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Title: High-quality LaVO3 films as solar energy conversion material

Abstract

Mott insulating oxides and their heterostructures have recently been identified as potential photovoltaic materials with favorable absorption properties and an intrinsic built-in electric field that can efficiently separate excited electron hole pairs. At the same time, they are predicted to overcome the Shockley-Queisser limit due to strong electron electron interaction present. Despite these premises a high concentration of defects commonly observed in Mott insulating films acting as recombination centers can derogate the photovoltaic conversion efficiency. With use of the self-regulated growth kinetics in hybrid molecular beam epitaxy, this obstacle can be overcome. High-quality, stoichiometric LaVO3 films were grown with defect densities of in-gap states up to 2 orders of magnitude lower compared to the films in the literature, and a factor of 3 lower than LaVO3 bulk single crystals. Photoconductivity measurements revealed a significant photoresponsivity increase as high as tenfold of stoichiometric LaVO3 films compared to their nonstoichiometric counterparts. Furthermore, this work marks a critical step toward the realization of high-performance Mott insulator solar cells beyond conventional semiconductors.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [1];  [2];  [1];  [1]
  1. Pennsylvania State Univ., University Park, PA (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Scientific User Facilities Division
OSTI Identifier:
1371945
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 9; Journal Issue: 14; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; thin film; Mott insulator; photovoltaic materials; physical vapor deposition; transitional metal oxide

Citation Formats

Zhang, Hai -Tian, Brahlek, Matthew, Ji, Xiaoyu, Lei, Shiming, Lapano, Jason, Freeland, John W., Gopalan, Venkatraman, and Engel-Herbert, Roman. High-quality LaVO3 films as solar energy conversion material. United States: N. p., 2017. Web. https://doi.org/10.1021/acsami.6b16007.
Zhang, Hai -Tian, Brahlek, Matthew, Ji, Xiaoyu, Lei, Shiming, Lapano, Jason, Freeland, John W., Gopalan, Venkatraman, & Engel-Herbert, Roman. High-quality LaVO3 films as solar energy conversion material. United States. https://doi.org/10.1021/acsami.6b16007
Zhang, Hai -Tian, Brahlek, Matthew, Ji, Xiaoyu, Lei, Shiming, Lapano, Jason, Freeland, John W., Gopalan, Venkatraman, and Engel-Herbert, Roman. Tue . "High-quality LaVO3 films as solar energy conversion material". United States. https://doi.org/10.1021/acsami.6b16007. https://www.osti.gov/servlets/purl/1371945.
@article{osti_1371945,
title = {High-quality LaVO3 films as solar energy conversion material},
author = {Zhang, Hai -Tian and Brahlek, Matthew and Ji, Xiaoyu and Lei, Shiming and Lapano, Jason and Freeland, John W. and Gopalan, Venkatraman and Engel-Herbert, Roman},
abstractNote = {Mott insulating oxides and their heterostructures have recently been identified as potential photovoltaic materials with favorable absorption properties and an intrinsic built-in electric field that can efficiently separate excited electron hole pairs. At the same time, they are predicted to overcome the Shockley-Queisser limit due to strong electron electron interaction present. Despite these premises a high concentration of defects commonly observed in Mott insulating films acting as recombination centers can derogate the photovoltaic conversion efficiency. With use of the self-regulated growth kinetics in hybrid molecular beam epitaxy, this obstacle can be overcome. High-quality, stoichiometric LaVO3 films were grown with defect densities of in-gap states up to 2 orders of magnitude lower compared to the films in the literature, and a factor of 3 lower than LaVO3 bulk single crystals. Photoconductivity measurements revealed a significant photoresponsivity increase as high as tenfold of stoichiometric LaVO3 films compared to their nonstoichiometric counterparts. Furthermore, this work marks a critical step toward the realization of high-performance Mott insulator solar cells beyond conventional semiconductors.},
doi = {10.1021/acsami.6b16007},
journal = {ACS Applied Materials and Interfaces},
number = 14,
volume = 9,
place = {United States},
year = {2017},
month = {3}
}

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    Works referencing / citing this record:

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