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Title: Growth of amorphous and epitaxial ZnSiP 2–Si alloys on Si

Abstract

ZnSiP 2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP 2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [2];  [1];  [2];  [2];  [1]; ORCiD logo [1]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1423187
Report Number(s):
NREL/JA-5J00-70613
Journal ID: ISSN 2050-7526; JMCCCX; TRN: US1801717
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Chemistry C
Additional Journal Information:
Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; band gap materials; optoelectronic materials and devices; multijunction photovoltaics; chemical vapor deposition; thin films

Citation Formats

Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., and Tamboli, Adele C. Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si. United States: N. p., 2018. Web. doi:10.1039/C7TC05545E.
Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., & Tamboli, Adele C. Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si. United States. doi:10.1039/C7TC05545E.
Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., and Tamboli, Adele C. Tue . "Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si". United States. doi:10.1039/C7TC05545E. https://www.osti.gov/servlets/purl/1423187.
@article{osti_1423187,
title = {Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si},
author = {Martinez, Aaron D. and Miller, Elisa M. and Norman, Andrew G. and Schnepf, Rekha R. and Leick, Noemi and Perkins, Craig and Stradins, Paul and Toberer, Eric S. and Tamboli, Adele C.},
abstractNote = {ZnSiP2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.},
doi = {10.1039/C7TC05545E},
journal = {Journal of Materials Chemistry C},
number = 11,
volume = 6,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 4 works
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Figures / Tables:

Figure 1 Figure 1: The growth technique employed here uses a combination of hot wire chemical vapor deposition and an effusion cell for metallic Zn. In this study, the substrates were not intentionally heated, but the hot wires result in heating to 100–200 °C.

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Works referenced in this record:

Kramers–Kronig constrained variational analysis of optical spectra
journal, August 2005

  • Kuzmenko, A. B.
  • Review of Scientific Instruments, Vol. 76, Issue 8
  • DOI: 10.1063/1.1979470

Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH 3 surface preparation
journal, August 2015

  • Warren, Emily L.; Kibbler, Alan E.; France, Ryan M.
  • Applied Physics Letters, Vol. 107, Issue 8
  • DOI: 10.1063/1.4929714

Development of ZnSiP$_{\mathbf 2}$ for Si-Based Tandem Solar Cells
journal, January 2015

  • Martinez, Aaron D.; Ortiz, Brenden R.; Johnson, Nicole E.
  • IEEE Journal of Photovoltaics, Vol. 5, Issue 1
  • DOI: 10.1109/JPHOTOV.2014.2362305

Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate
journal, March 2010

  • Martin, Ina T.; Teplin, Charles W.; Doyle, James R.
  • Journal of Applied Physics, Vol. 107, Issue 5
  • DOI: 10.1063/1.3298455

Optical, electrical, and photoelectrical properties of sputtered thin amorphous Zn 3 P 2 films
journal, June 1994

  • Weber, A.; Sutter, P.; von Känel, H.
  • Journal of Applied Physics, Vol. 75, Issue 11
  • DOI: 10.1063/1.356613

The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane
journal, September 2001


Surfactant-assisted growth of CdS thin films for photovoltaic applications
journal, May 2006

  • Perkins, Craig L.; Hasoon, Falah S.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, Issue 3
  • DOI: 10.1116/1.2194929

Parameterization of the dielectric function of semiconductor nanocrystals
journal, November 2014


In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
journal, February 2016


Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
journal, April 2013

  • Grassman, T. J.; Carlin, J. A.; Galiana, B.
  • Applied Physics Letters, Vol. 102, Issue 14
  • DOI: 10.1063/1.4801498

Metamorphic epitaxy for multijunction solar cells
journal, March 2016

  • France, Ryan M.; Dimroth, Frank; Grassman, Tyler J.
  • MRS Bulletin, Vol. 41, Issue 3
  • DOI: 10.1557/mrs.2016.25

The preparation and growth of polycrystalline layers of ZnSiP2 in an open flow system
journal, February 1970


Dielectric function representation by B-splines
journal, April 2008


Characterization of vacuum grown thin films of ZnSnP2
journal, May 1987


Solar energy conversion properties and defect physics of ZnSiP 2
journal, January 2016

  • Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun
  • Energy & Environmental Science, Vol. 9, Issue 3
  • DOI: 10.1039/C5EE02884A

Epitaxial growth of solid solutions of ZnSiP2 in Si
journal, July 1972


Polar-on-nonpolar epitaxy
journal, February 1987


Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases
journal, July 2017


Synthesis, structure, and optoelectronic properties of II–IV–V 2 materials
journal, January 2017

  • Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.
  • Journal of Materials Chemistry A, Vol. 5, Issue 23
  • DOI: 10.1039/C7TA00406K

Optical Spectra and Energy Band Structure of the Monoclinic Crystals ZnP2 and ZnAs2
journal, June 1972