Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
Abstract
Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and high I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.
- Authors:
-
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- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
- Swiss Federal Lab. for Materials Science and Technology, Dubendorf (Switzerland)
- Univ. of California, Berkeley, CA (United States); Samsung Electronics Co., Gyeonggi-do (Korea, Repubic of)
- Univ. of California, Berkeley, CA (United States)
- Max Planck Inst. for Polymer Research, Mainz (Germany)
- Dresden Univ. of Technology (Germany)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States); Kavli Energy NanoSciences Inst., Berkeley, CA (United States)
- Swiss Federal Lab. for Materials Science and Technology, Dubendorf (Switzerland); Univ. of Bern (Switzerland)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1416945
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, and Bokor, Jeffrey. Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons. United States: N. p., 2017.
Web. doi:10.1038/s41467-017-00734-x.
Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, & Bokor, Jeffrey. Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons. United States. https://doi.org/10.1038/s41467-017-00734-x
Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, and Bokor, Jeffrey. Thu .
"Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons". United States. https://doi.org/10.1038/s41467-017-00734-x. https://www.osti.gov/servlets/purl/1416945.
@article{osti_1416945,
title = {Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons},
author = {Llinas, Juan Pablo and Fairbrother, Andrew and Borin Barin, Gabriela and Shi, Wu and Lee, Kyunghoon and Wu, Shuang and Yong Choi, Byung and Braganza, Rohit and Lear, Jordan and Kau, Nicholas and Choi, Wonwoo and Chen, Chen and Pedramrazi, Zahra and Dumslaff, Tim and Narita, Akimitsu and Feng, Xinliang and Müllen, Klaus and Fischer, Felix and Zettl, Alex and Ruffieux, Pascal and Yablonovitch, Eli and Crommie, Michael and Fasel, Roman and Bokor, Jeffrey},
abstractNote = {Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and high I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.},
doi = {10.1038/s41467-017-00734-x},
journal = {Nature Communications},
number = 1,
volume = 8,
place = {United States},
year = {Thu Sep 21 00:00:00 EDT 2017},
month = {Thu Sep 21 00:00:00 EDT 2017}
}
Web of Science
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- Richter, Nils; Chen, Zongping; Tries, Alexander
- Scientific Reports, Vol. 10, Issue 1
Alignment of semiconducting graphene nanoribbons on vicinal Ge(001)
journal, January 2019
- Jacobberger, Robert M.; Murray, Ellen A.; Fortin-Deschênes, Matthieu
- Nanoscale, Vol. 11, Issue 11
Spin-photovoltaic effects induced by the edge magnetism in a graphene nanoribbon junction
journal, April 2019
- Zamani, Sara; Farghadan, Rouhollah
- Journal of Physics D: Applied Physics, Vol. 52, Issue 23
Reversibility and intermediate steps as key tools for the growth of extended ordered polymers via on-surface synthesis
journal, February 2018
- Di Giovannantonio, Marco; Contini, Giorgio
- Journal of Physics: Condensed Matter, Vol. 30, Issue 9
One Precursor but Two Types of Graphene Nanoribbons: On-Surface Transformations of 10,10′-Dichloro-9,9′-bianthryl on Ag(111)
journal, March 2019
- Jacobse, Peter H.; Simonov, Konstantin A.; Mangnus, Mark J. J.
- The Journal of Physical Chemistry C, Vol. 123, Issue 14
On-surface synthesis of graphene clusters from a Z-bar-linkage precursor with quaterphenyl branches
journal, January 2018
- Xu, Zhen; Kojima, Takahiro; Wang, Wanyu
- Materials Chemistry Frontiers, Vol. 2, Issue 4
The electronic transport efficiency of a graphene charge carrier guider and an Aharanov–Bohm interferometer
journal, November 2018
- Wei, Xuan; Zhang, Wen-Jing; Cheng, Shu-Guang
- Journal of Physics: Condensed Matter, Vol. 30, Issue 48
Boosting the performance of a nanoscale graphene nanoribbon field-effect transistor using graded gate engineering
journal, June 2018
- Tamersit, Khalil; Djeffal, Fayçal
- Journal of Computational Electronics, Vol. 17, Issue 3
Charge transport mechanism in networks of armchair graphene nanoribbons
journal, February 2020
- Richter, Nils; Chen, Zongping; Tries, Alexander
- Scientific Reports, Vol. 10, Issue 1
Charge transport mechanism in networks of armchair graphene nanoribbons
text, January 2020
- Richter, Nils; Chen, Zongping; Tries, Alexander
- Macmillan Publishers Limited, part of Springer Nature
Engineered electronic states in atomically precise artificial lattices and graphene nanoribbons
journal, January 2019
- Yan, Linghao; Liljeroth, Peter
- Advances in Physics: X, Vol. 4, Issue 1
Modified Engineering of Graphene Nanoribbons Prepared via On‐Surface Synthesis
journal, December 2019
- Zhou, Xiahong; Yu, Gui
- Advanced Materials, Vol. 32, Issue 6
Engineered electronic states in atomically precise artificial lattices and graphene nanoribbons
text, January 2019
- Yan, Linghao; Liljeroth, Peter
- arXiv
Nanostructured Graphene: An Active Component in Optoelectronic Devices
journal, May 2018
- Kim, Chang-Hyun
- Nanomaterials, Vol. 8, Issue 5
Bottom-up synthesis of multifunctional nanoporous graphene
journal, April 2018
- Moreno, César; Vilas-Varela, Manuel; Kretz, Bernhard
- Science, Vol. 360, Issue 6385