Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging
Journal Article
·
· Microelectronic Engineering
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1397659
- Journal Information:
- Microelectronic Engineering, Journal Name: Microelectronic Engineering Vol. 178 Journal Issue: C; ISSN 0167-9317
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- Netherlands
- Language:
- English
Cited by: 14 works
Citation information provided by
Web of Science
Web of Science
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