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Title: Long‐Term Structural Evolution of an Intercalated Layered Semiconductor

Abstract

Intercalated molecules can dramatically modify the electronic band structure of layered semiconductors, significantly altering the optical properties of the material. In the layered monochalcogenide Gallium Telluride (GaTe), exposure to air induces a nearly 1 eV reduction of its band gap due to the interlayer diffusion and chemisorption of oxygen. The effect of oxygen chemisorption at the Te‐terminated surfaces on the structure of GaTe, however, is much less known. To better understand the structure–property relationship of intercalated GaTe, a systematic, long‐term, X‐ray diffraction study has been performed on GaTe exfoliated crystals exposed to ambient conditions. It is observed that the structural changes are not limited to a previously observed short‐term increase in lattice expansion. Over the course of months and even years after exfoliation, the oxygen adsorbates continue to modify the structure of GaTe, inducing significant disorder and grain reorientation. It is estimated that approximately one out of every two grains is slightly displaced by the intercalating oxygen, demonstrating a significant increase in grain mosaicity, while still maintaining the original {−2 0 1} out‐of‐plane texture. Correlating these structural transformations to observed changes in electrical and optical properties will enable capitalization of the use of adsorbates to engineer novel properties in thesemore » layered materials.« less

Authors:
 [1];  [2];  [2];  [1]
  1. Department of Materials Science and Engineering Stanford University Stanford CA 94305 USA
  2. Department of Materials Science and Engineering University of California Berkeley CA 94720 USA, Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1400616
Grant/Contract Number:  
DE‐AC02‐05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Name: Advanced Functional Materials Journal Volume: 27 Journal Issue: 14; Journal ID: ISSN 1616-301X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Chew, Annabel R., Fonseca, Jose J., Dubon, Oscar D., and Salleo, Alberto. Long‐Term Structural Evolution of an Intercalated Layered Semiconductor. Germany: N. p., 2017. Web. doi:10.1002/adfm.201605038.
Chew, Annabel R., Fonseca, Jose J., Dubon, Oscar D., & Salleo, Alberto. Long‐Term Structural Evolution of an Intercalated Layered Semiconductor. Germany. https://doi.org/10.1002/adfm.201605038
Chew, Annabel R., Fonseca, Jose J., Dubon, Oscar D., and Salleo, Alberto. Wed . "Long‐Term Structural Evolution of an Intercalated Layered Semiconductor". Germany. https://doi.org/10.1002/adfm.201605038.
@article{osti_1400616,
title = {Long‐Term Structural Evolution of an Intercalated Layered Semiconductor},
author = {Chew, Annabel R. and Fonseca, Jose J. and Dubon, Oscar D. and Salleo, Alberto},
abstractNote = {Intercalated molecules can dramatically modify the electronic band structure of layered semiconductors, significantly altering the optical properties of the material. In the layered monochalcogenide Gallium Telluride (GaTe), exposure to air induces a nearly 1 eV reduction of its band gap due to the interlayer diffusion and chemisorption of oxygen. The effect of oxygen chemisorption at the Te‐terminated surfaces on the structure of GaTe, however, is much less known. To better understand the structure–property relationship of intercalated GaTe, a systematic, long‐term, X‐ray diffraction study has been performed on GaTe exfoliated crystals exposed to ambient conditions. It is observed that the structural changes are not limited to a previously observed short‐term increase in lattice expansion. Over the course of months and even years after exfoliation, the oxygen adsorbates continue to modify the structure of GaTe, inducing significant disorder and grain reorientation. It is estimated that approximately one out of every two grains is slightly displaced by the intercalating oxygen, demonstrating a significant increase in grain mosaicity, while still maintaining the original {−2 0 1} out‐of‐plane texture. Correlating these structural transformations to observed changes in electrical and optical properties will enable capitalization of the use of adsorbates to engineer novel properties in these layered materials.},
doi = {10.1002/adfm.201605038},
journal = {Advanced Functional Materials},
number = 14,
volume = 27,
place = {Germany},
year = {Wed Mar 01 00:00:00 EST 2017},
month = {Wed Mar 01 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1002/adfm.201605038

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Cited by: 7 works
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Works referenced in this record:

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides
journal, May 2012


XPS study of InTe and GaTe single crystals oxidation
journal, May 2006


Layered GaTe Crystals for Radiation Detectors
journal, August 2011

  • Mandal, Krishna C.; Krishna, Ramesh M.; Hayes, Timothy C.
  • IEEE Transactions on Nuclear Science, Vol. 58, Issue 4
  • DOI: 10.1109/TNS.2011.2140330

X-ray line broadening from filed aluminium and wolfram
journal, January 1953


Topological Insulators and Nematic Phases from Spontaneous Symmetry Breaking in 2D Fermi Systems with a Quadratic Band Crossing
journal, July 2009


Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides
journal, June 2016


Depth profile characterization of electrodeposited multi-thin-film structures by low angle of incidence X-ray diffractometry
journal, October 2005


Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating
journal, February 2016

  • Li, Yao; Duerloo, Karel-Alexander N.; Wauson, Kerry
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms10671

2D materials: to graphene and beyond
journal, January 2011

  • Mas-Ballesté, Rubén; Gómez-Navarro, Cristina; Gómez-Herrero, Julio
  • Nanoscale, Vol. 3, Issue 1
  • DOI: 10.1039/C0NR00323A

Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping
journal, May 2002

  • Pereira, S.; Correia, M. R.; Pereira, E.
  • Applied Physics Letters, Vol. 80, Issue 21
  • DOI: 10.1063/1.1481786

Residual stress measurement in textured thin film by grazing-incidence X-ray diffraction
journal, October 2002


Estimation of lattice strain in nanocrystalline silver from X-ray diffraction line broadening
journal, December 2007


High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes
journal, December 2013

  • Liu, Fucai; Shimotani, Hidekazu; Shang, Hui
  • ACS Nano, Vol. 8, Issue 1
  • DOI: 10.1021/nn4054039

Bandgap opening in few-layered monoclinic MoTe2
journal, May 2015

  • Keum, Dong Hoon; Cho, Suyeon; Kim, Jung Ho
  • Nature Physics, Vol. 11, Issue 6
  • DOI: 10.1038/nphys3314

Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating
journal, August 2015

  • Shi, Wu; Ye, Jianting; Zhang, Yijin
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep12534

Self-organised nanostructures, obtained by oxidation of III–VI compounds
journal, March 2006


Diffusion of Oxygen in Fused Silica
journal, April 1965


Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

  • Radisavljevic, Branimir; Kis, Andras
  • Nature Materials, Vol. 12, Issue 9
  • DOI: 10.1038/nmat3687

Flexible photodetectors with single-crystalline GaTe nanowires
journal, January 2014

  • Yu, Gang; Liu, Zhe; Xie, Xuming
  • J. Mater. Chem. C, Vol. 2, Issue 30
  • DOI: 10.1039/C4TC00917G

Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air
journal, May 2016

  • Fonseca, Jose J.; Tongay, Sefaattin; Topsakal, Mehmet
  • Advanced Materials, Vol. 28, Issue 30
  • DOI: 10.1002/adma.201601151

High-performance flexible photodetectors based on GaTe nanosheets
journal, January 2015

  • Wang, Zhenxing; Safdar, Muhammad; Mirza, Misbah
  • Nanoscale, Vol. 7, Issue 16
  • DOI: 10.1039/C4NR07313D

Symmetry-Dependent Exciton-Phonon Coupling in 2D and Bulk MoS 2 Observed by Resonance Raman Scattering
journal, April 2015


Emerging opportunities in the two-dimensional chalcogenide systems and architecture
journal, December 2016

  • Cain, Jeffrey D.; Hanson, Eve D.; Shi, Fengyuan
  • Current Opinion in Solid State and Materials Science, Vol. 20, Issue 6
  • DOI: 10.1016/j.cossms.2016.06.001

Williamson-Hall analysis in estimation of lattice strain in nanometer-sized ZnO particles
journal, January 2012

  • Mote, Vd; Purushotham, Y.; Dole, Bn
  • Journal of Theoretical and Applied Physics, Vol. 6, Issue 1
  • DOI: 10.1186/2251-7235-6-6

Metallic 1T phase MoS2 nanosheets as supercapacitor electrode materials
journal, March 2015

  • Acerce, Muharrem; Voiry, Damien; Chhowalla, Manish
  • Nature Nanotechnology, Vol. 10, Issue 4
  • DOI: 10.1038/nnano.2015.40