skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on August 18, 2018

Title: Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
AC04-94AL85000; FG02-06ER46281
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 8; Journal Issue: 2; Related Information: CHORUS Timestamp: 2017-08-18 19:35:27; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1375543