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Title: GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Authors:
 [1] ;  [2] ; ORCiD logo [1] ; ORCiD logo [1] ;  [2] ;  [2] ; ORCiD logo [1]
  1. NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, New York 14623, USA
  2. Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
Publication Date:
Grant/Contract Number:
EE0004946 / 60964954- 51077
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1411283

Nelson, George T., Juang, Bor-Chau, Slocum, Michael A., Bittner, Zachary S., Laghumavarapu, Ramesh B., Huffaker, Diana L., and Hubbard, Seth M.. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell. United States: N. p., Web. doi:10.1063/1.4991548.
Nelson, George T., Juang, Bor-Chau, Slocum, Michael A., Bittner, Zachary S., Laghumavarapu, Ramesh B., Huffaker, Diana L., & Hubbard, Seth M.. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell. United States. doi:10.1063/1.4991548.
Nelson, George T., Juang, Bor-Chau, Slocum, Michael A., Bittner, Zachary S., Laghumavarapu, Ramesh B., Huffaker, Diana L., and Hubbard, Seth M.. 2017. "GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell". United States. doi:10.1063/1.4991548.
@article{osti_1411283,
title = {GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell},
author = {Nelson, George T. and Juang, Bor-Chau and Slocum, Michael A. and Bittner, Zachary S. and Laghumavarapu, Ramesh B. and Huffaker, Diana L. and Hubbard, Seth M.},
abstractNote = {},
doi = {10.1063/1.4991548},
journal = {Applied Physics Letters},
number = 23,
volume = 111,
place = {United States},
year = {2017},
month = {12}
}

Works referenced in this record:

High-efficiency GaInP?GaAs?InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007
  • Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W.
  • Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502
  • DOI: 10.1063/1.2753729