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Title: Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and high I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.
Authors:
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  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  2. Swiss Federal Lab. for Materials Science and Technology, Dubendorf (Switzerland)
  3. Univ. of California, Berkeley, CA (United States); Samsung Electronics Co., Gyeonggi-do (Korea, Repubic of)
  4. Univ. of California, Berkeley, CA (United States)
  5. Max Planck Inst. for Polymer Research, Mainz (Germany)
  6. Dresden Univ. of Technology (Germany)
  7. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States); Kavli Energy NanoSciences Inst., Berkeley, CA (United States)
  8. Swiss Federal Lab. for Materials Science and Technology, Dubendorf (Switzerland); Univ. of Bern (Switzerland)
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1416945

Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, and Bokor, Jeffrey. Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons. United States: N. p., Web. doi:10.1038/s41467-017-00734-x.
Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, & Bokor, Jeffrey. Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons. United States. doi:10.1038/s41467-017-00734-x.
Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, and Bokor, Jeffrey. 2017. "Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons". United States. doi:10.1038/s41467-017-00734-x. https://www.osti.gov/servlets/purl/1416945.
@article{osti_1416945,
title = {Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons},
author = {Llinas, Juan Pablo and Fairbrother, Andrew and Borin Barin, Gabriela and Shi, Wu and Lee, Kyunghoon and Wu, Shuang and Yong Choi, Byung and Braganza, Rohit and Lear, Jordan and Kau, Nicholas and Choi, Wonwoo and Chen, Chen and Pedramrazi, Zahra and Dumslaff, Tim and Narita, Akimitsu and Feng, Xinliang and Müllen, Klaus and Fischer, Felix and Zettl, Alex and Ruffieux, Pascal and Yablonovitch, Eli and Crommie, Michael and Fasel, Roman and Bokor, Jeffrey},
abstractNote = {Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and high I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.},
doi = {10.1038/s41467-017-00734-x},
journal = {Nature Communications},
number = 1,
volume = 8,
place = {United States},
year = {2017},
month = {9}
}

Works referenced in this record:

Direct oriented growth of armchair graphene nanoribbons on germanium
journal, August 2015
  • Jacobberger, Robert M.; Kiraly, Brian; Fortin-Deschenes, Matthieu
  • Nature Communications, Vol. 6, Article No. 8006
  • DOI: 10.1038/ncomms9006

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
journal, February 2008

Etching and narrowing of graphene from the edges
journal, June 2010
  • Wang, Xinran; Dai, Hongjie
  • Nature Chemistry, Vol. 2, Issue 8, p. 661-665
  • DOI: 10.1038/nchem.719

The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors
journal, July 2005
  • Chen, Zhihong; Appenzeller, Joerg; Knoch, Joachim
  • Nano Letters, Vol. 5, Issue 7, p. 1497-1502
  • DOI: 10.1021/nl0508624