σ–π-Band Inversion in a Novel Two-Dimensional Material
Abstract
In this paper, we present a theoretical study of a new type of two-dimensional material exhibiting a pentagonal arrangement of C and Si atoms. Pentagonal SiC2 is investigated with density functional theory-based calculations to show that the buckled nanostructure is dynamically stable, and exhibits an indirect energy band gap and an enhanced electronic dispersion with respect to the all-carbon counterpart. Computed Born effective charges exhibit a significant anisotropy for C and Si atoms that deviates substantially from their static effective charges. We establish an accurate tunability of the vertical location of the p-p-σ and p-p-π bands and show that under compressive biaxial strain the density of states decreases, and conversely for tensile biaxial strain. Finally, this coupling between the tunability of strain-mediated density of states and semiconducting properties in a monolayered structure may allow for the development of applications in semiconducting stretchable electronics.
- Authors:
-
- Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States). James Franck Inst.
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Contributing Org.:
- Univ. of Chicago, IL (United States)
- OSTI Identifier:
- 1356632
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physical Chemistry. C
- Additional Journal Information:
- Journal Volume: 119; Journal Issue: 33; Journal ID: ISSN 1932-7447
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Lopez-Bezanilla, Alejandro, and Littlewood, Peter B. σ–π-Band Inversion in a Novel Two-Dimensional Material. United States: N. p., 2015.
Web. doi:10.1021/acs.jpcc.5b04726.
Lopez-Bezanilla, Alejandro, & Littlewood, Peter B. σ–π-Band Inversion in a Novel Two-Dimensional Material. United States. https://doi.org/10.1021/acs.jpcc.5b04726
Lopez-Bezanilla, Alejandro, and Littlewood, Peter B. Fri .
"σ–π-Band Inversion in a Novel Two-Dimensional Material". United States. https://doi.org/10.1021/acs.jpcc.5b04726. https://www.osti.gov/servlets/purl/1356632.
@article{osti_1356632,
title = {σ–π-Band Inversion in a Novel Two-Dimensional Material},
author = {Lopez-Bezanilla, Alejandro and Littlewood, Peter B.},
abstractNote = {In this paper, we present a theoretical study of a new type of two-dimensional material exhibiting a pentagonal arrangement of C and Si atoms. Pentagonal SiC2 is investigated with density functional theory-based calculations to show that the buckled nanostructure is dynamically stable, and exhibits an indirect energy band gap and an enhanced electronic dispersion with respect to the all-carbon counterpart. Computed Born effective charges exhibit a significant anisotropy for C and Si atoms that deviates substantially from their static effective charges. We establish an accurate tunability of the vertical location of the p-p-σ and p-p-π bands and show that under compressive biaxial strain the density of states decreases, and conversely for tensile biaxial strain. Finally, this coupling between the tunability of strain-mediated density of states and semiconducting properties in a monolayered structure may allow for the development of applications in semiconducting stretchable electronics.},
doi = {10.1021/acs.jpcc.5b04726},
journal = {Journal of Physical Chemistry. C},
number = 33,
volume = 119,
place = {United States},
year = {Fri Jul 24 00:00:00 EDT 2015},
month = {Fri Jul 24 00:00:00 EDT 2015}
}
Web of Science
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