Silicon Heterojunction System Field Performance

Jordan, Dirk C.; Deline, Chris; Johnston, Steve; Rummel, Steve R.; Sekulic, Bill; Hacke, Peter; Kurtz, Sarah R.; Davis, Kristopher O.; Schneller, Eric John; Sun, Xingshu; Alam, Muhammad A.; Sinton, Ronald A.

doi:10.1109/JPHOTOV.2017.2765680

Title: Silicon Heterojunction System Field Performance

Abstract

A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc, thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performance changes are fairly uniform across the module, indicating changes occur primarily within the cells.

Authors:

Jordan, Dirk C. ^[1]; Deline, Chris ^[1]; Johnston, Steve ^[1]; Rummel, Steve R. ^[1]; Sekulic, Bill ^[1]; Hacke, Peter ^[1]; Kurtz, Sarah R. ^[1]; Davis, Kristopher O. ^[2]; Schneller, Eric John ^[2]; Sun, Xingshu ^[3]; Alam, Muhammad A. ^[3]; Sinton, Ronald A. ^[4]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Univ. of Central Florida, Orlando, FL (United States)
Purdue Univ., West Lafayette, IN (United States)
Sinton Instruments, Boulder, CO (United States)

Publication Date:: Fri Nov 17 00:00:00 EST 2017

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1413901

Report Number(s):: NREL/JA-5J00-68683
Journal ID: ISSN 2156-3381

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Journal of Photovoltaics

Additional Journal Information:: Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2156-3381

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 42 ENGINEERING; degradation rates; durability; heterojunction with intrinsic thin-film layer; photovoltaic field performance; Si heterojunction

Citation Formats


                    Jordan, Dirk C., Deline, Chris, Johnston, Steve, Rummel, Steve R., Sekulic, Bill, Hacke, Peter, Kurtz, Sarah R., Davis, Kristopher O., Schneller, Eric John, Sun, Xingshu, Alam, Muhammad A., and Sinton, Ronald A. Silicon Heterojunction System Field Performance.  United States: N. p., 2017. 
Web.  doi:10.1109/JPHOTOV.2017.2765680.

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                    Jordan, Dirk C., Deline, Chris, Johnston, Steve, Rummel, Steve R., Sekulic, Bill, Hacke, Peter, Kurtz, Sarah R., Davis, Kristopher O., Schneller, Eric John, Sun, Xingshu, Alam, Muhammad A., & Sinton, Ronald A. Silicon Heterojunction System Field Performance.  United States.  https://doi.org/10.1109/JPHOTOV.2017.2765680

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                    Jordan, Dirk C., Deline, Chris, Johnston, Steve, Rummel, Steve R., Sekulic, Bill, Hacke, Peter, Kurtz, Sarah R., Davis, Kristopher O., Schneller, Eric John, Sun, Xingshu, Alam, Muhammad A., and Sinton, Ronald A. Fri .  
"Silicon Heterojunction System Field Performance".  United States.  https://doi.org/10.1109/JPHOTOV.2017.2765680.  https://www.osti.gov/servlets/purl/1413901.

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@article{osti_1413901,

  title        = {Silicon Heterojunction System Field Performance},

  author       = {Jordan, Dirk C. and Deline, Chris and Johnston, Steve and Rummel, Steve R. and Sekulic, Bill and Hacke, Peter and Kurtz, Sarah R. and Davis, Kristopher O. and Schneller, Eric John and Sun, Xingshu and Alam, Muhammad A. and Sinton, Ronald A.},

  abstractNote = {A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc, thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performance changes are fairly uniform across the module, indicating changes occur primarily within the cells.},

  doi          = {10.1109/JPHOTOV.2017.2765680},

  journal      = {IEEE Journal of Photovoltaics},

  number       = 1,

  volume       = 8,

  place        = {United States},

  year         = {Fri Nov 17 00:00:00 EST 2017},

  month        = {Fri Nov 17 00:00:00 EST 2017}

}

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https://doi.org/10.1109/JPHOTOV.2017.2765680

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Works referencing / citing this record:

Real-time monitoring and diagnosis of photovoltaic system degradation only using maximum power point-the Suns-Vmp method
journal, July 2018

Sun, Xingshu; Chavali, Raghu Vamsi Krishna; Alam, Muhammad Ashraful
Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 1
DOI: 10.1002/pip.3043

Insights into the Degradation of Amorphous Silicon Passivation Layer for Heterojunction Solar Cells
journal, December 2018

Bernardini, Simone; Bertoni, Mariana I.
physica status solidi (a)
DOI: 10.1002/pssa.201800705

Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules
journal, May 2019

Sulas, Dana B.; Johnston, Steve; Jordan, Dirk C.
Solar RRL, Vol. 3, Issue 8
DOI: 10.1002/solr.201900102

Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules
journal, May 2019

Sulas, Dana B.; Johnston, Steve; Jordan, Dirk C.
Solar RRL, Vol. 3, Issue 8
DOI: 10.1002/solr.201970074

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Similar Records

Title: Silicon Heterojunction System Field Performance

Abstract

Citation Formats

Real-time monitoring and diagnosis of photovoltaic system degradation only using maximum power point-the Suns-Vmp method journal, July 2018

Insights into the Degradation of Amorphous Silicon Passivation Layer for Heterojunction Solar Cells journal, December 2018

Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules journal, May 2019

Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules journal, May 2019

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journal, July 2018

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journal, December 2018

Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules
journal, May 2019

Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules
journal, May 2019