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Title: Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

Authors:
ORCiD logo; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1396704
Grant/Contract Number:  
AC02-06CH11357; AC02-05CH11231; AC02-98CH10886
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Name: Journal of Crystal Growth Journal Volume: 452 Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, and Hansen, Darren. Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers. Netherlands: N. p., 2016. Web. doi:10.1016/j.jcrysgro.2016.01.013.
Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, & Hansen, Darren. Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers. Netherlands. doi:10.1016/j.jcrysgro.2016.01.013.
Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, and Hansen, Darren. Sat . "Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers". Netherlands. doi:10.1016/j.jcrysgro.2016.01.013.
@article{osti_1396704,
title = {Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers},
author = {Yang, Yu and Guo, Jianqiu and Goue, Ouloide and Raghothamachar, Balaji and Dudley, Michael and Chung, Gil and Sanchez, Edward and Quast, Jeff and Manning, Ian and Hansen, Darren},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2016.01.013},
journal = {Journal of Crystal Growth},
number = C,
volume = 452,
place = {Netherlands},
year = {2016},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.jcrysgro.2016.01.013

Citation Metrics:
Cited by: 3 works
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