Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1397659
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Microelectronic Engineering
- Additional Journal Information:
- Journal Name: Microelectronic Engineering Journal Volume: 178 Journal Issue: C; Journal ID: ISSN 0167-9317
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, and Shluger, Alexander L. Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging. Netherlands: N. p., 2017.
Web. doi:10.1016/j.mee.2017.05.012.
Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, & Shluger, Alexander L. Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging. Netherlands. https://doi.org/10.1016/j.mee.2017.05.012
Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, and Shluger, Alexander L. Thu .
"Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging". Netherlands. https://doi.org/10.1016/j.mee.2017.05.012.
@article{osti_1397659,
title = {Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging},
author = {Strand, Jack and Dicks, Oliver A. and Kaviani, Moloud and Shluger, Alexander L.},
abstractNote = {},
doi = {10.1016/j.mee.2017.05.012},
journal = {Microelectronic Engineering},
number = C,
volume = 178,
place = {Netherlands},
year = {Thu Jun 01 00:00:00 EDT 2017},
month = {Thu Jun 01 00:00:00 EDT 2017}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.mee.2017.05.012
https://doi.org/10.1016/j.mee.2017.05.012
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Cited by: 11 works
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