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Title: Decomposition of silicon carbide at high pressures and temperatures

Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Grant/Contract Number:  
AC02-06CH11357; NA0001974; SC0012704; FG02- 99ER45775; NA-0002006
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 17; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Daviau, Kierstin, and Lee, Kanani K. M. Decomposition of silicon carbide at high pressures and temperatures. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.174102.
Daviau, Kierstin, & Lee, Kanani K. M. Decomposition of silicon carbide at high pressures and temperatures. United States. doi:10.1103/PhysRevB.96.174102.
Daviau, Kierstin, and Lee, Kanani K. M. Fri . "Decomposition of silicon carbide at high pressures and temperatures". United States. doi:10.1103/PhysRevB.96.174102.
title = {Decomposition of silicon carbide at high pressures and temperatures},
author = {Daviau, Kierstin and Lee, Kanani K. M.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.174102},
journal = {Physical Review B},
number = 17,
volume = 96,
place = {United States},
year = {2017},
month = {11}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.96.174102

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Cited by: 8 works
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