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Title: Topological insulator film growth by molecular beam epitaxy: A review

Abstract

In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V 2-VI 3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. Furthermore, we close by discussing the bright future for TI film growth by MBE.

Authors:
 [1];  [1];  [1]
  1. Univ. of Delaware, Newark, DE (United States)
Publication Date:
Research Org.:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1419688
Alternate Identifier(s):
OSTI ID: 1357772
Grant/Contract Number:  
SC0016380
Resource Type:
Published Article
Journal Name:
Crystals
Additional Journal Information:
Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2073-4352
Publisher:
MDPI
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; molecular beam epitaxy; topological insulator; superlattices

Citation Formats

Ginley, Theresa P., Wang, Yong, and Law, Stephanie. Topological insulator film growth by molecular beam epitaxy: A review. United States: N. p., 2016. Web. doi:10.3390/cryst6110154.
Ginley, Theresa P., Wang, Yong, & Law, Stephanie. Topological insulator film growth by molecular beam epitaxy: A review. United States. doi:10.3390/cryst6110154.
Ginley, Theresa P., Wang, Yong, and Law, Stephanie. Wed . "Topological insulator film growth by molecular beam epitaxy: A review". United States. doi:10.3390/cryst6110154.
@article{osti_1419688,
title = {Topological insulator film growth by molecular beam epitaxy: A review},
author = {Ginley, Theresa P. and Wang, Yong and Law, Stephanie},
abstractNote = {In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. Furthermore, we close by discussing the bright future for TI film growth by MBE.},
doi = {10.3390/cryst6110154},
journal = {Crystals},
number = 11,
volume = 6,
place = {United States},
year = {2016},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.3390/cryst6110154

Citation Metrics:
Cited by: 6 works
Citation information provided by
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