Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers
Abstract
Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devices showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.
- Authors:
-
- State Univ. of New York (SUNY), Stony Brook, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1389247
- Report Number(s):
- BNL-114266-2017-JA
Journal ID: ISSN 1077-260X; KC0403020; TRN: US1702228
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- IEEE Journal of Selected Topics in Quantum Electronics
- Additional Journal Information:
- Journal Volume: 23; Journal Issue: 6; Journal ID: ISSN 1077-260X
- Publisher:
- IEEE Lasers and Electro-optics Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; GaSBl type-1 QW; midinfrared; semiconductor lasers; cascade lasers; high power; narrow ridge; DFB
Citation Formats
Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Liang, Rui, Feng, Tao, Wang, Meng, Stein, Aaron, and Belenky, Gregory. Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers. United States: N. p., 2017.
Web. doi:10.1109/JSTQE.2017.2687763.
Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Liang, Rui, Feng, Tao, Wang, Meng, Stein, Aaron, & Belenky, Gregory. Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers. United States. https://doi.org/10.1109/JSTQE.2017.2687763
Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Liang, Rui, Feng, Tao, Wang, Meng, Stein, Aaron, and Belenky, Gregory. Fri .
"Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers". United States. https://doi.org/10.1109/JSTQE.2017.2687763. https://www.osti.gov/servlets/purl/1389247.
@article{osti_1389247,
title = {Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers},
author = {Shterengas, Leon and Kipshidze, Gela and Hosoda, Takashi and Liang, Rui and Feng, Tao and Wang, Meng and Stein, Aaron and Belenky, Gregory},
abstractNote = {Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devices showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.},
doi = {10.1109/JSTQE.2017.2687763},
journal = {IEEE Journal of Selected Topics in Quantum Electronics},
number = 6,
volume = 23,
place = {United States},
year = {Fri Mar 24 00:00:00 EDT 2017},
month = {Fri Mar 24 00:00:00 EDT 2017}
}
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Works referencing / citing this record:
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- APL Photonics, Vol. 4, Issue 11
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- Journal of Physics D: Applied Physics, Vol. 51, Issue 5
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- Rassel, S. M. Shazzad; Li, Lu; Li, Yiyun
- Optical Engineering, Vol. 57, Issue 01, p. 1
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- Wang, Meng; Hosoda, Takashi; Jiang, Jiang
- Optics Letters, Vol. 43, Issue 18