Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

Yang, Yu; Guo, Jianqiu; Goue, Ouloide; Raghothamachar, Balaji; Dudley, Michael; Chung, Gil; Sanchez, Edward; Quast, Jeff; Manning, Ian; Hansen, Darren

doi:10.1016/j.jcrysgro.2016.01.013

Title: Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

Authors:

; Guo, Jianqiu; Goue, Ouloide; Raghothamachar, Balaji; Dudley, Michael; Chung, Gil; Sanchez, Edward; Quast, Jeff; Manning, Ian; Hansen, Darren

Publication Date:: Sat Oct 01 00:00:00 EDT 2016

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1396704

Grant/Contract Number:: AC02-06CH11357; AC02-05CH11231; AC02-98CH10886

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Crystal Growth

Additional Journal Information:: Journal Name: Journal of Crystal Growth Journal Volume: 452 Journal Issue: C; Journal ID: ISSN 0022-0248

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, and Hansen, Darren. Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers.  Netherlands: N. p., 2016. 
Web.  doi:10.1016/j.jcrysgro.2016.01.013.

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                    Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, & Hansen, Darren. Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers.  Netherlands.  https://doi.org/10.1016/j.jcrysgro.2016.01.013

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                    Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, and Hansen, Darren. Sat .  
"Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers".  Netherlands.  https://doi.org/10.1016/j.jcrysgro.2016.01.013.

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@article{osti_1396704,

  title        = {Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers},

  author       = {Yang, Yu and Guo, Jianqiu and Goue, Ouloide and Raghothamachar, Balaji and Dudley, Michael and Chung, Gil and Sanchez, Edward and Quast, Jeff and Manning, Ian and Hansen, Darren},

  abstractNote = {},

  doi          = {10.1016/j.jcrysgro.2016.01.013},

  journal      = {Journal of Crystal Growth},

  number       = C,

  volume       = 452,

  place        = {Netherlands},

  year         = {Sat Oct 01 00:00:00 EDT 2016},

  month        = {Sat Oct 01 00:00:00 EDT 2016}

}

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Journal Article:

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https://doi.org/10.1016/j.jcrysgro.2016.01.013

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