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This content will become publicly available on January 30, 2019

Title: Growth of amorphous and epitaxial ZnSiP 2–Si alloys on Si

ZnSiP 2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP 2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.
Authors:
ORCiD logo [1] ; ORCiD logo [2] ;  [2] ;  [1] ;  [2] ;  [2] ;  [1] ; ORCiD logo [1] ; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5J00-70613
Journal ID: ISSN 2050-7526; JMCCCX; TRN: US1801717
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Journal of Materials Chemistry C
Additional Journal Information:
Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; band gap materials; optoelectronic materials and devices; multijunction photovoltaics; chemical vapor deposition; thin films
OSTI Identifier:
1423187