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Title: Electrochemical Control of Copper Intercalation into Nanoscale Bi2Se3

Abstract

Intercalation of exotic atoms or molecules into the layered materials remains an extensively investigated subject in current physics and chemistry. However, traditionally melt-growth and chemical interaction strategies are either limited by insufficiency of intercalant concentrations or destitute of accurate controllability. Here, we have developed a general electrochemical intercalation method to efficaciously regulate the concentration of zerovalent copper atoms into layered Bi2Se3, followed by comprehensive experimental characterization and analyses. Up to 57% copper atoms (Cu6.7Bi2Se3) can be intercalated with no disruption to the host lattice. Meanwhile the unconventional resistance dip accompanied by a hysteresis loop below 40 K, as well as the emergence of new Raman peak in CuxBi2Se3, is a distinct manifestation of the interplay between intercalated Cu atoms with Bi2Se3 host. Furthermore, our work demonstrates a new methodology to study fundamentally new and unexpected physical behaviors in intercalated metastable materials.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [2]
  1. Stanford Univ., Stanford, CA (United States)
  2. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1353194
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 3; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; bismuth selenide; Electrochemical intercalation; hysteresis; resistance dip; two-dimensional materials

Citation Formats

Zhang, Jinsong, Sun, Jie, Li, Yanbin, Shi, Feifei, and Cui, Yi. Electrochemical Control of Copper Intercalation into Nanoscale Bi2Se3. United States: N. p., 2017. Web. doi:10.1021/acs.nanolett.6b05062.
Zhang, Jinsong, Sun, Jie, Li, Yanbin, Shi, Feifei, & Cui, Yi. Electrochemical Control of Copper Intercalation into Nanoscale Bi2Se3. United States. https://doi.org/10.1021/acs.nanolett.6b05062
Zhang, Jinsong, Sun, Jie, Li, Yanbin, Shi, Feifei, and Cui, Yi. Mon . "Electrochemical Control of Copper Intercalation into Nanoscale Bi2Se3". United States. https://doi.org/10.1021/acs.nanolett.6b05062. https://www.osti.gov/servlets/purl/1353194.
@article{osti_1353194,
title = {Electrochemical Control of Copper Intercalation into Nanoscale Bi2Se3},
author = {Zhang, Jinsong and Sun, Jie and Li, Yanbin and Shi, Feifei and Cui, Yi},
abstractNote = {Intercalation of exotic atoms or molecules into the layered materials remains an extensively investigated subject in current physics and chemistry. However, traditionally melt-growth and chemical interaction strategies are either limited by insufficiency of intercalant concentrations or destitute of accurate controllability. Here, we have developed a general electrochemical intercalation method to efficaciously regulate the concentration of zerovalent copper atoms into layered Bi2Se3, followed by comprehensive experimental characterization and analyses. Up to 57% copper atoms (Cu6.7Bi2Se3) can be intercalated with no disruption to the host lattice. Meanwhile the unconventional resistance dip accompanied by a hysteresis loop below 40 K, as well as the emergence of new Raman peak in CuxBi2Se3, is a distinct manifestation of the interplay between intercalated Cu atoms with Bi2Se3 host. Furthermore, our work demonstrates a new methodology to study fundamentally new and unexpected physical behaviors in intercalated metastable materials.},
doi = {10.1021/acs.nanolett.6b05062},
journal = {Nano Letters},
number = 3,
volume = 17,
place = {United States},
year = {Mon Feb 20 00:00:00 EST 2017},
month = {Mon Feb 20 00:00:00 EST 2017}
}

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Cited by: 26 works
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Works referencing / citing this record:

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