Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

Schwartz, J.; Aloni, S.; Ogletree, D. F.; Tomut, M.; Bender, M.; Severin, D.; Trautmann, C.; Rangelow, I. W.; Schenkel, T.

doi:10.1063/1.4903075

Title: Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

Abstract

In this paper, we exposed nitrogen-implanted diamonds to beams of swift heavy ions (~1 GeV, ~4 MeV/u) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV^- centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV^- yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions could enable the formation of three dimensional NV^- assemblies over relatively large distances of tens of micrometers. Finally and further, our results show that NV center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond.

Authors:

Schwartz, J. ^[1]; Aloni, S. ^[2]; Ogletree, D. F. ^[2];

^[3]; Bender, M. ^[3]; Severin, D. ^[3]; Trautmann, C. ^[4]; Rangelow, I. W. ^[5]; Schenkel, T. ^[6]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator Technology and Applied Physics Division; Ilmenau Univ. of Technology (Germany). Dept. of Microelectronics and Nanoelectric Systems
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). The Molecular Foundry
GSI Helmholtz Center for Heavy Ion Research, Darmstadt (Germany)
GSI Helmholtz Center for Heavy Ion Research, Darmstadt (Germany); Technical Univ. of Darmstadt (Germany)
Ilmenau Univ. of Technology (Germany). Dept. of Microelectronics and Nanoelectric Systems
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator Technology and Applied Physics Division

Publication Date:: Wed Dec 03 00:00:00 EST 2014

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); LBNL Laboratory Directed Research and Development (LDRD) Program

OSTI Identifier:: 1407217

Alternate Identifier(s):: OSTI ID: 1226578

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 116; Journal Issue: 21; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 74 ATOMIC AND MOLECULAR PHYSICS; diamond; electron radiation effects; ion implantation; vacancies; ion radiation effects

Citation Formats


                    Schwartz, J., Aloni, S., Ogletree, D. F., Tomut, M., Bender, M., Severin, D., Trautmann, C., Rangelow, I. W., and Schenkel, T. Local formation of nitrogen-vacancy centers in diamond by swift heavy ions.  United States: N. p., 2014. 
Web.  doi:10.1063/1.4903075.

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                    Schwartz, J., Aloni, S., Ogletree, D. F., Tomut, M., Bender, M., Severin, D., Trautmann, C., Rangelow, I. W., & Schenkel, T. Local formation of nitrogen-vacancy centers in diamond by swift heavy ions.  United States.  https://doi.org/10.1063/1.4903075

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                    Schwartz, J., Aloni, S., Ogletree, D. F., Tomut, M., Bender, M., Severin, D., Trautmann, C., Rangelow, I. W., and Schenkel, T. Wed .  
"Local formation of nitrogen-vacancy centers in diamond by swift heavy ions".  United States.  https://doi.org/10.1063/1.4903075.  https://www.osti.gov/servlets/purl/1407217.

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@article{osti_1407217,

  title        = {Local formation of nitrogen-vacancy centers in diamond by swift heavy ions},

  author       = {Schwartz, J. and Aloni, S. and Ogletree, D. F. and Tomut, M. and Bender, M. and Severin, D. and Trautmann, C. and Rangelow, I. W. and Schenkel, T.},

  abstractNote = {In this paper, we exposed nitrogen-implanted diamonds to beams of swift heavy ions (~1 GeV, ~4 MeV/u) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV- centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV- yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions could enable the formation of three dimensional NV- assemblies over relatively large distances of tens of micrometers. Finally and further, our results show that NV center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond.},

  doi          = {10.1063/1.4903075},

  journal      = {Journal of Applied Physics},

  number       = 21,

  volume       = 116,

  place        = {United States},

  year         = {Wed Dec 03 00:00:00 EST 2014},

  month        = {Wed Dec 03 00:00:00 EST 2014}

}

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Title: Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

Abstract

Citation Formats

The nitrogen-vacancy colour centre in diamond journal, July 2013

About the art to shoot with single ions journal, September 2003

Quantum computers journal, March 2010

Increasing the coherence time of single electron spins in diamond by high temperature annealing journal, December 2010

Generation of single color centers by focused nitrogen implantation journal, December 2005

Room-temperature entanglement between single defect spins in diamond journal, February 2013

Depletion of nitrogen‐vacancy color centers in diamond via hydrogen passivation journal, February 2012

Nanoscale imaging magnetometry with diamond spins under ambient conditions journal, October 2008

Towards pump–probe experiments of defect dynamics with short ion beam pulses journal, November 2013

Chip-Scale Nanofabrication of Single Spins and Spin Arrays in Diamond journal, August 2010

Atomistic simulations of swift ion tracks in diamond and graphite journal, March 2007

Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing journal, April 2011

Single atom doping for quantum device development in diamond and silicon journal, November 2008

Improved single ion implantation with scanning probe alignment journal, November 2012

Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond journal, April 2012

Nitrogen doping of diamond by ion implantation journal, March 1997

Table of Contents journal, July 2001

Nano-hillock formation in diamond-like carbon induced by swift heavy projectiles in the electronic stopping regime: Experiments and atomistic simulations journal, September 2012

Charge state manipulation of qubits in diamond journal, January 2012

Nanometric transformation of the matter by short and intense electronic excitation: Experimental data versus inelastic thermal spike model journal, April 2012

SRIM – The stopping and range of ions in matter (2010) journal, June 2010

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Radiation effects in nuclear materials: Role of nuclear and electronic energy losses and their synergy journal, July 2013

Dark States of Single Nitrogen-Vacancy Centers in Diamond Unraveled by Single Shot NMR journal, April 2011

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The nitrogen-vacancy colour centre in diamond
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About the art to shoot with single ions
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Generation of single color centers by focused nitrogen implantation
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Room-temperature entanglement between single defect spins in diamond
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Depletion of nitrogen‐vacancy color centers in diamond via hydrogen passivation
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Nanoscale imaging magnetometry with diamond spins under ambient conditions
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Towards pump–probe experiments of defect dynamics with short ion beam pulses
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Atomistic simulations of swift ion tracks in diamond and graphite
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Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing
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Single atom doping for quantum device development in diamond and silicon
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Improved single ion implantation with scanning probe alignment
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Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond
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Nitrogen doping of diamond by ion implantation
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Table of Contents
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Nano-hillock formation in diamond-like carbon induced by swift heavy projectiles in the electronic stopping regime: Experiments and atomistic simulations
journal, September 2012

Charge state manipulation of qubits in diamond
journal, January 2012

Nanometric transformation of the matter by short and intense electronic excitation: Experimental data versus inelastic thermal spike model
journal, April 2012

SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

Creating diamond color centers for quantum optical applications
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Synergy of Electronic Excitations and Elastic Collision Spikes in Sputtering of Heavy Metal Oxides
journal, May 1998

Radiation effects in nuclear materials: Role of nuclear and electronic energy losses and their synergy
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Dark States of Single Nitrogen-Vacancy Centers in Diamond Unraveled by Single Shot NMR
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Electron Beam Controlled Restructuring of Luminescence Centers in Polycrystalline Diamond
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Fabrication of nitrogen vacancy color centers by femtosecond pulse laser illumination
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Implantation of labelled single nitrogen vacancy centers in diamond using N15
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Irradiation of materials with short, intense ion pulses at NDCX-II
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Spin properties of NV centers in high-pressure, high-temperature grown diamond
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