Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN
Abstract
AlxGa1-xN is characterized by a significant spontaneous and piezoelectric polarization, which increases with the aluminum content. As a result, a surface bound charge is present, which favors compensation by surface states and influences the reliability of AlGaN/GaN devices. This work, therefore, focused on the effects of the polarization charge for GaN and AlGaN with three different aluminum concentrations 15%, 25%, and 35%. The band bending of AlxGa1-xN surfaces was measured after a N2/H2 plasma pretreatment, which reduced the carbon and oxygen contamination below the detection limit of x-ray photoelectron spectroscopy. Surface band bending was then related to surface states, where the band bending of oxygen-free surfaces—as obtained with a high-temperature, immersed hydrogen/nitrogen plasma clean—scales with the aluminum content. In addition, the band offsets at the plasma-enhanced atomic layer deposited SiO2/AlxGa1-xN interface were measured, giving 3.4 eV, 3.3 eV, 3.3 eV, and 3.0 eV for respective 0%, 15%, 25%, and 35% aluminum concentrations. These values are in accordance with the charge neutrality level model, which implies that SiO2 will confine carriers over nearly the full range of the aluminum content.
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1395588
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 122 Journal Issue: 12; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Eller, Brianna S., and Nemanich, Robert J. Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN. United States: N. p., 2017.
Web. doi:10.1063/1.5003921.
Eller, Brianna S., & Nemanich, Robert J. Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN. United States. https://doi.org/10.1063/1.5003921
Eller, Brianna S., and Nemanich, Robert J. Fri .
"Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN". United States. https://doi.org/10.1063/1.5003921.
@article{osti_1395588,
title = {Surface band bending and interface alignment of plasma-enhanced atomic layer deposited SiO2 on AlxGa1-xN},
author = {Eller, Brianna S. and Nemanich, Robert J.},
abstractNote = {AlxGa1-xN is characterized by a significant spontaneous and piezoelectric polarization, which increases with the aluminum content. As a result, a surface bound charge is present, which favors compensation by surface states and influences the reliability of AlGaN/GaN devices. This work, therefore, focused on the effects of the polarization charge for GaN and AlGaN with three different aluminum concentrations 15%, 25%, and 35%. The band bending of AlxGa1-xN surfaces was measured after a N2/H2 plasma pretreatment, which reduced the carbon and oxygen contamination below the detection limit of x-ray photoelectron spectroscopy. Surface band bending was then related to surface states, where the band bending of oxygen-free surfaces—as obtained with a high-temperature, immersed hydrogen/nitrogen plasma clean—scales with the aluminum content. In addition, the band offsets at the plasma-enhanced atomic layer deposited SiO2/AlxGa1-xN interface were measured, giving 3.4 eV, 3.3 eV, 3.3 eV, and 3.0 eV for respective 0%, 15%, 25%, and 35% aluminum concentrations. These values are in accordance with the charge neutrality level model, which implies that SiO2 will confine carriers over nearly the full range of the aluminum content.},
doi = {10.1063/1.5003921},
journal = {Journal of Applied Physics},
number = 12,
volume = 122,
place = {United States},
year = {Fri Sep 29 00:00:00 EDT 2017},
month = {Fri Sep 29 00:00:00 EDT 2017}
}
https://doi.org/10.1063/1.5003921
Web of Science
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