Improved thermoelectric properties in heavily doped FeGa3

Ponnambalam, V.; Morelli, Donald T.

doi:10.1063/1.4938474

Title: Improved thermoelectric properties in heavily doped FeGa₃

Abstract

FeGa₃, a hybridization gap semiconductor, has been substituted with an n-type dopant Ge to form a series of compositions FeGa_3-xGe_x. Electrical and thermal transport properties of these compositions have been studied. Change in carrier density (n) is evident from the Hall measurements. The carrier density (n) can be as high as ~10²¹ cm^-3 in these compositions. In order to study the role of heavy doping on the thermoelectric properties of FeGa₃, an alloy series Fe_1-yCo_yGa_3-xGe_x has also been synthesized with higher concentrations of Ge (x = 0.1–0.35) and Co (y = 0.1–0.5). From resistivity and Seebeck coefficient measurements, it appears that heavy doping is accomplished by the simultaneous substitutions of Ge and Co. The systematic change in both resistivity (ρ) and Seebeck coefficient (α) is possibly due to change in the carrier density (n). The power factor (PF) α²/ρ improves steadily with increasing carrier density and the best PF ~1.1 mW/m K² is observed for the heavily doped compositions at 875 K. In the alloy series Fe_1-yCo_yGa_3-xGe_x, thermal conductivity is also reduced substantially due to point defect scattering. Finally, due to higher power factors, the figure of merit ZT improves to 0.25 at 875 K for the heavily doped compositions.

Authors:

Ponnambalam, V. ^[1]; Morelli, Donald T. ^[1]

Michigan State Univ., East Lansing, MI (United States). Dept. of Chemical Engineering and Materials Science

Publication Date:: Mon Dec 28 00:00:00 EST 2015

Research Org.:: Energy Frontier Research Centers (EFRC) (United States). Revolutionary Materials for Solid State Energy Conversion (RMSSEC)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1370328

Grant/Contract Number:: SC0001054

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 118; Journal Issue: 24; Related Information: RMSSEC partners with Michigan State University (lead); University of California, Los Angeles; University of Michigan; Northwestern University; Oak Ridge National Laboratory; Ohio State University; Wayne State University; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE

Citation Formats


                    Ponnambalam, V., and Morelli, Donald T. Improved thermoelectric properties in heavily doped FeGa3.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4938474.

Copy to clipboard


                    Ponnambalam, V., & Morelli, Donald T. Improved thermoelectric properties in heavily doped FeGa3.  United States.  https://doi.org/10.1063/1.4938474

Copy to clipboard


                    Ponnambalam, V., and Morelli, Donald T. Mon .  
"Improved thermoelectric properties in heavily doped FeGa3".  United States.  https://doi.org/10.1063/1.4938474.  https://www.osti.gov/servlets/purl/1370328.

Copy to clipboard


                    
@article{osti_1370328,

  title        = {Improved thermoelectric properties in heavily doped FeGa3},

  author       = {Ponnambalam, V. and Morelli, Donald T.},

  abstractNote = {FeGa3, a hybridization gap semiconductor, has been substituted with an n-type dopant Ge to form a series of compositions FeGa3-xGex. Electrical and thermal transport properties of these compositions have been studied. Change in carrier density (n) is evident from the Hall measurements. The carrier density (n) can be as high as ~1021 cm-3 in these compositions. In order to study the role of heavy doping on the thermoelectric properties of FeGa3, an alloy series Fe1-yCoyGa3-xGex has also been synthesized with higher concentrations of Ge (x = 0.1–0.35) and Co (y = 0.1–0.5). From resistivity and Seebeck coefficient measurements, it appears that heavy doping is accomplished by the simultaneous substitutions of Ge and Co. The systematic change in both resistivity (ρ) and Seebeck coefficient (α) is possibly due to change in the carrier density (n). The power factor (PF) α2/ρ improves steadily with increasing carrier density and the best PF ~1.1 mW/m K2 is observed for the heavily doped compositions at 875 K. In the alloy series Fe1-yCoyGa3-xGex, thermal conductivity is also reduced substantially due to point defect scattering. Finally, due to higher power factors, the figure of merit ZT improves to 0.25 at 875 K for the heavily doped compositions.},

  doi          = {10.1063/1.4938474},

  journal      = {Journal of Applied Physics},

  number       = 24,

  volume       = 118,

  place        = {United States},

  year         = {Mon Dec 28 00:00:00 EST 2015},

  month        = {Mon Dec 28 00:00:00 EST 2015}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1063/1.4938474

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 10 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Thermoelectric performance of intermetallic FeGa3 with Co doping
journal, September 2014

Ramachandran, B.; Syu, K. Z.; Kuo, Y. K.
Journal of Alloys and Compounds, Vol. 608
DOI: 10.1016/j.jallcom.2014.04.117

Evidence for a spin singlet state in the intermetallic semiconductor ${FeGa}_{3}$
journal, October 2010

Yin, Z. P.; Pickett, W. E.
Physical Review B, Vol. 82, Issue 15
DOI: 10.1103/PhysRevB.82.155202

Ferromagnetic instability in a doped band gap semiconductor FeGa $_{3}$
journal, October 2012

Umeo, K.; Hadano, Y.; Narazu, S.
Physical Review B, Vol. 86, Issue 14
DOI: 10.1103/PhysRevB.86.144421

Thermoelectric Materials, Phenomena, and Applications: A Bird's Eye View
journal, March 2006

Tritt, Terry M.; Subramanian, M. A.
MRS Bulletin, Vol. 31, Issue 3
DOI: 10.1557/mrs2006.44

Intermetallic solid solution Fe1−xCoxGa3: Synthesis, structure, NQR study and electronic band structure calculations
journal, October 2012

Verchenko, V. Yu.; Likhanov, M. S.; Kirsanova, M. A.
Journal of Solid State Chemistry, Vol. 194
DOI: 10.1016/j.jssc.2012.05.041

Thermodynamic and Transport Study of Electron- and Hole-Doped MGa3 Single Crystals (M = Fe, Co)
journal, December 2013

Cabrera-Baez, M.; Magnavita, E. Thizay; Ribeiro, Raquel A.
Journal of Electronic Materials, Vol. 43, Issue 6
DOI: 10.1007/s11664-013-2932-1

Electronic correlations in $Fe {Ga}_{3}$ and the effect of hole doping on its magnetic properties
journal, May 2014

Gamża, M. B.; Tomczak, J. M.; Brown, C.
Physical Review B, Vol. 89, Issue 19
DOI: 10.1103/PhysRevB.89.195102

Correlation effects in the small gap semiconductor FeGa ₃
journal, January 2010

Bittar, E. M.; Capan, C.; Seyfarth, G.
Journal of Physics: Conference Series, Vol. 200, Issue 1
DOI: 10.1088/1742-6596/200/1/012014

Itinerant origin of the ferromagnetic quantum critical point in Fe(Ga,Ge) $_{3}$
journal, August 2013

Singh, David J.
Physical Review B, Vol. 88, Issue 6
DOI: 10.1103/PhysRevB.88.064422

Electronic structures of semiconducting FeGa3, RuGa3, OsGa3, and RuIn3 with the CoGa3- or the FeGa3-type structure
journal, July 2006

Imai, Yoji; Watanabe, Akio
Intermetallics, Vol. 14, Issue 7
DOI: 10.1016/j.intermet.2005.10.013

Interplay between localized and itinerant magnetism in Co-substituted FeGa $_{3}$
journal, March 2014

Gippius, A. A.; Verchenko, V. Yu.; Tkachev, A. V.
Physical Review B, Vol. 89, Issue 10
DOI: 10.1103/PhysRevB.89.104426

Electronic structure of ${FeSi}_{1 - x} {Ge}_{x}$ and ${FeGa}_{3}$ investigated by soft x-ray photoelectron spectroscopy complementary to x-ray emission spectroscopy
journal, July 2008

Yamaoka, H.; Matsunami, M.; Eguchi, R.
Physical Review B, Vol. 78, Issue 4
DOI: 10.1103/PhysRevB.78.045125

Phonon-drag effect in ${FeGa}_{3}$
journal, November 2014

Wagner-Reetz, Maik; Kasinathan, Deepa; Schnelle, Walter
Physical Review B, Vol. 90, Issue 19
DOI: 10.1103/PhysRevB.90.195206

Effect of chemical doping on the thermoelectric properties of FeGa ₃
journal, May 2011

Haldolaarachchige, N.; Karki, A. B.; Phelan, W. Adam
Journal of Applied Physics, Vol. 109, Issue 10
DOI: 10.1063/1.3585843

Materials for thermoelectric energy conversion
journal, April 1988

Wood, C
Reports on Progress in Physics, Vol. 51, Issue 4, p. 459-539
DOI: 10.1088/0034-4885/51/4/001

Metal Site Doping in the Narrow-Gap FeGa3 Semiconductor
journal, September 2013

Kotur, B.; Babizhetskyy, V.; Bauer, E.
Materials Science, Vol. 49, Issue 2
DOI: 10.1007/s11003-013-9601-7

Thermoelectric properties of semiconductorlike intermetallic compounds TMGa3 (TM=Fe, Ru, and Os)
journal, November 2004

Amagai, Y.; Yamamoto, A.; Iida, T.
Journal of Applied Physics, Vol. 96, Issue 10
DOI: 10.1063/1.1803947

Extrapolation of Transport Properties and Figure of Merit of a Thermoelectric Material
journal, June 2015

Goldsmid, H.; Sharp, Jeff
Energies, Vol. 8, Issue 7
DOI: 10.3390/en8076451

Disturbing the dimers: Electron and hole doping in the intermetallic insulator ${FeGa}_{3}$
journal, October 2015

Botana, Antia S.; Quan, Yundi; Pickett, Warren E.
Physical Review B, Vol. 92, Issue 15
DOI: 10.1103/PhysRevB.92.155134

Effect of Carrier-Doping on the Thermoelectric Properties of Narrow-Bandgap (Fe,Ru)Ga3 Intermetallic Compounds
journal, January 2014

Takagiwa, Y.; Matsuura, Y.; Kimura, K.
Journal of Electronic Materials, Vol. 43, Issue 6
DOI: 10.1007/s11664-014-3008-6

Substitution Solid Solutions FeGa3−x E x and Their Thermoelectric Properties
journal, December 2013

Wagner-Reetz, M.; Cardoso-Gil, R.; Grin, Yu.
Journal of Electronic Materials, Vol. 43, Issue 6
DOI: 10.1007/s11664-013-2888-1

FeGa3 and RuGa3: Semiconducting Intermetallic Compounds
journal, April 2002

Häussermann, Ulrich; Boström, Magnus; Viklund, Per
Journal of Solid State Chemistry, Vol. 165, Issue 1
DOI: 10.1006/jssc.2001.9503

Electronic structure of a narrow-gap semiconductor FeGa $_{3}$ investigated by photoemission and inverse photoemission spectroscopies
journal, June 2011

Arita, M.; Shimada, K.; Utsumi, Y.
Physical Review B, Vol. 83, Issue 24
DOI: 10.1103/PhysRevB.83.245116

Observation of Energy Gap in FeGa ₃
journal, February 2008

Tsujii, Naohito; Yamaoka, Hitoshi; Matsunami, Masaharu
Journal of the Physical Society of Japan, Vol. 77, Issue 2
DOI: 10.1143/JPSJ.77.024705

Works referencing / citing this record:

Single Crystal Growth of FeGa ₃ and FeGa _{3− x} Ge _x from High-Temperature Solution Using the Czochralski Method
journal, September 2019

Bader, Kristian; Gille, Peter
Crystal Research and Technology, Vol. 55, Issue 2
DOI: 10.1002/crat.201900067

Similar Records in DOE PAGES and OSTI.GOV collections:

Role of phonon scattering by elastic strain field in thermoelectric Sr{sub 1−x}Y{sub x}TiO{sub 3−δ}

Journal Article Bhattacharya, S., E-mail: bbhatta@clemson.edu, E-mail: ttritt@clemson.edu ; Mehdizadeh Dehkordi, A. ; Tennakoon, S. ; ... - Journal of Applied Physics

Perovskite-type SrTiO{sub 3−δ} ceramics are multifunctional materials with significant potential as n-type thermoelectric (TE) materials. The electronic and thermal transport properties of spark plasma sintered polycrystalline Sr{sub 1−x}Y{sub x}TiO{sub 3−δ} (x = 0.05, 0.075, 0.1) ceramics are systematically investigated from (15–800) K. The Sr{sub 0.9}Y{sub 0.1}TiO{sub 3−δ} simultaneously exhibits a large Seebeck coefficient, α > −80 μV/K and moderately high electrical resistivity, ρ ∼ 0.8 mΩ-cm at a carrier concentration of ∼10{sup 21} cm{sup −3} at 300 K resulting in a high TE power factor defined herein as (α{sup 2}σT) ∼ 0.84 W/m-K at 760 K. Despite the similar atomic masses of Sr (87.6 g/mol) and Y (88.9 g/mol), the lattice thermal conductivity (κ{sub L}) ofmore »« less
https://doi.org/10.1063/1.4882377
Aliovalent substitutions of the 2D layered semiconductor GeAs

Journal Article Lee, Shannon ; Owens-Baird, Bryan ; Kovnir, Kirill - Journal of Solid State Chemistry

Layered tetrel pnictides have shown promise as thermoelectrics (TEs) due to their anisotropic crystal structure and weak van der Waals interactions between layers. The binary GeAs is a p-type semiconductor with a narrow indirect bandgap of 0.57 eV and a high Seebeck coefficient (~250 μV/K at 300 K). This work probes the limits of the aliovalent substitutions of GeAs to modify charge carrier concentration. Ga_xGe_1-xAs (x = 0.005, 0.01, and 0.02) and GeAs_1-ySe_y (y = 0.01, 0.02, 0.03, and 0.05) samples were synthesized to study the structure-property relationships in this system. Hole doping of GeAs via Ga-substitution increases carrier concentrationmore »« less
Cited by 7
https://doi.org/10.1016/j.jssc.2019.05.016

Full Text Available
Thermoelectric properties of Fe and Al double substituted MnSi{sub γ} (γ~1.73)

Journal Article Barczak, S. A. ; Downie, R. A. ; Popuri, S. R. ; ... - Journal of Solid State Chemistry

Two series of Fe and Al double substituted MnSi{sub γ} chimney ladders with a nominal valence electron count, VEC=14 per transition metal were prepared (γ=1.75). Simultaneous replacement of Mn with Fe and Si with Al yielded the Mn{sub 1−x}Fe{sub x}Si{sub 1.75−x}Al{sub x} series while the second Mn{sub 1−x}Fe{sub x}Si{sub 1.75–1.75x}Al{sub 2x} series follows the pseudo-binary between MnSi{sub 1.75} and FeAl{sub 2}. Scanning electron microscopy and elemental mapping revealed that ~60% of the nominal Al content ends up in the product with the remainder lost to sublimation, and that up to 7% Al can be substituted in the main group sublattice.more »« less
https://doi.org/10.1016/J.JSSC.2015.03.017
Electronic structure and thermoelectric properties of pnictogen-substituted ASn{sub 1.5}Te{sub 1.5} (A = Co, Rh, Ir) skutterudites

Journal Article Zevalkink, Alex ; Department of Materials Science, California Institute of Technology, 1200 E California Blvd, Pasadena, California 91125 ; Star, Kurt ; ... - Journal of Applied Physics

Substituting group 14 and 16 elements on the pnictogen site in the skutterudite structure yields a class of valence-precise ternary AX{sub 1.5}Y{sub 1.5} compounds (A = Co, Rh, Ir, X = Sn, Ge, and Y = S, Se, Te), in which X and Y form an ordered sub-structure. Compared with unfilled binary skutterudites, pnictogen-substituted phases exhibit extremely low lattice thermal conductivity due to increased structural complexity. Here, we investigate the role of the transition metal species in determining the electronic structure and transport properties of ASn{sub 1.5}Te{sub 1.5} compounds with A = Co, Rh, Ir. Density functional calculations using fully ordered structures reveal semiconducting behavior in all threemore »« less
https://doi.org/10.1063/1.4926479
Tuning the charge carrier density in the thermoelectric colusite

Journal Article Kim, Fiseong S. ; Suekuni, Koichiro ; Tanaka, Hiromi I. ; ... - Journal of Applied Physics

The colusite Cu{sub 26}V{sub 2}Sn{sub 6}S{sub 32} has high potential as a thermoelectric material at medium-high temperatures because of a large Seebeck coefficient (S ≃ 220 μV/K) and rather small electrical resistivity (ρ ≃ 100 μΩm) at 660 K. To improve the thermoelectric performance, we have tuned the hole carrier density p by substituting Zn for Cu in Cu{sub 26−x}Zn{sub x}V{sub 2}Sn{sub 6}S{sub 32} (x = 1–3) and starting with Cu and Sn deficient compositions in Cu{sub 26−y}V{sub 2}Sn{sub 6}S{sub 32} (y = 1, 2) and Cu{sub 26}V{sub 2}Sn{sub 6−z}S{sub 32} (z = 0.25–1), respectively. Powder x-ray diffraction and electron-probe microanalysis showed that the Zn-substituted samples and Sn-deficient (z ≥ 0.5)more »« less
https://doi.org/10.1063/1.4948475

Similar Records

Title: Improved thermoelectric properties in heavily doped FeGa3

Abstract

Citation Formats

Thermoelectric performance of intermetallic FeGa3 with Co doping journal, September 2014

Evidence for a spin singlet state in the intermetallic semiconductor FeGa 3 journal, October 2010

Ferromagnetic instability in a doped band gap semiconductor FeGa 3 journal, October 2012

Thermoelectric Materials, Phenomena, and Applications: A Bird's Eye View journal, March 2006

Intermetallic solid solution Fe1−xCoxGa3: Synthesis, structure, NQR study and electronic band structure calculations journal, October 2012

Thermodynamic and Transport Study of Electron- and Hole-Doped MGa3 Single Crystals (M = Fe, Co) journal, December 2013

Electronic correlations in Fe Ga 3 and the effect of hole doping on its magnetic properties journal, May 2014

Correlation effects in the small gap semiconductor FeGa 3 journal, January 2010

Itinerant origin of the ferromagnetic quantum critical point in Fe(Ga,Ge) 3 journal, August 2013

Electronic structures of semiconducting FeGa3, RuGa3, OsGa3, and RuIn3 with the CoGa3- or the FeGa3-type structure journal, July 2006

Interplay between localized and itinerant magnetism in Co-substituted FeGa 3 journal, March 2014

Electronic structure of FeSi 1 − x Ge x and FeGa 3 investigated by soft x-ray photoelectron spectroscopy complementary to x-ray emission spectroscopy journal, July 2008

Phonon-drag effect in FeGa 3 journal, November 2014

Effect of chemical doping on the thermoelectric properties of FeGa 3 journal, May 2011

Materials for thermoelectric energy conversion journal, April 1988

Metal Site Doping in the Narrow-Gap FeGa3 Semiconductor journal, September 2013

Thermoelectric properties of semiconductorlike intermetallic compounds TMGa3 (TM=Fe, Ru, and Os) journal, November 2004

Extrapolation of Transport Properties and Figure of Merit of a Thermoelectric Material journal, June 2015

Disturbing the dimers: Electron and hole doping in the intermetallic insulator FeGa 3 journal, October 2015

Effect of Carrier-Doping on the Thermoelectric Properties of Narrow-Bandgap (Fe,Ru)Ga3 Intermetallic Compounds journal, January 2014

Substitution Solid Solutions FeGa3−x E x and Their Thermoelectric Properties journal, December 2013

FeGa3 and RuGa3: Semiconducting Intermetallic Compounds journal, April 2002

Electronic structure of a narrow-gap semiconductor FeGa 3 investigated by photoemission and inverse photoemission spectroscopies journal, June 2011

Observation of Energy Gap in FeGa 3 journal, February 2008

Single Crystal Growth of FeGa 3 and FeGa 3− x Ge x from High-Temperature Solution Using the Czochralski Method journal, September 2019

Title: Improved thermoelectric properties in heavily doped FeGa₃

Thermoelectric performance of intermetallic FeGa3 with Co doping
journal, September 2014

Evidence for a spin singlet state in the intermetallic semiconductor ${FeGa}_{3}$
journal, October 2010

Ferromagnetic instability in a doped band gap semiconductor FeGa $_{3}$
journal, October 2012

Thermoelectric Materials, Phenomena, and Applications: A Bird's Eye View
journal, March 2006

Intermetallic solid solution Fe1−xCoxGa3: Synthesis, structure, NQR study and electronic band structure calculations
journal, October 2012

Thermodynamic and Transport Study of Electron- and Hole-Doped MGa3 Single Crystals (M = Fe, Co)
journal, December 2013

Electronic correlations in $Fe {Ga}_{3}$ and the effect of hole doping on its magnetic properties
journal, May 2014

Correlation effects in the small gap semiconductor FeGa ₃
journal, January 2010

Itinerant origin of the ferromagnetic quantum critical point in Fe(Ga,Ge) $_{3}$
journal, August 2013

Electronic structures of semiconducting FeGa3, RuGa3, OsGa3, and RuIn3 with the CoGa3- or the FeGa3-type structure
journal, July 2006

Interplay between localized and itinerant magnetism in Co-substituted FeGa $_{3}$
journal, March 2014

Electronic structure of ${FeSi}_{1 - x} {Ge}_{x}$ and ${FeGa}_{3}$ investigated by soft x-ray photoelectron spectroscopy complementary to x-ray emission spectroscopy
journal, July 2008

Phonon-drag effect in ${FeGa}_{3}$
journal, November 2014

Effect of chemical doping on the thermoelectric properties of FeGa ₃
journal, May 2011

Materials for thermoelectric energy conversion
journal, April 1988

Metal Site Doping in the Narrow-Gap FeGa3 Semiconductor
journal, September 2013

Thermoelectric properties of semiconductorlike intermetallic compounds TMGa3 (TM=Fe, Ru, and Os)
journal, November 2004

Extrapolation of Transport Properties and Figure of Merit of a Thermoelectric Material
journal, June 2015

Disturbing the dimers: Electron and hole doping in the intermetallic insulator ${FeGa}_{3}$
journal, October 2015

Effect of Carrier-Doping on the Thermoelectric Properties of Narrow-Bandgap (Fe,Ru)Ga3 Intermetallic Compounds
journal, January 2014

Substitution Solid Solutions FeGa3−x E x and Their Thermoelectric Properties
journal, December 2013

FeGa3 and RuGa3: Semiconducting Intermetallic Compounds
journal, April 2002

Electronic structure of a narrow-gap semiconductor FeGa $_{3}$ investigated by photoemission and inverse photoemission spectroscopies
journal, June 2011

Observation of Energy Gap in FeGa ₃
journal, February 2008

Single Crystal Growth of FeGa ₃ and FeGa _{3− x} Ge _x from High-Temperature Solution Using the Czochralski Method
journal, September 2019