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Title: Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC

Abstract

B12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$$11\bar{20}$$] and a custom miscut 4° toward the [$$1\bar{10}0$$]. Epitaxy on substrates miscut to the [$$11\bar{20}$$] resulted in highly twinned B12P2 films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$$1\bar{10}0$$] produced films of >99% twin orientation I. A H2 etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B12P2 twin orientations. Surface steps on substrates miscut to the [$$11\bar{20}$$] tend to be zig-zagged with steps rotated 60° from one another producing B12P2 crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$$1\bar{10}0$$] tend to be parallel resulting in crystallographically aligned B12P2 nucleation.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [2];  [3]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Center for Micro and Nano-Technologies; Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Center for Micro and Nano-Technologies
  3. Kansas State Univ., Manhattan, KS (United States). Dept. of Chemical Engineering
  4. Georgia Gwinnett College, Lawrenceville, GA (United States). School of Science and Technology
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1424076
Report Number(s):
LLNL-JRNL-731996
Journal ID: ISSN 1528-7483
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Crystal Growth and Design
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1528-7483
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 42 ENGINEERING

Citation Formats

Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., and Edgar, J. H.. Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC. United States: N. p., 2017. Web. https://doi.org/10.1021/acs.cgd.7b00867.
Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., & Edgar, J. H.. Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC. United States. https://doi.org/10.1021/acs.cgd.7b00867
Frye, C. D., Saw, C. K., Padavala, Balabalaji, Khan, Neelam, Nikolic, R. J., and Edgar, J. H.. Fri . "Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC". United States. https://doi.org/10.1021/acs.cgd.7b00867. https://www.osti.gov/servlets/purl/1424076.
@article{osti_1424076,
title = {Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC},
author = {Frye, C. D. and Saw, C. K. and Padavala, Balabalaji and Khan, Neelam and Nikolic, R. J. and Edgar, J. H.},
abstractNote = {B12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$11\bar{20}$] and a custom miscut 4° toward the [$1\bar{10}0$]. Epitaxy on substrates miscut to the [$11\bar{20}$] resulted in highly twinned B12P2 films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [$1\bar{10}0$] produced films of >99% twin orientation I. A H2 etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B12P2 twin orientations. Surface steps on substrates miscut to the [$11\bar{20}$] tend to be zig-zagged with steps rotated 60° from one another producing B12P2 crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. In conclusion, steps on substrates tilted to the [$1\bar{10}0$] tend to be parallel resulting in crystallographically aligned B12P2 nucleation.},
doi = {10.1021/acs.cgd.7b00867},
journal = {Crystal Growth and Design},
number = 2,
volume = 18,
place = {United States},
year = {2017},
month = {12}
}

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Works referenced in this record:

Melt growth and properties of B6P crystals
journal, January 1983

  • Slack, Glen A.; McNelly, T. F.; Taft, E. A.
  • Journal of Physics and Chemistry of Solids, Vol. 44, Issue 10
  • DOI: 10.1016/0022-3697(83)90151-8

Defect clustering and self-healing of electron-irradiated boron-rich solids
journal, May 1995


Absence of defect clusters in electron irradiated boron carbide
journal, January 1985


Unusual properties of icosahedral boron-rich solids
journal, September 2006


Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH 3 -B 2 H 6 -H 2 System
journal, October 1973

  • Takigawa, Mitsuharu; Hirayama, Makoto; Shohno, Katsufusa
  • Japanese Journal of Applied Physics, Vol. 12, Issue 10
  • DOI: 10.1143/JJAP.12.1504

Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 system
journal, October 1974


Chemical vapour deposition of boron phosphides using bromide reactants
journal, June 1985


Epitaxial Growth of Rhombohedral Boron Phosphide Single Crystalline Films by Chemical Vapor Deposition
journal, October 1997

  • Kumashiro, Y.; Yoshizawa, H.; Yokoyama, T.
  • Journal of Solid State Chemistry, Vol. 133, Issue 1
  • DOI: 10.1006/jssc.1997.7324

Growth of Rhombohedral B 12 P 2 Thin Films on 6H-SiC(0001) By Chemical Vapor Deposition
journal, January 2003


Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC
journal, February 2017


Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth
journal, October 2016

  • Koppka, Christian; Paszuk, Agnieszka; Steidl, Matthias
  • Crystal Growth & Design, Vol. 16, Issue 11
  • DOI: 10.1021/acs.cgd.6b00541

Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate
journal, October 2013


Interface engineering for improved growth of GaSb on Si(111)
journal, May 2011


Growth mechanisms and defect structures of B12As2 epilayers grown on 4H-SiC substrates
journal, August 2012


Double-positioning twinning in icosahedral B12As2 thin films grown by chemical vapor deposition
journal, March 2004


Structural Variants in Attempted Heteroepitaxial Growth of B 12 As 2 on 6H–SiC (0001)
journal, November 2005

  • Michael, J. R.; Aselage, T. L.; Emin, David
  • Journal of Materials Research, Vol. 20, Issue 11
  • DOI: 10.1557/JMR.2005.0367

Graphene formation mechanisms on 4 H -SiC ( 0001 )
journal, September 2009


Mechanism for Improved Quality B 12 As 2 Epitaxial Films on (0001) 4H-SiC Substrates by Tilting toward [1-100] Direction
journal, January 2010


Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide
journal, September 2015


An atomistic mechanism for the production of two- and three-dimensional etch hillocks on Si(111) surfaces
journal, October 1999

  • Flidr, Jaroslav; Huang, Yi-Chiau; Hines, Melissa A.
  • The Journal of Chemical Physics, Vol. 111, Issue 15
  • DOI: 10.1063/1.479990

Elimination of Degenerate Epitaxy in the Growth of High Quality B 12 As 2 Single Crystalline Epitaxial Films
journal, January 2011