Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

Chen, Yabin; Ke, Feng; Ci, Penghong; Ko, Changhyun; Park, Taegyun; Saremi, Sahar; Liu, Huili; Lee, Yeonbae; Suh, Joonki; Martin, Lane W.; Ager, Joel W.; Chen, Bin; Wu, Junqiao

doi:10.1021/acs.nanolett.6b03785

Title: Pressurizing Field-Effect Transistors of Few-Layer MoS₂ in a Diamond Anvil Cell

Abstract

Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. In this paper, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS₂ and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS₂ can all be significantly enhanced with pressure. Finally, we expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.

Authors:

Chen, Yabin ^[1]; Ke, Feng ^[2]; Ci, Penghong ^[1]; Ko, Changhyun ^[1];

^[1]; Saremi, Sahar ^[1]; Liu, Huili ^[3]; Lee, Yeonbae ^[4]; Suh, Joonki ^[1]; Martin, Lane W. ^[1]; Ager, Joel W. ^[3]; Chen, Bin ^[2];

^[3]

Univ. of California, Berkeley, CA (United States)
Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:: Thu Dec 08 00:00:00 EST 2016

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Army Research Office (ARO)

OSTI Identifier:: 1393110

Grant/Contract Number:: AC02-05CH11231; DMR-1306601; CMMI-1434147; EAR 11- 57758; W911NF-14-1-0104

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 17; Journal Issue: 1; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; diamond anvil cell; field-effect transistor; h-BN dielectric; hydrostatic pressure; MoS2

Citation Formats


                    Chen, Yabin, Ke, Feng, Ci, Penghong, Ko, Changhyun, Park, Taegyun, Saremi, Sahar, Liu, Huili, Lee, Yeonbae, Suh, Joonki, Martin, Lane W., Ager, Joel W., Chen, Bin, and Wu, Junqiao. Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell.  United States: N. p., 2016. 
Web.  doi:10.1021/acs.nanolett.6b03785.

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                    Chen, Yabin, Ke, Feng, Ci, Penghong, Ko, Changhyun, Park, Taegyun, Saremi, Sahar, Liu, Huili, Lee, Yeonbae, Suh, Joonki, Martin, Lane W., Ager, Joel W., Chen, Bin, & Wu, Junqiao. Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell.  United States.  https://doi.org/10.1021/acs.nanolett.6b03785

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                    Chen, Yabin, Ke, Feng, Ci, Penghong, Ko, Changhyun, Park, Taegyun, Saremi, Sahar, Liu, Huili, Lee, Yeonbae, Suh, Joonki, Martin, Lane W., Ager, Joel W., Chen, Bin, and Wu, Junqiao. Thu .  
"Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell".  United States.  https://doi.org/10.1021/acs.nanolett.6b03785.  https://www.osti.gov/servlets/purl/1393110.

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@article{osti_1393110,

  title        = {Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell},

  author       = {Chen, Yabin and Ke, Feng and Ci, Penghong and Ko, Changhyun and Park, Taegyun and Saremi, Sahar and Liu, Huili and Lee, Yeonbae and Suh, Joonki and Martin, Lane W. and Ager, Joel W. and Chen, Bin and Wu, Junqiao},

  abstractNote = {Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. In this paper, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS2 and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS2 can all be significantly enhanced with pressure. Finally, we expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.},

  doi          = {10.1021/acs.nanolett.6b03785},

  journal      = {Nano Letters},

  number       = 1,

  volume       = 17,

  place        = {United States},

  year         = {Thu Dec 08 00:00:00 EST 2016},

  month        = {Thu Dec 08 00:00:00 EST 2016}

}

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Title: Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

Abstract

Citation Formats

Physical and chemical tuning of two-dimensional transition metal dichalcogenides journal, January 2015

Black phosphorus field-effect transistors journal, March 2014

Pressure-induced structural transition of CdxZn1−xO alloys journal, April 2016

Monolayer excitonic laser journal, October 2015

Bandgap Engineering of Strained Monolayer and Bilayer MoS2 journal, July 2013

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides journal, March 2016

Gate-induced superconductivity in atomically thin MoS2 crystals journal, January 2016

Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide journal, November 2015

Gate-tunable phase transitions in thin flakes of 1T-TaS2 journal, January 2015

Conventional superconductivity at 203 kelvin at high pressures in the sulfur hydride system journal, August 2015

Evidence for a new phase of dense hydrogen above 325 gigapascals journal, January 2016

Vibrational spectrum renormalization by enforced coupling across the van der Waals gap between Mo S 2 and W S 2 monolayers journal, December 2015

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide journal, May 2014

Pressure-Induced Metallization of Molybdenum Disulfide journal, July 2014

Pressure-Modulated Conductivity, Carrier Density, and Mobility of Multilayered Tungsten Disulfide journal, August 2015

Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement journal, February 2005

In situ Hall effect measurement on diamond anvil cell under high pressure journal, November 2010

High-pressure resistivity technique for quasi-hydrostatic compression experiments journal, June 2013

A cubic boron nitride gasket for diamond-anvil experiments journal, May 2008

From Bulk to Monolayer MoS2: Evolution of Raman Scattering journal, January 2012

Comparative high pressure Raman study of boron nitride nanotubes and hexagonal boron nitride journal, April 2006

Single-layer MoS2 transistors journal, January 2011

Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities journal, July 2014

Hysteresis in Single-Layer MoS 2 Field Effect Transistors journal, May 2012

Boron Nitride–Graphene Nanocapacitor and the Origins of Anomalous Size-Dependent Increase of Capacitance journal, March 2014

Isothermal compression of hexagonal graphite-like boron nitride up to 12 GPa journal, October 1995

Pressure dependence of the optical-absorption edge of AlN and graphite-type BN journal, May 2002

Energy gap–refractive index relations in semiconductors – An overview journal, March 2007

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Probing Spin–Orbit Coupling and Interlayer Coupling in Atomically Thin Molybdenum Disulfide Using Hydrostatic Pressure journal, December 2015

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Title: Pressurizing Field-Effect Transistors of Few-Layer MoS₂ in a Diamond Anvil Cell

Physical and chemical tuning of two-dimensional transition metal dichalcogenides
journal, January 2015

Black phosphorus field-effect transistors
journal, March 2014

Pressure-induced structural transition of CdxZn1−xO alloys
journal, April 2016

Monolayer excitonic laser
journal, October 2015

Bandgap Engineering of Strained Monolayer and Bilayer MoS₂
journal, July 2013

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
journal, March 2016

Gate-induced superconductivity in atomically thin MoS2 crystals
journal, January 2016

Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide
journal, November 2015

Gate-tunable phase transitions in thin flakes of 1T-TaS2
journal, January 2015

Conventional superconductivity at 203 kelvin at high pressures in the sulfur hydride system
journal, August 2015

Evidence for a new phase of dense hydrogen above 325 gigapascals
journal, January 2016

Vibrational spectrum renormalization by enforced coupling across the van der Waals gap between $Mo S_{2}$ and $W S_{2}$ monolayers
journal, December 2015

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
journal, May 2014

Pressure-Induced Metallization of Molybdenum Disulfide
journal, July 2014

Pressure-Modulated Conductivity, Carrier Density, and Mobility of Multilayered Tungsten Disulfide
journal, August 2015

Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement
journal, February 2005

In situ Hall effect measurement on diamond anvil cell under high pressure
journal, November 2010

High-pressure resistivity technique for quasi-hydrostatic compression experiments
journal, June 2013

A cubic boron nitride gasket for diamond-anvil experiments
journal, May 2008

From Bulk to Monolayer MoS2: Evolution of Raman Scattering
journal, January 2012

Comparative high pressure Raman study of boron nitride nanotubes and hexagonal boron nitride
journal, April 2006

Single-layer MoS₂ transistors
journal, January 2011

Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities
journal, July 2014

Hysteresis in Single-Layer MoS ₂ Field Effect Transistors
journal, May 2012

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journal, March 2014

Isothermal compression of hexagonal graphite-like boron nitride up to 12 GPa
journal, October 1995

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journal, May 2002

Energy gap–refractive index relations in semiconductors – An overview
journal, March 2007

High Performance Multilayer MoS₂Transistors with Scandium Contacts
journal, December 2012

Probing Spin–Orbit Coupling and Interlayer Coupling in Atomically Thin Molybdenum Disulfide Using Hydrostatic Pressure
journal, December 2015

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journal, January 2013

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journal, June 2007

The ruby pressure standard to 150GPa
journal, December 2005