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Title: Electrochemical Control of Copper Intercalation into Nanoscale Bi 2Se 3

Intercalation of exotic atoms or molecules into the layered materials remains an extensively investigated subject in current physics and chemistry. However, traditionally melt-growth and chemical interaction strategies are either limited by insufficiency of intercalant concentrations or destitute of accurate controllability. Here, we have developed a general electrochemical intercalation method to efficaciously regulate the concentration of zerovalent copper atoms into layered Bi 2Se 3, followed by comprehensive experimental characterization and analyses. Up to 57% copper atoms (Cu 6.7Bi 2Se 3) can be intercalated with no disruption to the host lattice. Meanwhile the unconventional resistance dip accompanied by a hysteresis loop below 40 K, as well as the emergence of new Raman peak in Cu xBi 2Se 3, is a distinct manifestation of the interplay between intercalated Cu atoms with Bi 2Se 3 host. Furthermore, our work demonstrates a new methodology to study fundamentally new and unexpected physical behaviors in intercalated metastable materials.
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [2]
  1. Stanford Univ., Stanford, CA (United States)
  2. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 3; Journal ID: ISSN 1530-6984
American Chemical Society
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; bismuth selenide; Electrochemical intercalation; hysteresis; resistance dip; two-dimensional materials
OSTI Identifier: