Electrically driven deep ultraviolet MgZnO lasers at room temperature

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit; Su, Longxing; Shi, Wenhao; Lake, Roger; Liu, Jianlin

doi:10.1038/s41598-017-02791-0

Title: Electrically driven deep ultraviolet MgZnO lasers at room temperature

Journal Article · Thu Jun 01 04:00:00 UTC 2017 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-017-02791-0 · OSTI ID:1374978

^[1]; Bashar, Sunayna Binte ^[2];

^[2]; Su, Longxing ^[3]; Shi, Wenhao ^[2]; Lake, Roger ^[2]; Liu, Jianlin ^[2]

Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering; University of California, Riverside
Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering
Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering; Sun Yat-Sen Univ., Guangzhou, (China). School of Physics and Engineering

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm² are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.

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Research Organization:: Univ. of California, Riverside, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0012670

OSTI ID:: 1374978

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 7; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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ZnO-Based Ultraviolet Photodetectors Liu, Kewei; Sakurai, Makoto; Aono, Masakazu Sensors, Vol. 10, Issue 9 https://doi.org/10.3390/s100908604	journal	September 2010

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Deep-Ultraviolet Luminescence of Rocksalt-Structured MgxZn1−xO (x > 0.5) Films on MgO Substrates Kaneko, Kentaro; Tsumura, Keiichi; Ishii, Kyohei Journal of Electronic Materials, Vol. 47, Issue 8 https://doi.org/10.1007/s11664-018-6303-9	journal	April 2018
Effect of film thickness on structural and optical properties of sol-gel spin coated aluminum doped zinc oxide (Al:ZnO) thin films Pandey, R. K.; Ghosh, Koushik; Mishra, Swati Materials Research Express, Vol. 5, Issue 8 https://doi.org/10.1088/2053-1591/aad3a8	journal	July 2018
Assessment of fractal and multifractal features of sol-gel spin coated ZnO thin film surface Ghosh, Koushik; Pandey, R. K. Materials Research Express, Vol. 6, Issue 8 https://doi.org/10.1088/2053-1591/ab25d7	journal	June 2019

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