Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review
Abstract
In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. Furthermore, we close by discussing the bright future for TI film growth by MBE.
- Authors:
- Publication Date:
- Research Org.:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1419688
- Alternate Identifier(s):
- OSTI ID: 1357772
- Grant/Contract Number:
- SC0016380
- Resource Type:
- Published Article
- Journal Name:
- Crystals
- Additional Journal Information:
- Journal Name: Crystals Journal Volume: 6 Journal Issue: 12; Journal ID: ISSN 2073-4352
- Publisher:
- MDPI AG
- Country of Publication:
- Germany
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; molecular beam epitaxy; topological insulator; superlattices
Citation Formats
Ginley, Theresa, Wang, Yong, and Law, Stephanie. Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review. Germany: N. p., 2016.
Web. doi:10.3390/cryst6110154.
Ginley, Theresa, Wang, Yong, & Law, Stephanie. Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review. Germany. https://doi.org/10.3390/cryst6110154
Ginley, Theresa, Wang, Yong, and Law, Stephanie. Wed .
"Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review". Germany. https://doi.org/10.3390/cryst6110154.
@article{osti_1419688,
title = {Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review},
author = {Ginley, Theresa and Wang, Yong and Law, Stephanie},
abstractNote = {In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. Furthermore, we close by discussing the bright future for TI film growth by MBE.},
doi = {10.3390/cryst6110154},
journal = {Crystals},
number = 12,
volume = 6,
place = {Germany},
year = {Wed Nov 23 00:00:00 EST 2016},
month = {Wed Nov 23 00:00:00 EST 2016}
}
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