Quantum spin Hall state in monolayer 1T'-WTe2
Abstract
A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T'-WTe2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulk bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Finally, our results establish monolayer 1T'-WTe2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).
- Authors:
-
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- SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Chinese Academy of Sciences (CAS), Shanghai (China). State Key Lab. of Functional Materials for Informatics, Shanghai Inst. of Microsystem and Information Technology; Shanghai Tech Univ., Shanghai (China). School of Physical Science and Technology
- SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
- Univ. of California, Berkeley, CA (United States). Dept.of Physics
- SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Max Plank POSTECH Center for Complex Phase Materials; Pusan National Univ., Busan (Korea, Republic of). Dept. of Physics
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Shanghai Tech Univ., Shanghai (China). School of Physical Science and Technology; Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Pohang Accelerator Lab.
- SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
- Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Pohang Accelerator Lab.
- Pusan National Univ., Busan (Korea, Republic of). Dept. of Physics
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Univ. of Oxford (United Kingdom). Dept. of Physics and Clarendon Lab.
- Ikerbasque, Basque Foundation for Science, Bilbao (Spain); CIC nanoGUNE Research Centre, San Sebastian (Spain)
- Chinese Academy of Sciences (CAS), Shanghai (China). State Key Lab. of Functional Materials for Informatics, Shanghai Inst. of Microsystem and Information Technology; Shanghai Tech Univ., Shanghai (China). School of Physical Science and Technology
- Univ. of California, Berkeley, CA (United States). Dept.of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Kavli Energy Nano Sciences Inst.
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); National Natural Science Foundation of China (NSFC)
- OSTI Identifier:
- 1373205
- Alternate Identifier(s):
- OSTI ID: 1437962
- Grant/Contract Number:
- AC02-76SF00515; AC02-05CH11231; FA9550-14-1-0277; MAT2014-60996-R
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Physics
- Additional Journal Information:
- Journal Volume: 13; Journal Issue: 7; Journal ID: ISSN 1745-2473
- Publisher:
- Nature Publishing Group (NPG)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Tang, Shujie, Zhang, Chaofan, Wong, Dillon, Pedramrazi, Zahra, Tsai, Hsin-Zon, Jia, Chunjing, Moritz, Brian, Claassen, Martin, Ryu, Hyejin, Kahn, Salman, Jiang, Juan, Yan, Hao, Hashimoto, Makoto, Lu, Donghui, Moore, Robert G., Hwang, Chan-Cuk, Hwang, Choongyu, Hussain, Zahid, Chen, Yulin, Ugeda, Miguel M., Liu, Zhi, Xie, Xiaoming, Devereaux, Thomas P., Crommie, Michael F., Mo, Sung-Kwan, and Shen, Zhi-Xun. Quantum spin Hall state in monolayer 1T'-WTe2. United States: N. p., 2017.
Web. doi:10.1038/NPHYS4174.
Tang, Shujie, Zhang, Chaofan, Wong, Dillon, Pedramrazi, Zahra, Tsai, Hsin-Zon, Jia, Chunjing, Moritz, Brian, Claassen, Martin, Ryu, Hyejin, Kahn, Salman, Jiang, Juan, Yan, Hao, Hashimoto, Makoto, Lu, Donghui, Moore, Robert G., Hwang, Chan-Cuk, Hwang, Choongyu, Hussain, Zahid, Chen, Yulin, Ugeda, Miguel M., Liu, Zhi, Xie, Xiaoming, Devereaux, Thomas P., Crommie, Michael F., Mo, Sung-Kwan, & Shen, Zhi-Xun. Quantum spin Hall state in monolayer 1T'-WTe2. United States. https://doi.org/10.1038/NPHYS4174
Tang, Shujie, Zhang, Chaofan, Wong, Dillon, Pedramrazi, Zahra, Tsai, Hsin-Zon, Jia, Chunjing, Moritz, Brian, Claassen, Martin, Ryu, Hyejin, Kahn, Salman, Jiang, Juan, Yan, Hao, Hashimoto, Makoto, Lu, Donghui, Moore, Robert G., Hwang, Chan-Cuk, Hwang, Choongyu, Hussain, Zahid, Chen, Yulin, Ugeda, Miguel M., Liu, Zhi, Xie, Xiaoming, Devereaux, Thomas P., Crommie, Michael F., Mo, Sung-Kwan, and Shen, Zhi-Xun. Mon .
"Quantum spin Hall state in monolayer 1T'-WTe2". United States. https://doi.org/10.1038/NPHYS4174. https://www.osti.gov/servlets/purl/1373205.
@article{osti_1373205,
title = {Quantum spin Hall state in monolayer 1T'-WTe2},
author = {Tang, Shujie and Zhang, Chaofan and Wong, Dillon and Pedramrazi, Zahra and Tsai, Hsin-Zon and Jia, Chunjing and Moritz, Brian and Claassen, Martin and Ryu, Hyejin and Kahn, Salman and Jiang, Juan and Yan, Hao and Hashimoto, Makoto and Lu, Donghui and Moore, Robert G. and Hwang, Chan-Cuk and Hwang, Choongyu and Hussain, Zahid and Chen, Yulin and Ugeda, Miguel M. and Liu, Zhi and Xie, Xiaoming and Devereaux, Thomas P. and Crommie, Michael F. and Mo, Sung-Kwan and Shen, Zhi-Xun},
abstractNote = {A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T'-WTe2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulk bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Finally, our results establish monolayer 1T'-WTe2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).},
doi = {10.1038/NPHYS4174},
journal = {Nature Physics},
number = 7,
volume = 13,
place = {United States},
year = {Mon Jun 26 00:00:00 EDT 2017},
month = {Mon Jun 26 00:00:00 EDT 2017}
}
Web of Science
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Enhanced 1T′-Phase Stabilization and Chemical Reactivity in a MoTe 2 Monolayer through Contact with a 2D Ca 2 N Electride
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Nonlinear anomalous Hall effect in few-layer WTe2
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Directional massless Dirac fermions in a layered van der Waals material with one-dimensional long-range order
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Electric-field-tuned topological phase transition in ultrathin Na3Bi
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Bi 2 Se 3 topological insulator at the 2D-limit: role of halide-doping on Dirac point
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Discovery of asymmetric NaXBi (X= Sn /Pb) monolayers with non-trivial topological properties
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Topological phase transition induced by p x,y and p z band inversion in a honeycomb lattice
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Epitaxial growth and electronic properties of few-layer stanene on InSb (1 1 1)
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Dual topological insulator and insulator-semimetal transition in mirror-symmetric honeycomb materials
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Quantization of spin Hall conductivity in two-dimensional topological insulators versus symmetry and spin-orbit interaction
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Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well
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Time-Reversal Symmetry-Breaking Nematic Insulators near Quantum Spin Hall Phase Transitions
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Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal
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Raman spectrum of layered jacutingaite (Pt 2 HgSe 3 ) crystals—Experimental and theoretical study
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Electronic properties of polymorphic two-dimensional layered chromium disulphide
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Varying topological properties of two-dimensional honeycomb lattices composed of endohedral fullerenes
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Experimental Observation of Bound States of 2D Dirac Electrons at Surface Steps of the Topological Insulator Bi$_2$Se$_3$
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Multi-carrier transport in ZrTe5 film
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Evidence for a quantum-spin-Hall phase in graphene decorated with Bi2Te3 nanoparticles
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Numerical analysis of surface and edge states in slabs, stripes, rods and surface steps of topological insulators
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Gate-induced superconductivity in a monolayer topological insulator
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Enhanced lifetimes of spin chains coupled to chiral edge states
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Gate tuning from exciton superfluid to quantum anomalous Hall in van der Waals heterobilayer
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Experimental Progress on Layered Topological Semimetals
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Two-dimensional topological materials discovery by symmetry-indicator method
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Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films
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Van der Waals heterostructures for high-performance device applications: challenges and opportunities
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