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Title: Molecular Dynamics Study of High Symmetry Planar Defect Evolution during Growth of CdTe/CdS Films

Authors:
ORCiD logo [1];  [1];  [2];  [2];  [2]
  1. Sandia National Laboratories, Livermore, California 94550, United States
  2. University of Texas at El Paso, El Paso, Texas 79902, United States
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia Natioonal Laboratory
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1415335
Alternate Identifier(s):
OSTI ID: 1421857; OSTI ID: 1490039
Report Number(s):
SAND-2017-10411J
Journal ID: ISSN 1932-7447
Grant/Contract Number:  
EE0005958; AC04-94AL85000
Resource Type:
Published Article
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Name: Journal of Physical Chemistry. C Journal Volume: 122 Journal Issue: 1; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; thin films; cadmium compounds; CdTe; dislocations; grain boundaries; stacking fault; lamellar twin; double positioning twin

Citation Formats

Chavez, Jose J., Zhou, Xiao W., Almeida, Sergio F., Aguirre, Rodolfo, and Zubia, David. Molecular Dynamics Study of High Symmetry Planar Defect Evolution during Growth of CdTe/CdS Films. United States: N. p., 2017. Web. doi:10.1021/acs.jpcc.7b08527.
Chavez, Jose J., Zhou, Xiao W., Almeida, Sergio F., Aguirre, Rodolfo, & Zubia, David. Molecular Dynamics Study of High Symmetry Planar Defect Evolution during Growth of CdTe/CdS Films. United States. doi:10.1021/acs.jpcc.7b08527.
Chavez, Jose J., Zhou, Xiao W., Almeida, Sergio F., Aguirre, Rodolfo, and Zubia, David. Wed . "Molecular Dynamics Study of High Symmetry Planar Defect Evolution during Growth of CdTe/CdS Films". United States. doi:10.1021/acs.jpcc.7b08527.
@article{osti_1415335,
title = {Molecular Dynamics Study of High Symmetry Planar Defect Evolution during Growth of CdTe/CdS Films},
author = {Chavez, Jose J. and Zhou, Xiao W. and Almeida, Sergio F. and Aguirre, Rodolfo and Zubia, David},
abstractNote = {},
doi = {10.1021/acs.jpcc.7b08527},
journal = {Journal of Physical Chemistry. C},
number = 1,
volume = 122,
place = {United States},
year = {2017},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1021/acs.jpcc.7b08527

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Atomistic structures of three types of planar defects indicated by the dashed lines. (a) An intrinsic stacking fault ending in a Shockley partial dislocation core, (b) a double-positioning twin boundary (Te-core configuration) also known as a Σ3(112) grain boundary, and (c) a lamellar twin boundary also known asmore » a Σ3(111) grain boundary.« less

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