High-pressure phase transition makes B 4.3 C boron carbide a wide-gap semiconductor

Hushur, Anwar; Manghnani, Murli H.; Werheit, Helmut; Dera, Przemyslaw; Williams, Quentin

doi:10.1088/0953-8984/28/4/045403

Title: High-pressure phase transition makes B _4.3 C boron carbide a wide-gap semiconductor

Journal Article · Sun Jan 10 23:00:00 EST 2016 · Journal of Physics. Condensed Matter

DOI: https://doi.org/10.1088/0953-8984/28/4/045403 · OSTI ID:1379177

Hushur, Anwar ^[1]; Manghnani, Murli H. ^[2]; Werheit, Helmut ^[3]; Dera, Przemyslaw ^[2]; Williams, Quentin ^[4]

Xinjiang Univ. (China). Dept. of Physical Science and Technology; Univ. of Hawaii, Honolulu, HI (United States). Hawaii Inst. of Geophysics and Planteology; Carnegie Institution of Washington
Univ. of Hawaii, Honolulu, HI (United States). Hawaii Inst. of Geophysics and Planteology
Univ. of Duisburg (Germany). Experimental Physics
Univ. of California, Santa Cruz, CA (United States). Dept. of Earth and Planetary Sciences

Single-crystal B4.3C boron carbide is investigated concerning the pressure-dependence of optical properties and of Raman-active phonons up to ~70 GPa. The high concentration of structural defects determining the electronic properties of boron carbide at ambient conditions initially decrease and finally vanish with pressure increasing. We obtain this immediately from transparency photos, allowing to estimate the pressure-dependent variation of the absorption edge rapidly increasing around 55 GPa. Glass-like transparency at pressures exceeding 60 GPa indicate that the width of the band exceeds ~3.1 eV thus making boron carbide a wide-gap semiconductor. Furthermore, the spectra of Raman–active phonons indicate a pressure-dependent phase transition in single-crystal natB4.3C boron carbide near 35 GPa., particularly related to structural changes in connection with the C-B-C chains, while the basic icosahedral structure remains largely unaffected.

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Research Organization:: Carnegie Inst. of Washington, Argonne, IL (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: NA0002006

OSTI ID:: 1379177

Journal Information:: Journal of Physics. Condensed Matter, Journal Name: Journal of Physics. Condensed Matter Journal Issue: 4 Vol. 28; ISSN 0953-8984

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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