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Title: Robust antiferromagnetic spin waves across the metal-insulator transition in hole-doped BaMn 2 As 2

Journal Article · · Physical Review B
 [1];  [2];  [2];  [2]; ORCiD logo [3]; ORCiD logo [3]; ORCiD logo [3];  [2];  [2];  [2];  [2]
  1. Istanbul Technical Univ., Maslak, Istanbul (Turkey). Dept. of Physics Engineering; Scientific and Technological Research Council of Turkey (Tubitak), Ankara (Turkey)
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division

BaMn2 As2 is an antiferromagnetic insulator where a metal-insulator transition occurs with hole doping via the substitution of Ba with K. The metal-insulator transition causes only a small suppression of the Néel temperature (TN) and the ordered moment, suggesting that doped holes interact weakly with the Mn spin system. Powder inelastic neutron scattering measurements were performed on three different samples of Ba1 - xKxMn2 As2 with x = 0 , 0.125, and 0.25 to study the effect of hole doping and metallization on the spin dynamics. We compare the neutron intensities to a linear spin-wave theory approximation to the J1 $$-$$ J2 $$-$$ Jc Heisenberg model. Hole doping is found to introduce only minor modifications to the exchange energies and spin gap. Lastly, the changes observed in the exchange constants are consistent with the small drop of TN with doping.

Research Organization:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-07CH11358
OSTI ID:
1368057
Report Number(s):
IS-J--9353
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 22 Vol. 95; ISSN 2469-9950; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

References (32)

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  • Azuah, Richard Tumanjong; Kneller, Larry R.; Qiu, Yiming
  • Journal of Research of the National Institute of Standards and Technology, Vol. 114, Issue 6 https://doi.org/10.6028/jres.114.025
journal November 2009

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