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Title: Transient current induced in thin film diamonds by swift heavy ions

Abstract

Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O5 + and 45 MeV Si7 +) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended. Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [2];  [2]; ORCiD logo [3];  [3];  [4];  [5]
+ Show Author Affiliations
  1. National Inst. for Quantum and Radiological Science and Technology (QST), Takasaki (Japan). Quantum Beam Science Research Directorate (QuBS)
  2. Gunma Univ. (Japan). Division of Electronics and Informatics
  3. Ruder Boskovic Inst. (RBI), Zagreb (Croatia). Division of Experimental Physics
  4. Alternative Energies and Atomic Energy Commission (CEA), Gif-sur-Yvette (France). Diamond Sensors Lab.
  5. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1399888
Alternate Identifier(s):
OSTI ID: 1420190
Report Number(s):
SAND2016-11010J
Journal ID: ISSN 0925-9635; 648758; TRN: US1702856
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Diamond and Related Materials
Additional Journal Information:
Journal Volume: 75; Journal Issue: C; Journal ID: ISSN 0925-9635
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; diamond crystal; radiation induced effects; detectors; membranes

Citation Formats

Sato, Shin-ichiro, Makino, Takahiro, Ohshima, Takeshi, Kamiya, Tomihiro, Kada, Wataru, Hanaizumi, Osamu, Grilj, Veljko, Skukan, Natko, Pomorski, Michal, and Vizkelethy, Gyorgy. Transient current induced in thin film diamonds by swift heavy ions. United States: N. p., 2017. Web. doi:10.1016/j.diamond.2017.04.005.
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Sato, Shin-ichiro, Makino, Takahiro, Ohshima, Takeshi, Kamiya, Tomihiro, Kada, Wataru, Hanaizumi, Osamu, Grilj, Veljko, Skukan, Natko, Pomorski, Michal, & Vizkelethy, Gyorgy. Transient current induced in thin film diamonds by swift heavy ions. United States. https://doi.org/10.1016/j.diamond.2017.04.005
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Sato, Shin-ichiro, Makino, Takahiro, Ohshima, Takeshi, Kamiya, Tomihiro, Kada, Wataru, Hanaizumi, Osamu, Grilj, Veljko, Skukan, Natko, Pomorski, Michal, and Vizkelethy, Gyorgy. Wed . "Transient current induced in thin film diamonds by swift heavy ions". United States. https://doi.org/10.1016/j.diamond.2017.04.005. https://www.osti.gov/servlets/purl/1399888.
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@article{osti_1399888,
title = {Transient current induced in thin film diamonds by swift heavy ions},
author = {Sato, Shin-ichiro and Makino, Takahiro and Ohshima, Takeshi and Kamiya, Tomihiro and Kada, Wataru and Hanaizumi, Osamu and Grilj, Veljko and Skukan, Natko and Pomorski, Michal and Vizkelethy, Gyorgy},
abstractNote = {Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O5 + and 45 MeV Si7 +) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended. Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.},
doi = {10.1016/j.diamond.2017.04.005},
journal = {Diamond and Related Materials},
number = C,
volume = 75,
place = {United States},
year = {Wed Apr 05 00:00:00 EDT 2017},
month = {Wed Apr 05 00:00:00 EDT 2017}
}
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https://doi.org/10.1016/j.diamond.2017.04.005
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    Works referencing / citing this record:

    Diamond photovoltaic radiation sensor using pn junction
    journal, August 2018

    • Shimaoka, Takehiro; Koizumi, Satoshi; Tanaka, Manobu M.
    • Applied Physics Letters, Vol. 113, Issue 9
    • DOI: 10.1063/1.5034413

    Electronic Properties of a Synthetic Single-Crystal Diamond Exposed to High Temperature and High Radiation
    journal, May 2020

    • Crnjac, Andreo; Skukan, Natko; Provatas, Georgios
    • Materials, Vol. 13, Issue 11
    • DOI: 10.3390/ma13112473
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