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Title: Electrically driven deep ultraviolet MgZnO lasers at room temperature

Abstract

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [2];  [1];  [1];  [1]
  1. Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering
  2. Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering; Sun Yat-Sen Univ., Guangzhou, (China). School of Physics and Engineering
Publication Date:
Research Org.:
Univ. of California, Riverside, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1374978
Grant/Contract Number:  
SC0012670
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Suja, Mohammad, Bashar, Sunayna Binte, Debnath, Bishwajit, Su, Longxing, Shi, Wenhao, Lake, Roger, and Liu, Jianlin. Electrically driven deep ultraviolet MgZnO lasers at room temperature. United States: N. p., 2017. Web. doi:10.1038/s41598-017-02791-0.
Suja, Mohammad, Bashar, Sunayna Binte, Debnath, Bishwajit, Su, Longxing, Shi, Wenhao, Lake, Roger, & Liu, Jianlin. Electrically driven deep ultraviolet MgZnO lasers at room temperature. United States. doi:10.1038/s41598-017-02791-0.
Suja, Mohammad, Bashar, Sunayna Binte, Debnath, Bishwajit, Su, Longxing, Shi, Wenhao, Lake, Roger, and Liu, Jianlin. Thu . "Electrically driven deep ultraviolet MgZnO lasers at room temperature". United States. doi:10.1038/s41598-017-02791-0. https://www.osti.gov/servlets/purl/1374978.
@article{osti_1374978,
title = {Electrically driven deep ultraviolet MgZnO lasers at room temperature},
author = {Suja, Mohammad and Bashar, Sunayna Binte and Debnath, Bishwajit and Su, Longxing and Shi, Wenhao and Lake, Roger and Liu, Jianlin},
abstractNote = {Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.},
doi = {10.1038/s41598-017-02791-0},
journal = {Scientific Reports},
number = 1,
volume = 7,
place = {United States},
year = {2017},
month = {6}
}

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