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Title: Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4]
  1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520
  2. California NanoSystems Institute and Department of Electrical Engineering, University of California, Los Angeles, California 90095
  3. Department of Physics and Micron School of Materials Science and Engineering, Boise State University, Boise, Idaho 83725
  4. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Publication Date:
Grant/Contract Number:
AC05-06OR23100; Science Graduate Fellowship Program DE-AC05-06OR23100
Type:
Published Article
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Name: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics Journal Volume: 35 Journal Issue: 1; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1364083
Alternate Identifier(s):
OSTI ID: 1421265

Yerino, Christopher D., Liang, Baolai, Huffaker, Diana L., Simmonds, Paul J., and Lee, Minjoo Larry. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110). United States: N. p., Web. doi:10.1116/1.4972049.
Yerino, Christopher D., Liang, Baolai, Huffaker, Diana L., Simmonds, Paul J., & Lee, Minjoo Larry. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110). United States. doi:10.1116/1.4972049.
Yerino, Christopher D., Liang, Baolai, Huffaker, Diana L., Simmonds, Paul J., and Lee, Minjoo Larry. 2016. "Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)". United States. doi:10.1116/1.4972049.
@article{osti_1364083,
title = {Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)},
author = {Yerino, Christopher D. and Liang, Baolai and Huffaker, Diana L. and Simmonds, Paul J. and Lee, Minjoo Larry},
abstractNote = {},
doi = {10.1116/1.4972049},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 1,
volume = 35,
place = {United States},
year = {2016},
month = {12}
}