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Title: Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devices showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.
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  1. State Univ. of New York (SUNY), Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 1077-260X; KC0403020; TRN: US1702228
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Journal of Selected Topics in Quantum Electronics
Additional Journal Information:
Journal Volume: 23; Journal Issue: 6; Journal ID: ISSN 1077-260X
IEEE Lasers and Electro-optics Society
Research Org:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
77 NANOSCIENCE AND NANOTECHNOLOGY; GaSBl type-1 QW; midinfrared; semiconductor lasers; cascade lasers; high power; narrow ridge; DFB
OSTI Identifier: