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Title: InAlAs photovoltaic cell design for high device efficiency

This study presents a new design for a single-junction InAlAs solar cell, which reduces parasitic absorption losses from the low band-gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti-reflective coating. The final cell had a 17.9% efficiency under 1-sun AM1.5 with an anti-reflective coating. Minority carrier diffusion lengths were extracted from external quantum efficiency data using physics-based device simulation software yielding 170 nm in the n-type emitter and 4.6 um in the p-type base, which is more than four times the diffusion length previously reported for a p-type InAlAs base. In conclusion, this report represents significant progress towards a high-performance InAlAs top cell for a triple-junction design lattice-matched to InP.
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [2] ;  [1] ; ORCiD logo [1]
  1. Rochester Institute of Technology, Rochester, NY (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 1062-7995
Grant/Contract Number:
AC36-08GO28308; AR0000335
Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Volume: 25; Journal Issue: 8; Journal ID: ISSN 1062-7995
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
14 SOLAR ENERGY; InAlAs; InP; MOVPE; multijunction solar cell
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1401536