Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current
Abstract
Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. But, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. Here, we employed unconventional self-assembly geometries obtained from blends of block copolymers (BCPs) to form ring-shaped hollow PCM nanostructures with an ultrasmall contact area between a phase-change material (Ge2Sb2Te5) and a heater (TiN) electrode. The high-density (approximately 0.1 terabits per square inch) PCM nanoring arrays showed extremely small switching current of 2-3 mu A. Furthermore, the relatively small reset current of the ring-shaped PCM compared to the pillar-shaped devices is attributed to smaller switching volume, which is well supported by electro-thermal simulation results. Our approach may also be extended to other nonvolatile memory device applications such as resistive switching memory and magnetic storage devices, where the control of nanoscale geometry can significantly affect device performances.
- Authors:
-
- Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of). Dept. of Materials Science and Engineering; Global Frontier R&D Center for Hybrid Interface Materials (HIM), Busan (Korea, Republic of)
- Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of). Dept. of Materials Science and Engineering
- Pusan National Univ., Busan (Korea, Republic of). Shool of Materials Science and Engineering
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Gunma Univ. (Japan)
- Global Frontier R&D Center for Hybrid Interface Materials (HIM), Busan (Korea, Republic of); Pusan National Univ., Busan (Korea, Republic of). Shool of Materials Science and Engineering
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Foundation of Korea (NRF)
- OSTI Identifier:
- 1357004
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Chemistry of Materials
- Additional Journal Information:
- Journal Volume: 27; Journal Issue: 7; Journal ID: ISSN 0897-4756
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Park, Woon Ik, Kim, Jong Min, Jeong, Jae Won, Hur, Yoon Hyoung, Choi, Young Joong, Kwon, Se-Hun, Hong, Seungbum, Yin, You, Jung, Yeon Sik, and Kim, Kwang Ho. Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current. United States: N. p., 2015.
Web. doi:10.1021/acs.chemmater.5b00542.
Park, Woon Ik, Kim, Jong Min, Jeong, Jae Won, Hur, Yoon Hyoung, Choi, Young Joong, Kwon, Se-Hun, Hong, Seungbum, Yin, You, Jung, Yeon Sik, & Kim, Kwang Ho. Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current. United States. https://doi.org/10.1021/acs.chemmater.5b00542
Park, Woon Ik, Kim, Jong Min, Jeong, Jae Won, Hur, Yoon Hyoung, Choi, Young Joong, Kwon, Se-Hun, Hong, Seungbum, Yin, You, Jung, Yeon Sik, and Kim, Kwang Ho. Tue .
"Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current". United States. https://doi.org/10.1021/acs.chemmater.5b00542. https://www.osti.gov/servlets/purl/1357004.
@article{osti_1357004,
title = {Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current},
author = {Park, Woon Ik and Kim, Jong Min and Jeong, Jae Won and Hur, Yoon Hyoung and Choi, Young Joong and Kwon, Se-Hun and Hong, Seungbum and Yin, You and Jung, Yeon Sik and Kim, Kwang Ho},
abstractNote = {Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. But, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. Here, we employed unconventional self-assembly geometries obtained from blends of block copolymers (BCPs) to form ring-shaped hollow PCM nanostructures with an ultrasmall contact area between a phase-change material (Ge2Sb2Te5) and a heater (TiN) electrode. The high-density (approximately 0.1 terabits per square inch) PCM nanoring arrays showed extremely small switching current of 2-3 mu A. Furthermore, the relatively small reset current of the ring-shaped PCM compared to the pillar-shaped devices is attributed to smaller switching volume, which is well supported by electro-thermal simulation results. Our approach may also be extended to other nonvolatile memory device applications such as resistive switching memory and magnetic storage devices, where the control of nanoscale geometry can significantly affect device performances.},
doi = {10.1021/acs.chemmater.5b00542},
journal = {Chemistry of Materials},
number = 7,
volume = 27,
place = {United States},
year = {Tue Mar 17 00:00:00 EDT 2015},
month = {Tue Mar 17 00:00:00 EDT 2015}
}
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