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Title: High-efficiency selective boron emitter formed by wet chemical etch-back for n -type screen-printed Si solar cells

Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2]
  1. Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, Georgia 30332-0250, USA
  2. Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, Georgia 30332-0250, USA, Suniva Inc., 5765 Peachtree Industrial Blvd., Norcross, Georgia 30092, USA
Publication Date:
Grant/Contract Number:
FPACE II contract DE-EE0006336; Solarmat 2 contract DE-EE0006815
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 2; Related Information: CHORUS Timestamp: 2018-02-14 09:19:53; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1361726