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Title: Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity

Abstract

In this paper, we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ~35 μW cm-1 K-2 and figure of merit (ZT) value ~0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W-1) is decreased by ~68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Univ. of Houston, TX (United States); Xihua Univ., Chengdu (China)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation of China (NSFC) (China); Youth Science Innovation Program of Sichuan Province (China); Science and Technology Support Program of Sichuan Province (China); Chunhui Program from Education Ministry of China (China); Xihua Univ. (China)
Contributing Org.:
Chinese Academy of Sciences (CAS), Beijing (China); Robert Bosch LLC, Cambridge, MA (United States)
OSTI Identifier:
1255315
Alternate Identifier(s):
OSTI ID: 1360094; OSTI ID: 1416460
Grant/Contract Number:  
SC0010831; 51372208; 51472207; 51572226; 2015TD0017; 2015GZ0060; Z2014042; SZJJ2013-034; DOE DE-SC0010831
Resource Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 4 Journal Issue: 10; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Doping; Thermal conductivity; Electron densities of states; Carrier density; Density functional theory

Citation Formats

He, Ran, Huang, Lihong, Wang, Yumei, Samsonidze, Georgy, Kozinsky, Boris, Zhang, Qinyong, and Ren, Zhifeng. Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity. United States: N. p., 2016. Web. doi:10.1063/1.4952994.
He, Ran, Huang, Lihong, Wang, Yumei, Samsonidze, Georgy, Kozinsky, Boris, Zhang, Qinyong, & Ren, Zhifeng. Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity. United States. https://doi.org/10.1063/1.4952994
He, Ran, Huang, Lihong, Wang, Yumei, Samsonidze, Georgy, Kozinsky, Boris, Zhang, Qinyong, and Ren, Zhifeng. Sat . "Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity". United States. https://doi.org/10.1063/1.4952994.
@article{osti_1255315,
title = {Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity},
author = {He, Ran and Huang, Lihong and Wang, Yumei and Samsonidze, Georgy and Kozinsky, Boris and Zhang, Qinyong and Ren, Zhifeng},
abstractNote = {In this paper, we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ~35 μW cm-1 K-2 and figure of merit (ZT) value ~0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W-1) is decreased by ~68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.},
doi = {10.1063/1.4952994},
journal = {APL Materials},
number = 10,
volume = 4,
place = {United States},
year = {Sat Oct 01 00:00:00 EDT 2016},
month = {Sat Oct 01 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4952994

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Cited by: 49 works
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