Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1359948
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Thin Solid Films
- Additional Journal Information:
- Journal Name: Thin Solid Films Journal Volume: 608 Journal Issue: C; Journal ID: ISSN 0040-6090
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Beres, M., Yu, K. M., Syzdek, J., and Mao, S. S. Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process. Netherlands: N. p., 2016.
Web. doi:10.1016/j.tsf.2016.04.019.
Beres, M., Yu, K. M., Syzdek, J., & Mao, S. S. Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process. Netherlands. https://doi.org/10.1016/j.tsf.2016.04.019
Beres, M., Yu, K. M., Syzdek, J., and Mao, S. S. Wed .
"Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process". Netherlands. https://doi.org/10.1016/j.tsf.2016.04.019.
@article{osti_1359948,
title = {Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process},
author = {Beres, M. and Yu, K. M. and Syzdek, J. and Mao, S. S.},
abstractNote = {},
doi = {10.1016/j.tsf.2016.04.019},
journal = {Thin Solid Films},
number = C,
volume = 608,
place = {Netherlands},
year = {Wed Jun 01 00:00:00 EDT 2016},
month = {Wed Jun 01 00:00:00 EDT 2016}
}
Free Publicly Available Full Text
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https://doi.org/10.1016/j.tsf.2016.04.019
https://doi.org/10.1016/j.tsf.2016.04.019
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Cited by: 9 works
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