Response of the Lattice across the Filling-Controlled Mott Metal-Insulator Transition of a Rare Earth Titanate

Kim, Honggyu; Marshall, Patrick B.; Ahadi, Kaveh; Mates, Thomas E.; Mikheev, Evgeny; Stemmer, Susanne

doi:10.1103/PhysRevLett.119.186803

Title: Response of the Lattice across the Filling-Controlled Mott Metal-Insulator Transition of a Rare Earth Titanate

Journal Article · Thu Nov 02 04:00:00 UTC 2017 · Physical Review Letters

DOI: https://doi.org/10.1103/PhysRevLett.119.186803 · OSTI ID:1410526

Kim, Honggyu ^[1]; Marshall, Patrick B. ^[1]; Ahadi, Kaveh ^[1]; Mates, Thomas E. ^[1]; Mikheev, Evgeny ^[2]; Stemmer, Susanne ^[1]

Univ. of California, Santa Barbara, CA (United States)
Univ. of California, Santa Barbara, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

The lattice response of a prototype Mott insulator, SmTiO₃, to hole doping is investigated with atomic-scale spatial resolution. SmTiO₃ films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO₃-type distortions are investigated using an atomic resolution scanning transmission electron microscopy technique that can resolve small lattice distortions with picometer precision. We show that these distortions are gradually and uniformly reduced as the Sr concentration is increased without any phase separation. Significant distortions persist into the metallic state. In conclusion, the results present a new picture of the physics of this prototype filling-controlled MIT, which is discussed.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515; FG02-02ER45994

OSTI ID:: 1410526

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 18 Vol. 119; ISSN 0031-9007; ISSN PRLTAO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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