DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

Abstract

Abstract not provided.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Lab. for Physical Sciences, College Park, MD (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1406367
Alternate Identifier(s):
OSTI ID: 1465800
Report Number(s):
SAND-2017-11273J; SAND-2017-6009J
Journal ID: ISSN 1367-2630; 657902; TRN: US1703263
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
New Journal of Physics
Additional Journal Information:
Journal Volume: 19; Journal Issue: 11; Journal ID: ISSN 1367-2630
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; thin film; molecular beam epitaxy; scanning tunneling microscopy; Si(100); oxide; growth pit; defect; impurity

Citation Formats

Yitamben, Esmeralda, Butera, Robert E., Swartzentruber, Brian S., Simonson, Robert J., Misra, Shashank, Carroll, Malcolm S., and Bussmann, Ezra. Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy. United States: N. p., 2017. Web. doi:10.1088/1367-2630/aa9397.
Yitamben, Esmeralda, Butera, Robert E., Swartzentruber, Brian S., Simonson, Robert J., Misra, Shashank, Carroll, Malcolm S., & Bussmann, Ezra. Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy. United States. https://doi.org/10.1088/1367-2630/aa9397
Yitamben, Esmeralda, Butera, Robert E., Swartzentruber, Brian S., Simonson, Robert J., Misra, Shashank, Carroll, Malcolm S., and Bussmann, Ezra. Wed . "Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy". United States. https://doi.org/10.1088/1367-2630/aa9397. https://www.osti.gov/servlets/purl/1406367.
@article{osti_1406367,
title = {Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy},
author = {Yitamben, Esmeralda and Butera, Robert E. and Swartzentruber, Brian S. and Simonson, Robert J. and Misra, Shashank and Carroll, Malcolm S. and Bussmann, Ezra},
abstractNote = {Abstract not provided.},
doi = {10.1088/1367-2630/aa9397},
journal = {New Journal of Physics},
number = 11,
volume = 19,
place = {United States},
year = {Wed Nov 15 00:00:00 EST 2017},
month = {Wed Nov 15 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Surface Waves and Strain Modulations in Si1-xGex Alloy Layers on Si
journal, January 1992


Effect of surface steps on oxide-cluster nucleation and sticking of oxygen on Si(001) surfaces
journal, April 1999


Evolution of surface morphology of Si(100)-(2×1) during oxygen adsorption at elevated temperatures
journal, July 1994


Finite-temperature phase diagram of vicinal Si(100) surfaces
journal, May 1990


Silicon quantum electronics
journal, July 2013

  • Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea
  • Reviews of Modern Physics, Vol. 85, Issue 3
  • DOI: 10.1103/RevModPhys.85.961

Metamorphic epitaxial materials
journal, March 2016

  • Richardson, Christopher J. K.; Lee, Minjoo Larry
  • MRS Bulletin, Vol. 41, Issue 3
  • DOI: 10.1557/mrs.2016.7

Controllable valley splitting in silicon quantum devices
journal, December 2006

  • Goswami, Srijit; Slinker, K. A.; Friesen, Mark
  • Nature Physics, Vol. 3, Issue 1
  • DOI: 10.1038/nphys475

Investigating the regrowth surface of Si:P δ-layers toward vertically stacked three dimensional devices
journal, December 2009

  • McKibbin, S. R.; Clarke, W. R.; Fuhrer, A.
  • Applied Physics Letters, Vol. 95, Issue 23
  • DOI: 10.1063/1.3269924

Theory of valley-orbit coupling in a Si/SiGe quantum dot
journal, March 2010


Exchange in Silicon-Based Quantum Computer Architecture
journal, December 2001


Interface roughness, valley-orbit coupling, and valley manipulation in quantum dots
journal, November 2010


Multivalley effective mass theory simulation of donors in silicon
journal, June 2015


Epitaxial growth of silicon on Si(001) by scanning tunneling microscopy
journal, January 1990

  • Hamers, R. J.; Köhler, U. K.; Demuth, J. E.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 8, Issue 1
  • DOI: 10.1116/1.577063

Growth and equilibrium structures in the epitaxy of Si on Si(001)
journal, November 1989


Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
journal, September 1990


Semiconductor molecular‐beam epitaxy at low temperatures
journal, April 1995

  • Eaglesham, D. J.
  • Journal of Applied Physics, Vol. 77, Issue 8
  • DOI: 10.1063/1.358597

Surface roughening during low temperature Si(100) epitaxy
journal, August 1997

  • Karpenko, O. P.; Yalisove, S. M.; Eaglesham, D. J.
  • Journal of Applied Physics, Vol. 82, Issue 3
  • DOI: 10.1063/1.365883

Instabilities in crystal growth by atomic or molecular beams
journal, February 2000


Origin of roughening in epitaxial growth of silicon on Si(0 0 1) and Ge(0 0 1) surfaces
journal, June 2001


Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
journal, September 2001


Roughening of steps during homoepitaxial growth on Si(001)
journal, December 1993


Kinetic Growth Instabilities on Vicinal Si(001) Surfaces
journal, August 1999


On the microscopic origin of the kinetic step bunching instability on vicinal Si()
journal, December 2002


Crystal surfaces in and out of equilibrium: A modern view
journal, March 2010

  • Misbah, Chaouqi; Pierre-Louis, Olivier; Saito, Yukio
  • Reviews of Modern Physics, Vol. 82, Issue 1
  • DOI: 10.1103/RevModPhys.82.981

{311} facets of selectively grown epitaxial Si layers onSiO2-patterned Si(100) surfaces
journal, December 1993


Structures of Steps and Appearances of {311} Facets on Si(100) Surfaces
journal, January 1995


Growth and perfection of chemically-deposited epitaxial layers of Si and GaAs
journal, January 1968


Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh Vacuum
journal, September 1968

  • Abbink, H. C.; Broudy, R. M.; McCarthy, G. P.
  • Journal of Applied Physics, Vol. 39, Issue 10
  • DOI: 10.1063/1.1655818

Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
journal, March 1986

  • Meyerson, B. S.
  • Applied Physics Letters, Vol. 48, Issue 12
  • DOI: 10.1063/1.96673

Examination of pits appearing on selectively grown Si film on SiO2 patterned wafers
journal, July 1996


In situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature
journal, April 1997

  • Wilk, G. D.; Wei, Yi; Edwards, Hal
  • Applied Physics Letters, Vol. 70, Issue 17
  • DOI: 10.1063/1.119083

Self-Assembly of Quantum-Dot Molecules: Heterogeneous Nucleation of SiGe Islands on Si(100)
journal, August 1998


Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy
journal, February 2002

  • Jernigan, Glenn G.; Thompson, Phillip E.; Twigg, Mark E.
  • Materials Science and Engineering: B, Vol. 89, Issue 1-3
  • DOI: 10.1016/S0921-5107(01)00819-4

Pyramid-like nanostructures created by Si homoepitaxy on Si(001)
journal, February 2009

  • Galiana, N.; Martin, P. P.; Munuera, C.
  • Materials Science in Semiconductor Processing, Vol. 12, Issue 1-2
  • DOI: 10.1016/j.mssp.2009.07.016

Influence of irregular growth of monoatomic steps during Si/Si(001) epitaxy on generation of surface defects
conference, May 2013


Competing relaxation mechanisms in strained layers
journal, May 1994


Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films
journal, January 1998

  • Van Nostrand, J. E.; Cahill, David G.; Petrov, I.
  • Journal of Applied Physics, Vol. 83, Issue 2
  • DOI: 10.1063/1.366799

Antiphase boundaries as nucleation centers in low-temperature silicon epitaxial growth
journal, October 1993

  • Bronikowski, Michael J.; Wang, Yajun; Hamers, Robert J.
  • Physical Review B, Vol. 48, Issue 16
  • DOI: 10.1103/PhysRevB.48.12361

Atomistic Processes in the Early Stages of Thin-Film Growth
journal, April 1997


STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection
journal, July 1992


Evolution of atomic‐scale roughening on Si(001)‐(2×1) surfaces resulting from high temperature oxidation
journal, May 1995

  • Seiple, J. V.; Pelz, J. P.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, Issue 3
  • DOI: 10.1116/1.579825

Stabilities of single-layer and bilayer steps on Si(001) surfaces
journal, October 1987


Steps on surfaces: experiment and theory
journal, September 1999


Elastic cost of silicon step rebonding
journal, January 2016


Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces
journal, July 1989

  • Swartzentruber, B. S.; Mo, Y. ‐W.; Webb, M. B.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 4
  • DOI: 10.1116/1.576167

Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
journal, January 1986

  • Ishizaka, Akitoshi
  • Journal of The Electrochemical Society, Vol. 133, Issue 4
  • DOI: 10.1149/1.2108651

Evolution of surface morphology and strain during SiGe epitaxy
journal, December 1992


Cuspidal pit formation during the growth of SixGe1−x strained films
journal, January 1995

  • Chen, K. M.; Jesson, D. E.; Pennycook, S. J.
  • Applied Physics Letters, Vol. 66, Issue 1
  • DOI: 10.1063/1.114172

Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(001)
journal, July 2000

  • Di Gaspare, L.; Palange, E.; Capellini, G.
  • Journal of Applied Physics, Vol. 88, Issue 1
  • DOI: 10.1063/1.373705

Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of “quantum fortresses”
journal, September 2002

  • Gray, Jennifer L.; Hull, Robert; Floro, Jerrold A.
  • Applied Physics Letters, Vol. 81, Issue 13
  • DOI: 10.1063/1.1509094

Substrate pit formation and surface wetting during thermal annealing of strained-Si/relaxed-Si0.78Ge0.22 heterostructure
journal, February 2007

  • Jang, C. H.; Paik, S. I.; Kim, Y. W.
  • Applied Physics Letters, Vol. 90, Issue 9
  • DOI: 10.1063/1.2696228

The interaction of molecular and atomic oxygen with Si(100) and Si(111)
journal, January 1993


Gas phase etching of Si(111)-(7×7) surfaces by oxygen observed by scanning tunneling microscopy
journal, November 1993

  • Donig, F.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 11, Issue 6
  • DOI: 10.1116/1.586527

Growth of epitaxial germanium-silicon heterostructures by chemical vapour deposition
journal, February 1993


Growth mode inSi(100)(2×1)epitaxy by low-temperature chemical-vapor deposition
journal, May 1998