Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

Journal Article · Fri Mar 24 00:00:00 EDT 2017 · IEEE Journal of Selected Topics in Quantum Electronics

DOI: https://doi.org/10.1109/JSTQE.2017.2687763 · OSTI ID:1389247

Shterengas, Leon ^[1]; Kipshidze, Gela ^[1]; Hosoda, Takashi ^[1]; Liang, Rui ^[1]; Feng, Tao ^[1]; Wang, Meng ^[1]; Stein, Aaron ^[2]; Belenky, Gregory ^[1]

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1. State Univ. of New York (SUNY), Stony Brook, NY (United States)
2. Brookhaven National Lab. (BNL), Upton, NY (United States)

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devices showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: SC0012704
• OSTI ID: 1389247
• Report Number(s): BNL--114266-2017-JA; KC0403020
• Journal Information: IEEE Journal of Selected Topics in Quantum Electronics, Journal Name: IEEE Journal of Selected Topics in Quantum Electronics Journal Issue: 6 Vol. 23; ISSN 1077-260X
• Publisher: IEEE Lasers and Electro-optics SocietyCopyright Statement
• Country of Publication: United States
• Language: English