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Title: Correlated high-resolution x-ray diffraction photoluminescence and atom probe tomography analysis of continuous and discontinuous InxGa1-xN quantum wells

Abstract

In this study, atom probe tomography (APT) is used to characterize the influence of hydrogen dosing duringGaN barrier growth on the indium distribution of InxGa1-xN quantum wells, and correlatedmicro-photoluminescence is used to measure changes in the emission spectrum and efficiency. We found that relative to the control growth, hydrogen dosing leads to a 50% increase in emission intensity arising from discontinuous quantum wells that are narrower, of lower indium content, and with more abrupt interfaces. Additionally, simulations of carrier distributions based on APT composition profiles indicate that the greater carrier confinement leads to an increased radiative recombination rate. Furthermore, APT analysis of quantum well profiles enables refinement of x-ray diffractionanalysis for more accurate nondestructive measurements of composition.

Authors:
 [1];  [1];  [2];  [1]
+ Show Author Affiliations
  1. Northwestern Univ., Evanston, IL (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1235287
Alternate Identifier(s):
OSTI ID: 1420582
Report Number(s):
SAND-2015-5515J
Journal ID: ISSN 0003-6951; 594846
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 02; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; quantum wells; indium; photoluminescence; x-ray diffraction; III-V semiconductors

Citation Formats

Ren, Xiaochen, Riley, James R., Koleske, Daniel, and Lauhon, Lincoln J. Correlated high-resolution x-ray diffraction photoluminescence and atom probe tomography analysis of continuous and discontinuous InxGa1-xN quantum wells. United States: N. p., 2015. Web. doi:10.1063/1.4926808.
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Ren, Xiaochen, Riley, James R., Koleske, Daniel, & Lauhon, Lincoln J. Correlated high-resolution x-ray diffraction photoluminescence and atom probe tomography analysis of continuous and discontinuous InxGa1-xN quantum wells. United States. https://doi.org/10.1063/1.4926808
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Ren, Xiaochen, Riley, James R., Koleske, Daniel, and Lauhon, Lincoln J. Tue . "Correlated high-resolution x-ray diffraction photoluminescence and atom probe tomography analysis of continuous and discontinuous InxGa1-xN quantum wells". United States. https://doi.org/10.1063/1.4926808. https://www.osti.gov/servlets/purl/1235287.
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@article{osti_1235287,
title = {Correlated high-resolution x-ray diffraction photoluminescence and atom probe tomography analysis of continuous and discontinuous InxGa1-xN quantum wells},
author = {Ren, Xiaochen and Riley, James R. and Koleske, Daniel and Lauhon, Lincoln J.},
abstractNote = {In this study, atom probe tomography (APT) is used to characterize the influence of hydrogen dosing duringGaN barrier growth on the indium distribution of InxGa1-xN quantum wells, and correlatedmicro-photoluminescence is used to measure changes in the emission spectrum and efficiency. We found that relative to the control growth, hydrogen dosing leads to a 50% increase in emission intensity arising from discontinuous quantum wells that are narrower, of lower indium content, and with more abrupt interfaces. Additionally, simulations of carrier distributions based on APT composition profiles indicate that the greater carrier confinement leads to an increased radiative recombination rate. Furthermore, APT analysis of quantum well profiles enables refinement of x-ray diffractionanalysis for more accurate nondestructive measurements of composition.},
doi = {10.1063/1.4926808},
journal = {Applied Physics Letters},
number = 02,
volume = 107,
place = {United States},
year = {Tue Jul 14 00:00:00 EDT 2015},
month = {Tue Jul 14 00:00:00 EDT 2015}
}
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https://doi.org/10.1063/1.4926808
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    Works referencing / citing this record:

    Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography
    journal, April 2017

    • Bonef, Bastien; Catalano, Massimo; Lund, Cory
    • Applied Physics Letters, Vol. 110, Issue 14
    • DOI: 10.1063/1.4979786
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