Electron-beam-induced-current and active secondary-electron voltage-contrast with aberration-corrected electron probes

Han, Myung-Geun; Garlow, Joseph A.; Marshall, Matthew S. J.; Tiano, Amanda L.; Wong, Stanislaus S.; Cheong, Sang-Wook; Walker, Frederick J.; Ahn, Charles H.; Zhu, Yimei

doi:10.1016/j.ultramic.2017.03.028

Title: Electron-beam-induced-current and active secondary-electron voltage-contrast with aberration-corrected electron probes

Journal Article · 23 March 2017 · Ultramicroscopy

DOI: https://doi.org/10.1016/j.ultramic.2017.03.028 · OSTI ID:1389237

Han, Myung-Geun ^[1]; Garlow, Joseph A. ^[2]; Marshall, Matthew S. J. ^[3]; Tiano, Amanda L. ^[3]; Wong, Stanislaus S. ^[2]; Cheong, Sang-Wook ^[4]; Walker, Frederick J. ^[5]; Ahn, Charles H. ^[5]; Zhu, Yimei ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
Stony Brook Univ., NY (United States)
Rutgers Univ., Piscataway, NJ (United States)
Yale Univ., New Haven, CT (United States)

The ability to map out electrostatic potentials in materials is critical for the development and the design of nanoscale electronic and spintronic devices in modern industry. Electron holography has been an important tool for revealing electric and magnetic field distributions in microelectronics and magnetic-based memory devices, however, its utility is hindered by several practical constraints, such as charging artifacts and limitations in sensitivity and in field of view. In this article, we report electron-beam-induced-current (EBIC) and secondary-electron voltage-contrast (SE-VC) with an aberration-corrected electron probe in a transmission electron microscope (TEM), as complementary techniques to electron holography, to measure electric fields and surface potentials, respectively. These two techniques were applied to ferroelectric thin films, multiferroic nanowires, and single crystals. Electrostatic potential maps obtained by off-axis electron holography were compared with EBIC and SE-VC to show that these techniques can be used as a complementary approach to validate quantitative results obtained from electron holography analysis.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704; DESC0012704

OSTI ID:: 1389237

Alternate ID(s):: OSTI ID: 1416657

Report Number(s):: BNL-114213-2017-JA; R&D Project: MA015MACA; KC0201010

Journal Information:: Ultramicroscopy, Vol. 176, Issue C; ISSN 0304-3991

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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References (15)

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Multiple contacts investigation of single silicon nanowires with the active voltage contrast scanning electron microscopy technique Verma, Akshara; Connaughton, Stephen; Stamenov, Plamen Measurement Science and Technology, Vol. 30, Issue 1 https://doi.org/10.1088/1361-6501/aaeab8	journal	December 2018

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