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Title: InAlAs photovoltaic cell design for high device efficiency

This study presents a new design for a single-junction InAlAs solar cell, which reduces parasitic absorption losses from the low band-gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti-reflective coating. The final cell had a 17.9% efficiency under 1-sun AM1.5 with an anti-reflective coating. Minority carrier diffusion lengths were extracted from external quantum efficiency data using physics-based device simulation software yielding 170 nm in the n-type emitter and 4.6 um in the p-type base, which is more than four times the diffusion length previously reported for a p-type InAlAs base. In conclusion, this report represents significant progress towards a high-performance InAlAs top cell for a triple-junction design lattice-matched to InP.
Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [2] ;  [1] ; ORCiD logo [1]
  1. Rochester Institute of Technology, Rochester, NY (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-69002
Journal ID: ISSN 1062-7995
Grant/Contract Number:
AC36-08GO28308; AR0000335
Type:
Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Volume: 25; Journal Issue: 8; Journal ID: ISSN 1062-7995
Publisher:
Wiley
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; InAlAs; InP; MOVPE; multijunction solar cell
OSTI Identifier:
1374129
Alternate Identifier(s):
OSTI ID: 1401536

Smith, Brittany L., Bittner, Zachary S., Hellstroem, Staffan D., Nelson, George T., Slocum, Michael A., Norman, Andrew G., Forbes, David V., and Hubbard, Seth M.. InAlAs photovoltaic cell design for high device efficiency. United States: N. p., Web. doi:10.1002/pip.2895.
Smith, Brittany L., Bittner, Zachary S., Hellstroem, Staffan D., Nelson, George T., Slocum, Michael A., Norman, Andrew G., Forbes, David V., & Hubbard, Seth M.. InAlAs photovoltaic cell design for high device efficiency. United States. doi:10.1002/pip.2895.
Smith, Brittany L., Bittner, Zachary S., Hellstroem, Staffan D., Nelson, George T., Slocum, Michael A., Norman, Andrew G., Forbes, David V., and Hubbard, Seth M.. 2017. "InAlAs photovoltaic cell design for high device efficiency". United States. doi:10.1002/pip.2895. https://www.osti.gov/servlets/purl/1374129.
@article{osti_1374129,
title = {InAlAs photovoltaic cell design for high device efficiency},
author = {Smith, Brittany L. and Bittner, Zachary S. and Hellstroem, Staffan D. and Nelson, George T. and Slocum, Michael A. and Norman, Andrew G. and Forbes, David V. and Hubbard, Seth M.},
abstractNote = {This study presents a new design for a single-junction InAlAs solar cell, which reduces parasitic absorption losses from the low band-gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti-reflective coating. The final cell had a 17.9% efficiency under 1-sun AM1.5 with an anti-reflective coating. Minority carrier diffusion lengths were extracted from external quantum efficiency data using physics-based device simulation software yielding 170 nm in the n-type emitter and 4.6 um in the p-type base, which is more than four times the diffusion length previously reported for a p-type InAlAs base. In conclusion, this report represents significant progress towards a high-performance InAlAs top cell for a triple-junction design lattice-matched to InP.},
doi = {10.1002/pip.2895},
journal = {Progress in Photovoltaics},
number = 8,
volume = 25,
place = {United States},
year = {2017},
month = {4}
}

Works referenced in this record:

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001
  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156