8

Gallium phosphide photonic crystal nanocavities in the visible
journal, August 2008

Rivoire, Kelley; Faraon, Andrei; Vuckovic, Jelena
Applied Physics Letters, Vol. 93, Issue 6
DOI: 10.1063/1.2971200

Works referencing / citing this record:

Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides
journal, February 2019

Chen, Christopher T.; Pedrini, Jacopo; Gaulding, E. Ashley
Scientific Reports, Vol. 9, Issue 1
DOI: 10.1038/s41598-019-39115-3

Heteroepitaxy of GaP on silicon for efficient and cost-effective photoelectrochemical water splitting
journal, January 2019

Alqahtani, Mahdi; Sathasivam, Sanjayan; Cui, Fan
Journal of Materials Chemistry A, Vol. 7, Issue 14
DOI: 10.1039/c9ta01328h

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Title: Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Abstract

Citation Formats

Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV journal, August 1967

Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV journal, August 1967

Guiding and confining light in void nanostructure journal, January 2004

Flat dielectric grating reflectors with focusing abilities journal, May 2010

Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications journal, February 2010

Solar cells with gallium phosphide/silicon heterojunction conference, January 2015

Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications journal, February 2010

Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition journal, April 2013

Dielectric metasurfaces for complete control of phase and polarization with subwavelength spatial resolution and high transmission journal, August 2015

Contact resistances of AuGeNi, AuZn and Al to III–V compounds journal, November 1972

Sub-wavelength GaN-based membrane high contrast grating reflectors journal, January 2012

Dielectric Metasurfaces for Complete Control of Phase and Polarization with Subwavelength Spatial Resolution and High Transmission text, January 2014

Chemical etching of (100) GaAs in a sulphuric acid-hydrogen peroxide-water system journal, April 1987

Optical properties and electronic structure of amorphous Ge and Si journal, January 1968

Nanophotonics: Shrinking light-based technology journal, April 2015

Extreme selectivity in the lift‐off of epitaxial GaAs films journal, December 1987

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon journal, May 2016

Flat Dielectric Grating Reflectors with High Focusing Power text, January 2010

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV journal, January 1983

Subwavelength-thick lenses with high numerical apertures and large efficiency based on high-contrast transmitarrays journal, May 2015

Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power text, January 2009

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon journal, May 2016

Large Area Silicon Nanomembrane Photonic Devices on Unconventional Substrates journal, August 2013

Coherent terabit communications with microresonator Kerr frequency combs journal, April 2014

Epitaxial lift-off and its applications journal, June 1993

Coherent terabit communications with microresonator Kerr frequency combs journal, April 2014

Epitaxial lift-off and its applications journal, June 1993

Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power journal, January 2009

Extreme selectivity in the lift‐off of epitaxial GaAs films journal, December 1987

Optimum Mg Doping Conditions of GaP Window Layer in 600 nm Multi-Quantum Well AlGaInP Light Emitting Diode journal, January 2013

Gallium phosphide photonic crystal nanocavities in the visible conference, November 2008

Antiphase domain tailoring for combination of modal and 4¯ -quasi-phase matching in gallium phosphide microdisks journal, January 2016

Nanophotonics: Shrinking light-based technology journal, April 2015

Absolute scale of second-order nonlinear-optical coefficients journal, January 1997

Intrinsic Absorption-Edge Spectrum of Gallium Phosphide journal, October 1966

Optical properties and electronic structure of amorphous Ge and Si journal, January 1968

Contact resistances of AuGeNi, AuZn and Al to III–V compounds journal, November 1972

Gallium phosphide photonic crystal nanocavities in the visible journal, August 2008

Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides journal, February 2019

Heteroepitaxy of GaP on silicon for efficient and cost-effective photoelectrochemical water splitting journal, January 2019

Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV
journal, August 1967

Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV
journal, August 1967

Guiding and confining light in void nanostructure
journal, January 2004

Flat dielectric grating reflectors with focusing abilities
journal, May 2010

Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications
journal, February 2010

Solar cells with gallium phosphide/silicon heterojunction
conference, January 2015

Erratum: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications
journal, February 2010

Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
journal, April 2013

Dielectric metasurfaces for complete control of phase and polarization with subwavelength spatial resolution and high transmission
journal, August 2015

Contact resistances of AuGeNi, AuZn and Al to III–V compounds
journal, November 1972

Sub-wavelength GaN-based membrane high contrast grating reflectors
journal, January 2012

Dielectric Metasurfaces for Complete Control of Phase and Polarization with Subwavelength Spatial Resolution and High Transmission
text, January 2014

Chemical etching of (100) GaAs in a sulphuric acid-hydrogen peroxide-water system
journal, April 1987

Optical properties and electronic structure of amorphous Ge and Si
journal, January 1968

Nanophotonics: Shrinking light-based technology
journal, April 2015

Extreme selectivity in the lift‐off of epitaxial GaAs films
journal, December 1987

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon
journal, May 2016

Flat Dielectric Grating Reflectors with High Focusing Power
text, January 2010

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
journal, January 1983

Subwavelength-thick lenses with high numerical apertures and large efficiency based on high-contrast transmitarrays
journal, May 2015

Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power
text, January 2009

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon
journal, May 2016

Large Area Silicon Nanomembrane Photonic Devices on Unconventional Substrates
journal, August 2013

Coherent terabit communications with microresonator Kerr frequency combs
journal, April 2014

Epitaxial lift-off and its applications
journal, June 1993

Coherent terabit communications with microresonator Kerr frequency combs
journal, April 2014

Epitaxial lift-off and its applications
journal, June 1993

Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power
journal, January 2009

Extreme selectivity in the lift‐off of epitaxial GaAs films
journal, December 1987

Optimum Mg Doping Conditions of GaP Window Layer in 600 nm Multi-Quantum Well AlGaInP Light Emitting Diode
journal, January 2013

Gallium phosphide photonic crystal nanocavities in the visible
conference, November 2008

Antiphase domain tailoring for combination of modal and 4¯ -quasi-phase matching in gallium phosphide microdisks
journal, January 2016

Nanophotonics: Shrinking light-based technology
journal, April 2015

Absolute scale of second-order nonlinear-optical coefficients
journal, January 1997

Intrinsic Absorption-Edge Spectrum of Gallium Phosphide
journal, October 1966

Optical properties and electronic structure of amorphous Ge and Si
journal, January 1968

Contact resistances of AuGeNi, AuZn and Al to III–V compounds
journal, November 1972

Gallium phosphide photonic crystal nanocavities in the visible
journal, August 2008

Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides
journal, February 2019

Heteroepitaxy of GaP on silicon for efficient and cost-effective photoelectrochemical water splitting
journal, January 2019