Opto-valleytronic imaging of atomically thin semiconductors
Abstract
Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular motion and associated valley polarization and valley coherence as key elements of opto-valleytronic functionality. Here, we introduce two-dimensional polarimetry as means of direct imaging of the valley pseudospin degree of freedom in monolayer transition metal dichalcogenides. Using MoS2 as a representative material with valley-selective optical transitions, we establish quantitative image analysis for polarimetric maps of extended crystals, and identify valley polarization and valley coherence as sensitive probes of crystalline disorder. Moreover, we find site-dependent thermal and non-thermal regimes of valley-polarized excitons in perpendicular magnetic fields. Finally, we demonstrate the potential of widefield polarimetry for rapid inspection of opto-valleytronic devices based on atomically thin semiconductors and heterostructures.
- Authors:
-
[2];
- Ludwig Maximilian Univ., Munchen (Germany)
- Rice Univ., Houston, TX (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1375888
- Report Number(s):
- LA-UR-17-25599
Journal ID: ISSN 1748-3387; TRN: US1702562
- Grant/Contract Number:
- AC52-06NA25396
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Nanotechnology
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 4; Journal ID: ISSN 1748-3387
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; Imaging techniques; Two-dimensional materials
Citation Formats
Neumann, Andre, Lindlau, Jessica, Colombier, Léo, Nutz, Manuel, Najmaei, Sina, Lou, Jun, Mohite, Aditya D., Yamaguchi, Hisato, and Högele, Alexander. Opto-valleytronic imaging of atomically thin semiconductors. United States: N. p., 2017.
Web. doi:10.1038/nnano.2016.282.
Neumann, Andre, Lindlau, Jessica, Colombier, Léo, Nutz, Manuel, Najmaei, Sina, Lou, Jun, Mohite, Aditya D., Yamaguchi, Hisato, & Högele, Alexander. Opto-valleytronic imaging of atomically thin semiconductors. United States. https://doi.org/10.1038/nnano.2016.282
Neumann, Andre, Lindlau, Jessica, Colombier, Léo, Nutz, Manuel, Najmaei, Sina, Lou, Jun, Mohite, Aditya D., Yamaguchi, Hisato, and Högele, Alexander. Mon .
"Opto-valleytronic imaging of atomically thin semiconductors". United States. https://doi.org/10.1038/nnano.2016.282. https://www.osti.gov/servlets/purl/1375888.
@article{osti_1375888,
title = {Opto-valleytronic imaging of atomically thin semiconductors},
author = {Neumann, Andre and Lindlau, Jessica and Colombier, Léo and Nutz, Manuel and Najmaei, Sina and Lou, Jun and Mohite, Aditya D. and Yamaguchi, Hisato and Högele, Alexander},
abstractNote = {Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular motion and associated valley polarization and valley coherence as key elements of opto-valleytronic functionality. Here, we introduce two-dimensional polarimetry as means of direct imaging of the valley pseudospin degree of freedom in monolayer transition metal dichalcogenides. Using MoS2 as a representative material with valley-selective optical transitions, we establish quantitative image analysis for polarimetric maps of extended crystals, and identify valley polarization and valley coherence as sensitive probes of crystalline disorder. Moreover, we find site-dependent thermal and non-thermal regimes of valley-polarized excitons in perpendicular magnetic fields. Finally, we demonstrate the potential of widefield polarimetry for rapid inspection of opto-valleytronic devices based on atomically thin semiconductors and heterostructures.},
doi = {10.1038/nnano.2016.282},
journal = {Nature Nanotechnology},
number = 4,
volume = 12,
place = {United States},
year = {2017},
month = {1}
}
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