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Title: Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers

Abstract

Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the optical transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. Furthermore, this work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1400435
Alternate Identifier(s):
OSTI ID: 1418090
Grant/Contract Number:  
AC02-76SF00515; W911NF1310309; FA9550-12-1-0488; ECS-9731293
Resource Type:
Published Article
Journal Name:
Optica
Additional Journal Information:
Journal Name: Optica Journal Volume: 4 Journal Issue: 11; Journal ID: ISSN 2334-2536
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Defect-center materials; Quantum optics; Coherent optical effects

Citation Formats

Zhang, Jingyuan Linda, Lagoudakis, Konstantinos G., Tzeng, Yan-Kai, Dory, Constantin, Radulaski, Marina, Kelaita, Yousif, Fischer, Kevin A., Sun, Shuo, Shen, Zhi-Xun, Melosh, Nicholas A., Chu, Steven, and Vučković, Jelena. Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers. United States: N. p., 2017. Web. doi:10.1364/OPTICA.4.001317.
Zhang, Jingyuan Linda, Lagoudakis, Konstantinos G., Tzeng, Yan-Kai, Dory, Constantin, Radulaski, Marina, Kelaita, Yousif, Fischer, Kevin A., Sun, Shuo, Shen, Zhi-Xun, Melosh, Nicholas A., Chu, Steven, & Vučković, Jelena. Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers. United States. doi:10.1364/OPTICA.4.001317.
Zhang, Jingyuan Linda, Lagoudakis, Konstantinos G., Tzeng, Yan-Kai, Dory, Constantin, Radulaski, Marina, Kelaita, Yousif, Fischer, Kevin A., Sun, Shuo, Shen, Zhi-Xun, Melosh, Nicholas A., Chu, Steven, and Vučković, Jelena. Mon . "Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers". United States. doi:10.1364/OPTICA.4.001317.
@article{osti_1400435,
title = {Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers},
author = {Zhang, Jingyuan Linda and Lagoudakis, Konstantinos G. and Tzeng, Yan-Kai and Dory, Constantin and Radulaski, Marina and Kelaita, Yousif and Fischer, Kevin A. and Sun, Shuo and Shen, Zhi-Xun and Melosh, Nicholas A. and Chu, Steven and Vučković, Jelena},
abstractNote = {Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the optical transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. Furthermore, this work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.},
doi = {10.1364/OPTICA.4.001317},
journal = {Optica},
number = 11,
volume = 4,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1364/OPTICA.4.001317

Citation Metrics:
Cited by: 6 works
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    Works referencing / citing this record:

    Optical coherence of implanted silicon vacancy centers in thin diamond membranes
    journal, January 2019