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Title: Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1423172
Grant/Contract Number:  
DEFG02-03ER46028; SC0008712
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Name: Physical Review Applied Journal Volume: 9 Journal Issue: 2; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Peng, Weina, Zamiri, Marziyeh, Scott, Shelley A., Cavallo, Francesca, Endres, James J., Knezevic, Irena, Eriksson, Mark A., and Lagally, Max G. Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes. United States: N. p., 2018. Web. doi:10.1103/PhysRevApplied.9.024037.
Peng, Weina, Zamiri, Marziyeh, Scott, Shelley A., Cavallo, Francesca, Endres, James J., Knezevic, Irena, Eriksson, Mark A., & Lagally, Max G. Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes. United States. doi:10.1103/PhysRevApplied.9.024037.
Peng, Weina, Zamiri, Marziyeh, Scott, Shelley A., Cavallo, Francesca, Endres, James J., Knezevic, Irena, Eriksson, Mark A., and Lagally, Max G. Wed . "Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes". United States. doi:10.1103/PhysRevApplied.9.024037.
@article{osti_1423172,
title = {Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes},
author = {Peng, Weina and Zamiri, Marziyeh and Scott, Shelley A. and Cavallo, Francesca and Endres, James J. and Knezevic, Irena and Eriksson, Mark A. and Lagally, Max G.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.9.024037},
journal = {Physical Review Applied},
number = 2,
volume = 9,
place = {United States},
year = {2018},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevApplied.9.024037

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Works referenced in this record:

Alkyl monolayers covalently bonded to silicon surfaces
journal, December 1993

  • Linford, Matthew R.; Chidsey, Christopher E. D.
  • Journal of the American Chemical Society, Vol. 115, Issue 26
  • DOI: 10.1021/ja00079a071

Self-Wound Composite Nanomembranes as Electrode Materials for Lithium Ion Batteries
journal, September 2010

  • Ji, Heng-Xing; Wu, Xing-Long; Fan, Li-Zhen
  • Advanced Materials, Vol. 22, Issue 41
  • DOI: 10.1002/adma.201001422

Self-Assembled Ultra-Compact Energy Storage Elements Based on Hybrid Nanomembranes
journal, July 2010

  • Bof Bufon, Carlos César; Cojal González, José David; Thurmer, Dominic J.
  • Nano Letters, Vol. 10, Issue 7
  • DOI: 10.1021/nl1010367

Semiconductors turn soft: inorganic nanomembranes
journal, January 2010

  • Cavallo, Francesca; Lagally, Max G.
  • Soft Matter, Vol. 6, Issue 3
  • DOI: 10.1039/B916582G

Strain-Engineered Surface Transport in Si(001): Complete Isolation of the Surface State via Tensile Strain
journal, December 2013


Revisited Pseudo-MOSFET Models for the Characterization of Ultrathin SOI Wafers
journal, July 2009

  • Rodriguez, Noel; Cristoloveanu, Sorin; Gamiz, Francisco
  • IEEE Transactions on Electron Devices, Vol. 56, Issue 7
  • DOI: 10.1109/TED.2009.2021715

The silicon-silicon dioxide system: Its microstructure and imperfections
journal, August 1994


Determination of the bonding of alkyl monolayers to the Si(111) surface using chemical-shift, scanned-energy photoelectron diffraction
journal, August 1997

  • Terry, Jeff; Linford, Matthew R.; Wigren, Christer
  • Applied Physics Letters, Vol. 71, Issue 8
  • DOI: 10.1063/1.119726

Photosensitive hole transport in Schottky-contacted Si nanomembranes
journal, September 2014

  • Feng, Ping; Wu, Guodong; Schmidt, Oliver G.
  • Applied Physics Letters, Vol. 105, Issue 12
  • DOI: 10.1063/1.4896490

PHYSICS: Surface Transfer Doping of Semiconductors
journal, August 2006


Printing, folding and assembly methods for forming 3D mesostructures in advanced materials
journal, March 2017


The Evolution of Silicon Wafer Cleaning Technology
journal, January 1990

  • Kern, Werner
  • Journal of The Electrochemical Society, Vol. 137, Issue 6
  • DOI: 10.1149/1.2086825

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
journal, May 1989

  • Chabal, Y. J.; Higashi, G. S.; Raghavachari, K.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3
  • DOI: 10.1116/1.575980

Surface Chemical Tuning of Phonon and Electron Transport in Free-Standing Silicon Nanowire Arrays
journal, September 2016


Impact of free-surface passivation on silicon on insulator buried interface properties by pseudotransistor characterization
journal, June 2007

  • Hamaide, G.; Allibert, F.; Hovel, H.
  • Journal of Applied Physics, Vol. 101, Issue 11
  • DOI: 10.1063/1.2745398

Frontiers of silicon-on-insulator
journal, May 2003

  • Celler, G. K.; Cristoloveanu, Sorin
  • Journal of Applied Physics, Vol. 93, Issue 9
  • DOI: 10.1063/1.1558223

Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
journal, August 2001


A hemispherical electronic eye camera based on compressible silicon optoelectronics
journal, August 2008

  • Ko, Heung Cho; Stoykovich, Mark P.; Song, Jizhou
  • Nature, Vol. 454, Issue 7205, p. 748-753
  • DOI: 10.1038/nature07113

Stretchable GaAs Photovoltaics with Designs That Enable High Areal Coverage
journal, January 2011


Hydrogen desorption from the monohydride phase on Si(100)
journal, May 1990

  • Sinniah, Kumar; Sherman, Michael G.; Lewis, Lisa B.
  • The Journal of Chemical Physics, Vol. 92, Issue 9
  • DOI: 10.1063/1.458501

Electronic transport in nanometre-scale silicon-on-insulator membranes
journal, February 2006

  • Zhang, Pengpeng; Tevaarwerk, Emma; Park, Byoung-Nam
  • Nature, Vol. 439, Issue 7077, p. 703-706
  • DOI: 10.1038/nature04501

Transfer Printed Nanomembranes for Heterogeneously Integrated Membrane Photonics
journal, November 2015


Wet-chemical preparation and spectroscopic characterization of Si interfaces
journal, August 2004


Controlled Modulation of Conductance in Silicon Devices by Molecular Monolayers
journal, November 2006

  • He, Tao; He, Jianli; Lu, Meng
  • Journal of the American Chemical Society, Vol. 128, Issue 45
  • DOI: 10.1021/ja063571l

A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
journal, May 2000

  • Cristoloveanu, S.; Munteanu, D.; Liu, M. S. T.
  • IEEE Transactions on Electron Devices, Vol. 47, Issue 5
  • DOI: 10.1109/16.841236

Influence of Surface Chemical Modification on Charge Transport Properties in Ultrathin Silicon Membranes
journal, June 2009

  • Scott, Shelley A.; Peng, Weina; Kiefer, Arnold M.
  • ACS Nano, Vol. 3, Issue 7
  • DOI: 10.1021/nn9000947

Large Area Silicon Nanomembrane Photonic Devices on Unconventional Substrates
journal, August 2013

  • Xu, Xiaochuan; Subbaraman, Harish; Kwong, David
  • IEEE Photonics Technology Letters, Vol. 25, Issue 16
  • DOI: 10.1109/LPT.2013.2272678

Lowering the density of electronic defects on organic-functionalized Si(100) surfaces
journal, June 2014

  • Peng, Weina; DeBenedetti, William J. I.; Kim, Seonjae
  • Applied Physics Letters, Vol. 104, Issue 24
  • DOI: 10.1063/1.4883367

Electronic properties of two-dimensional systems
journal, April 1982


Anomalously large band-bending for HF-treated p-Si surfaces
journal, June 2003


A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates
journal, January 2006

  • Khang, Dahl-Young; Jiang, Hanqing; Huang, Young
  • Science, Vol. 311, Issue 5758, p. 208-212
  • DOI: 10.1126/science.1121401

Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics
journal, October 2010

  • Kim, Rak-Hwan; Kim, Dae-Hyeong; Xiao, Jianliang
  • Nature Materials, Vol. 9, Issue 11, p. 929-937
  • DOI: 10.1038/nmat2879

Fermi level pinning on HF etched silicon surfaces investigated by photoelectron spectroscopy
journal, January 1999

  • Schlaf, R.; Hinogami, R.; Fujitani, M.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 1
  • DOI: 10.1116/1.581568

12-GHz Thin-Film Transistors on Transferrable Silicon Nanomembranes for High-Performance Flexible Electronics
journal, September 2010


The formation of hydrogen passivated silicon single‐crystal surfaces using ultraviolet cleaning and HF etching
journal, October 1988

  • Takahagi, T.; Nagai, I.; Ishitani, A.
  • Journal of Applied Physics, Vol. 64, Issue 7
  • DOI: 10.1063/1.341489

Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes
journal, January 2013

  • Peng, Weina; Aksamija, Zlatan; Scott, Shelley A.
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2350

Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
journal, July 1986

  • Yablonovitch, E.; Allara, D. L.; Chang, C. C.
  • Physical Review Letters, Vol. 57, Issue 2, p. 249-252
  • DOI: 10.1103/PhysRevLett.57.249

The Role of Band Bending in Affecting the Surface Recombination Velocities for Si(111) in Contact with Aqueous Acidic Electrolytes
journal, April 2008

  • Michalak, David J.; Gstrein, Florian; Lewis, Nathan S.
  • The Journal of Physical Chemistry C, Vol. 112, Issue 15
  • DOI: 10.1021/jp075354s

Influence of physisorbed water on the conductivity of hydrogen terminated silicon-on-insulator surfaces
journal, December 2007

  • Dubey, G.; Lopinski, G. P.; Rosei, F.
  • Applied Physics Letters, Vol. 91, Issue 23
  • DOI: 10.1063/1.2822417

Transport news
journal, February 2006


Quantitative Determination of Contributions to the Thermoelectric Power Factor in Si Nanostructures
journal, December 2010