skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1375543
Grant/Contract Number:  
AC04-94AL85000; FG02-06ER46281
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Name: Physical Review Applied Journal Volume: 8 Journal Issue: 2; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Davidović, D., Ying, H., Dark, J., Wier, B. R., Ge, L., Lourenco, N. E., Omprakash, A. P., Mourigal, M., and Cressler, J. D. Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures. United States: N. p., 2017. Web. doi:10.1103/PhysRevApplied.8.024015.
Davidović, D., Ying, H., Dark, J., Wier, B. R., Ge, L., Lourenco, N. E., Omprakash, A. P., Mourigal, M., & Cressler, J. D. Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures. United States. doi:10.1103/PhysRevApplied.8.024015.
Davidović, D., Ying, H., Dark, J., Wier, B. R., Ge, L., Lourenco, N. E., Omprakash, A. P., Mourigal, M., and Cressler, J. D. Fri . "Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures". United States. doi:10.1103/PhysRevApplied.8.024015.
@article{osti_1375543,
title = {Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures},
author = {Davidović, D. and Ying, H. and Dark, J. and Wier, B. R. and Ge, L. and Lourenco, N. E. and Omprakash, A. P. and Mourigal, M. and Cressler, J. D.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.8.024015},
journal = {Physical Review Applied},
number = 2,
volume = 8,
place = {United States},
year = {2017},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevApplied.8.024015

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Single dopants in semiconductors
journal, January 2011

  • Koenraad, Paul M.; Flatté, Michael E.
  • Nature Materials, Vol. 10, Issue 2
  • DOI: 10.1038/nmat2940

Amplification and squeezing of quantum noise with a tunable Josephson metamaterial
journal, October 2008

  • Castellanos-Beltran, M. A.; Irwin, K. D.; Hilton, G. C.
  • Nature Physics, Vol. 4, Issue 12
  • DOI: 10.1038/nphys1090

Frequency Dependence of Shot Noise in a Diffusive Mesoscopic Conductor
journal, April 1997


Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004
journal, September 2005


System for measuring auto- and cross correlation of current noise at low temperatures
journal, July 2006

  • DiCarlo, L.; Zhang, Y.; McClure, D. T.
  • Review of Scientific Instruments, Vol. 77, Issue 7
  • DOI: 10.1063/1.2221541

Threshold energy effect on avalanche breakdown voltage in semiconductor junctions
journal, February 1975


Evidence for non-equilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures
journal, June 1996


Broadband single‐electron tunneling transistor
journal, April 1996

  • Visscher, E. H.; Lindeman, J.; Verbrugh, S. M.
  • Applied Physics Letters, Vol. 68, Issue 14
  • DOI: 10.1063/1.115622

Single-shot readout of an electron spin in silicon
journal, September 2010

  • Morello, Andrea; Pla, Jarryd J.; Zwanenburg, Floris A.
  • Nature, Vol. 467, Issue 7316
  • DOI: 10.1038/nature09392

Bidirectional Counting of Single Electrons
journal, June 2006


Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
journal, October 1978

  • Dingle, R.; Störmer, H. L.; Gossard, A. C.
  • Applied Physics Letters, Vol. 33, Issue 7
  • DOI: 10.1063/1.90457

A single-atom transistor
journal, February 2012

  • Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta
  • Nature Nanotechnology, Vol. 7, Issue 4
  • DOI: 10.1038/nnano.2012.21

Sideband cooling of micromechanical motion to the quantum ground state
journal, July 2011


Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime
journal, June 1995

  • Joseph, A. J.; Cressler, J. D.; Richey, D. M.
  • IEEE Electron Device Letters, Vol. 16, Issue 6
  • DOI: 10.1109/55.790731

Design of Cryogenic SiGe Low-Noise Amplifiers
journal, November 2007

  • Weinreb, Sander; Bardin, Joseph C.; Mani, Hamdi
  • IEEE Transactions on Microwave Theory and Techniques, Vol. 55, Issue 11
  • DOI: 10.1109/TMTT.2007.907729

A unified mobility model for device simulation—I. Model equations and concentration dependence
journal, July 1992


Flux-driven Josephson parametric amplifier
journal, July 2008

  • Yamamoto, T.; Inomata, K.; Watanabe, M.
  • Applied Physics Letters, Vol. 93, Issue 4
  • DOI: 10.1063/1.2964182

A single-photon detector in the far-infrared range
journal, January 2000

  • Komiyama, S.; Astafiev, O.; Antonov, V.
  • Nature, Vol. 403, Issue 6768
  • DOI: 10.1038/35000166

Charge and Spin State Readout of a Double Quantum Dot Coupled to a Resonator
journal, August 2010

  • Petersson, K. D.; Smith, C. G.; Anderson, D.
  • Nano Letters, Vol. 10, Issue 8
  • DOI: 10.1021/nl100663w

Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures
journal, June 2000


Current measurement by real-time counting of single electrons
journal, March 2005

  • Bylander, Jonas; Duty, Tim; Delsing, Per
  • Nature, Vol. 434, Issue 7031, p. 361-364
  • DOI: 10.1038/nature03375

Operation of SiGe HBTs Down to 70 mK
journal, January 2017

  • Ying, Hanbin; Wier, Brian R.; Dark, Jason
  • IEEE Electron Device Letters, Vol. 38, Issue 1
  • DOI: 10.1109/LED.2016.2633465

Sub-1-K Operation of SiGe Transistors and Circuits
journal, May 2009

  • Najafizadeh, L.; Adams, J. S.; Phillips, S. D.
  • IEEE Electron Device Letters, Vol. 30, Issue 5
  • DOI: 10.1109/LED.2009.2016767

Fast Charge Sensing of a Cavity-Coupled Double Quantum Dot Using a Josephson Parametric Amplifier
journal, July 2015


Double Quantum Dots as Detectors of High-Frequency Quantum Noise in Mesoscopic Conductors
journal, February 2000


Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
journal, May 2015

  • Curry, M. J.; England, T. D.; Bishop, N. C.
  • Applied Physics Letters, Vol. 106, Issue 20
  • DOI: 10.1063/1.4921308

Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation
journal, May 1996


Tunneling Conductance of Asymmetrical Barriers
journal, April 1970

  • Brinkman, W. F.; Dynes, R. C.; Rowell, J. M.
  • Journal of Applied Physics, Vol. 41, Issue 5
  • DOI: 10.1063/1.1659141

Tunnelling conductance of clean and doped Al-I-Pb junctions
journal, November 1978


Solving rate equations for electron tunneling via discrete quantum states
journal, January 2002


A new recombination model for device simulation including tunneling
journal, January 1992

  • Hurkx, G. A. M.; Klaassen, D. B. M.; Knuvers, M. P. G.
  • IEEE Transactions on Electron Devices, Vol. 39, Issue 2
  • DOI: 10.1109/16.121690

Amplifying quantum signals with the single-electron transistor
journal, August 2000

  • Devoret, Michel H.; Schoelkopf, Robert J.
  • Nature, Vol. 406, Issue 6799
  • DOI: 10.1038/35023253

Nonlinearities and parametric amplification in superconducting coplanar waveguide resonators
journal, June 2007

  • Tholén, Erik A.; Ergül, Adem; Doherty, Evelyn M.
  • Applied Physics Letters, Vol. 90, Issue 25, Article No. 253509
  • DOI: 10.1063/1.2750520

Silicon quantum electronics
journal, July 2013

  • Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea
  • Reviews of Modern Physics, Vol. 85, Issue 3
  • DOI: 10.1103/RevModPhys.85.961

On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds
journal, May 2009

  • Yuan, Jiahui; Cressler, John D.; Krithivasan, Ramkumar
  • IEEE Transactions on Electron Devices, Vol. 56, Issue 5
  • DOI: 10.1109/TED.2009.2016017

Rapid Single-Shot Measurement of a Singlet-Triplet Qubit
journal, October 2009


A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K
journal, February 2014

  • Chakraborty, Partha S.; Cardoso, Adilson S.; Wier, Brian R.
  • IEEE Electron Device Letters, Vol. 35, Issue 2
  • DOI: 10.1109/LED.2013.2295214

Cryogenic amplifier for fast real-time detection of single-electron tunneling
journal, September 2007

  • Vink, I. T.; Nooitgedagt, T.; Schouten, R. N.
  • Applied Physics Letters, Vol. 91, Issue 12
  • DOI: 10.1063/1.2783265

Single-shot read-out of an individual electron spin in a quantum dot
journal, July 2004

  • Elzerman, J. M.; Hanson, R.; Willems van Beveren, L. H.
  • Nature, Vol. 430, Issue 6998
  • DOI: 10.1038/nature02693

Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures
journal, February 2016

  • Tracy, L. A.; Luhman, D. R.; Carr, S. M.
  • Applied Physics Letters, Vol. 108, Issue 6
  • DOI: 10.1063/1.4941421

Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
journal, April 2015