Enhancing the Photoactivity of Faceted BiVO4 via Annealing in Oxygen-Deficient Condition
Abstract
Thermal annealing of metal oxides in oxygen‐deficient atmosphere, particularly reducing hydrogen gas, has been demonstrated to induce oxygen vacancy formation for enhanced photoactivity of the materials. Here, it is demonstrated that argon annealing (another prevalently used oxygen‐deficient gas) in the temperature range of 300–700 °C greatly affects the activity of dual‐faceted BiVO 4 microcrystals for photocatalytic O 2 generation and photocurrent generation. While treatment at 300 °C has little to no effect, higher temperatures of 500 and 700 °C significantly improve the crystallinity, alter the local structure distortion, and reduce the bandgap energy of the treated BiVO 4 . The higher temperature treatment also favors formation of new subgap states attributed to oxygen vacancies, as supported by surface photovoltage and electron paramagnetic resonance spectroscopies. Despite the most profound improvements in structural, optical, and electronic properties displayed by the 700 °C‐treated BiVO 4 , the sample annealed at 500 °C exhibits the highest photoactivity. The lower activity of the 700 °C‐treated BiVO 4 is ascribed to the creation of bismuth vacancies and the loss of well‐defined crystal facets, contributing to impeded electron transport and poor charge separation.
- Authors:
-
- Univ. of New South Wales, Sydney, NSW (Australia)
- Univ. of California, Davis, CA (United States)
- Publication Date:
- Research Org.:
- Univ. of California, Los Angeles, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1533215
- Alternate Identifier(s):
- OSTI ID: 1400598
- Grant/Contract Number:
- SC0001234
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Particle & Particle Systems Characterization
- Additional Journal Information:
- Journal Volume: 34; Journal Issue: 4; Journal ID: ISSN 0934-0866
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; chemistry; science & technology; materials science; bismuth vanadate; oxygen vacancies; photocatalysis; surface photovoltage spectroscopy; water splitting
Citation Formats
Tan, Hui Ling, Suyanto, Adrian, Denko, Alexandra De, Saputera, Wibawa H., Amal, Rose, Osterloh, Frank E., and Ng, Yun Hau. Enhancing the Photoactivity of Faceted BiVO4 via Annealing in Oxygen-Deficient Condition. United States: N. p., 2016.
Web. doi:10.1002/ppsc.201600290.
Tan, Hui Ling, Suyanto, Adrian, Denko, Alexandra De, Saputera, Wibawa H., Amal, Rose, Osterloh, Frank E., & Ng, Yun Hau. Enhancing the Photoactivity of Faceted BiVO4 via Annealing in Oxygen-Deficient Condition. United States. https://doi.org/10.1002/ppsc.201600290
Tan, Hui Ling, Suyanto, Adrian, Denko, Alexandra De, Saputera, Wibawa H., Amal, Rose, Osterloh, Frank E., and Ng, Yun Hau. Fri .
"Enhancing the Photoactivity of Faceted BiVO4 via Annealing in Oxygen-Deficient Condition". United States. https://doi.org/10.1002/ppsc.201600290. https://www.osti.gov/servlets/purl/1533215.
@article{osti_1533215,
title = {Enhancing the Photoactivity of Faceted BiVO4 via Annealing in Oxygen-Deficient Condition},
author = {Tan, Hui Ling and Suyanto, Adrian and Denko, Alexandra De and Saputera, Wibawa H. and Amal, Rose and Osterloh, Frank E. and Ng, Yun Hau},
abstractNote = {Thermal annealing of metal oxides in oxygen‐deficient atmosphere, particularly reducing hydrogen gas, has been demonstrated to induce oxygen vacancy formation for enhanced photoactivity of the materials. Here, it is demonstrated that argon annealing (another prevalently used oxygen‐deficient gas) in the temperature range of 300–700 °C greatly affects the activity of dual‐faceted BiVO 4 microcrystals for photocatalytic O 2 generation and photocurrent generation. While treatment at 300 °C has little to no effect, higher temperatures of 500 and 700 °C significantly improve the crystallinity, alter the local structure distortion, and reduce the bandgap energy of the treated BiVO 4 . The higher temperature treatment also favors formation of new subgap states attributed to oxygen vacancies, as supported by surface photovoltage and electron paramagnetic resonance spectroscopies. Despite the most profound improvements in structural, optical, and electronic properties displayed by the 700 °C‐treated BiVO 4 , the sample annealed at 500 °C exhibits the highest photoactivity. The lower activity of the 700 °C‐treated BiVO 4 is ascribed to the creation of bismuth vacancies and the loss of well‐defined crystal facets, contributing to impeded electron transport and poor charge separation.},
doi = {10.1002/ppsc.201600290},
journal = {Particle & Particle Systems Characterization},
number = 4,
volume = 34,
place = {United States},
year = {Fri Dec 23 00:00:00 EST 2016},
month = {Fri Dec 23 00:00:00 EST 2016}
}
Web of Science
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