Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC

Frye, C. D.; Saw, C. K.; Padavala, Balabalaji; Khan, Neelam; Nikolic, R. J.; Edgar, J. H.

doi:10.1021/acs.cgd.7b00867

Title: Suppression of Rotational Twins in Epitaxial B₁₂P₂ on 4H-SiC

Abstract

B₁₂P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$$11\bar{20}$$] and a custom miscut 4° toward the [$$1\bar{10}0$$]. Epitaxy on substrates miscut to the [$$11\bar{20}$$] resulted in highly twinned B₁₂P₂ films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$$1\bar{10}0$$] produced films of >99% twin orientation I. A H₂ etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B₁₂P₂ twin orientations. Surface steps on substrates miscut to the [$$11\bar{20}$$] tend to be zig-zagged with steps rotated 60° from one another producing B₁₂P₂ crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$$1\bar{10}0$$] tend to be parallel resulting in crystallographically aligned B₁₂P₂ nucleation.

Authors:

^[1]; Saw, C. K. ^[2]; Padavala, Balabalaji ^[3]; Khan, Neelam ^[4]; Nikolic, R. J. ^[2]; Edgar, J. H. ^[3]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Center for Micro and Nano-Technologies; Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Center for Micro and Nano-Technologies
Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
Georgia Gwinnett College, Lawrenceville, GA (United States). School of Science and Technology

Publication Date:: 2017-12-22

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1424076

Report Number(s):: LLNL-JRNL-731996
Journal ID: ISSN 1528-7483

Grant/Contract Number:: AC52-07NA27344

Resource Type:: Accepted Manuscript

Journal Name:: Crystal Growth and Design

Additional Journal Information:: Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1528-7483

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 42 ENGINEERING

Citation Formats


                    Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., and Edgar, J. H.. Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC.  United States: N. p., 2017. 
Web.  doi:10.1021/acs.cgd.7b00867.

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                    Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., & Edgar, J. H.. Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC.  United States.  https://doi.org/10.1021/acs.cgd.7b00867

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                    Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., and Edgar, J. H.. Fri .  
"Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC".  United States.  https://doi.org/10.1021/acs.cgd.7b00867.  https://www.osti.gov/servlets/purl/1424076.

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@article{osti_1424076,

  title        = {Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC},

  author       = {Frye, C. D. and Saw, C. K. and Padavala, Balabalaji and Khan, Neelam and Nikolic, R. J. and Edgar, J. H.},

  abstractNote = {B12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$11\bar{20}$] and a custom miscut 4° toward the [$1\bar{10}0$]. Epitaxy on substrates miscut to the [$11\bar{20}$] resulted in highly twinned B12P2 films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$1\bar{10}0$] produced films of >99% twin orientation I. A H2 etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B12P2 twin orientations. Surface steps on substrates miscut to the [$11\bar{20}$] tend to be zig-zagged with steps rotated 60° from one another producing B12P2 crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$1\bar{10}0$] tend to be parallel resulting in crystallographically aligned B12P2 nucleation.},

  doi          = {10.1021/acs.cgd.7b00867},

  journal      = {Crystal Growth and Design},

  number       = 2,

  volume       = 18,

  place        = {United States},

  year         = {2017},

  month        = {12}

}

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Similar Records

Title: Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC

Abstract

Citation Formats

Melt growth and properties of B6P crystals journal, January 1983

Defect clustering and self-healing of electron-irradiated boron-rich solids journal, May 1995

Absence of defect clusters in electron irradiated boron carbide journal, January 1985

Unusual properties of icosahedral boron-rich solids journal, September 2006

Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH 3 -B 2 H 6 -H 2 System journal, October 1973

Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 system journal, October 1974

Chemical vapour deposition of boron phosphides using bromide reactants journal, June 1985

Epitaxial Growth of Rhombohedral Boron Phosphide Single Crystalline Films by Chemical Vapor Deposition journal, October 1997

Growth of Rhombohedral B 12 P 2 Thin Films on 6H-SiC(0001) By Chemical Vapor Deposition journal, January 2003

Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC journal, February 2017

Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth journal, October 2016

Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate journal, October 2013

Interface engineering for improved growth of GaSb on Si(111) journal, May 2011

Defect structures in B12As2 epitaxial layers grown on (0001) 6H-SiC journal, June 2008

Crystal growth of B12As2 on SiC substrate by CVD method journal, January 2005

Growth mechanisms and defect structures of B12As2 epilayers grown on 4H-SiC substrates journal, August 2012

Double-positioning twinning in icosahedral B12As2 thin films grown by chemical vapor deposition journal, March 2004

Structural Variants in Attempted Heteroepitaxial Growth of B 12 As 2 on 6H–SiC (0001) journal, November 2005

Graphene formation mechanisms on 4 H -SiC ( 0001 ) journal, September 2009

Mechanism for Improved Quality B 12 As 2 Epitaxial Films on (0001) 4H-SiC Substrates by Tilting toward [1-100] Direction journal, January 2010

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide journal, September 2015

An atomistic mechanism for the production of two- and three-dimensional etch hillocks on Si(111) surfaces journal, October 1999

Elimination of Degenerate Epitaxy in the Growth of High Quality B 12 As 2 Single Crystalline Epitaxial Films journal, January 2011

Title: Suppression of Rotational Twins in Epitaxial B₁₂P₂ on 4H-SiC

Melt growth and properties of B6P crystals
journal, January 1983

Defect clustering and self-healing of electron-irradiated boron-rich solids
journal, May 1995

Absence of defect clusters in electron irradiated boron carbide
journal, January 1985

Unusual properties of icosahedral boron-rich solids
journal, September 2006

Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH ₃ -B ₂ H ₆ -H ₂ System
journal, October 1973

Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 system
journal, October 1974

Chemical vapour deposition of boron phosphides using bromide reactants
journal, June 1985

Epitaxial Growth of Rhombohedral Boron Phosphide Single Crystalline Films by Chemical Vapor Deposition
journal, October 1997

Growth of Rhombohedral B ₁₂ P ₂ Thin Films on 6H-SiC(0001) By Chemical Vapor Deposition
journal, January 2003

Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC
journal, February 2017

Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth
journal, October 2016

Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate
journal, October 2013

Interface engineering for improved growth of GaSb on Si(111)
journal, May 2011

Defect structures in B12As2 epitaxial layers grown on (0001) 6H-SiC
journal, June 2008

Crystal growth of B12As2 on SiC substrate by CVD method
journal, January 2005

Growth mechanisms and defect structures of B12As2 epilayers grown on 4H-SiC substrates
journal, August 2012

Double-positioning twinning in icosahedral B12As2 thin films grown by chemical vapor deposition
journal, March 2004

Structural Variants in Attempted Heteroepitaxial Growth of B ₁₂ As ₂ on 6H–SiC (0001)
journal, November 2005

Graphene formation mechanisms on $4 H -SiC (0001)$
journal, September 2009

Mechanism for Improved Quality B ₁₂ As ₂ Epitaxial Films on (0001) 4H-SiC Substrates by Tilting toward [1-100] Direction
journal, January 2010

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide
journal, September 2015

An atomistic mechanism for the production of two- and three-dimensional etch hillocks on Si(111) surfaces
journal, October 1999

Elimination of Degenerate Epitaxy in the Growth of High Quality B ₁₂ As ₂ Single Crystalline Epitaxial Films
journal, January 2011