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Title: Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

Authors:
ORCiD logo ; ; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
AC02-06CH11357; AC02-05CH11231; AC02-98CH10886
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 452; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-10-04 15:18:14; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1396704