Opto-valleytronic imaging of atomically thin semiconductors

Neumann, Andre; Lindlau, Jessica; Colombier, Léo; Nutz, Manuel; Najmaei, Sina; Lou, Jun; Mohite, Aditya D.; Yamaguchi, Hisato; Högele, Alexander

doi:10.1038/nnano.2016.282

Title: Opto-valleytronic imaging of atomically thin semiconductors

Journal Article · Sun Jan 15 23:00:00 EST 2017 · Nature Nanotechnology

DOI: https://doi.org/10.1038/nnano.2016.282 · OSTI ID:1375888

Neumann, Andre ^[1]; Lindlau, Jessica ^[1]; Colombier, Léo ^[1]; Nutz, Manuel ^[1];

^[2]; Lou, Jun ^[2]; Mohite, Aditya D. ^[3]; Yamaguchi, Hisato ^[3]; Högele, Alexander ^[1]

Ludwig Maximilian Univ., Munchen (Germany)
Rice Univ., Houston, TX (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular motion and associated valley polarization and valley coherence as key elements of opto-valleytronic functionality. Here, we introduce two-dimensional polarimetry as means of direct imaging of the valley pseudospin degree of freedom in monolayer transition metal dichalcogenides. Using MoS₂ as a representative material with valley-selective optical transitions, we establish quantitative image analysis for polarimetric maps of extended crystals, and identify valley polarization and valley coherence as sensitive probes of crystalline disorder. Moreover, we find site-dependent thermal and non-thermal regimes of valley-polarized excitons in perpendicular magnetic fields. Finally, we demonstrate the potential of widefield polarimetry for rapid inspection of opto-valleytronic devices based on atomically thin semiconductors and heterostructures.

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Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1375888

Report Number(s):: LA--UR-17-25599

Journal Information:: Nature Nanotechnology, Journal Name: Nature Nanotechnology Journal Issue: 4 Vol. 12; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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