Effective Hamiltonians for phosphorene and silicene
Abstract
We derived the effective Hamiltonians for silicene and phosphorene with strain, electric field and magnetic field using the method of invariants. Our paper extends the work of Geissler et al 2013 (New J. Phys. 15 085030) on silicene, and Li and Appelbaum 2014 (Phys. Rev. B 90, 115439) on phosphorene. Our Hamiltonians are compared to an equivalent one for graphene. For silicene, the expression for band warping is obtained analytically and found to be of different order than for graphene. We prove that a uniaxial strain does not open a gap, resolving contradictory numerical results in the literature. For phosphorene, it is shown that the bands near the Brillouin zone center only have terms in even powers of the wave vector. We predict that the energies change quadratically in the presence of a perpendicular external electric field but linearly in a perpendicular magnetic field, as opposed to those for silicene which vary linearly in both cases. Preliminary ab initio calculations for the intrinsic band structures have been carried out in order to evaluate some of the k center dot p parameters.
- Authors:
-
- The Citadel, Charleston, SC (United States)
- Argonne National Lab., Lomont, IL (United States)
- Univ. of North Carolina, Charlotte, NC (United States)
- Univ. of Denmark, Lyngby (Denmark)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division; The Citadel
- OSTI Identifier:
- 1194161
- Alternate Identifier(s):
- OSTI ID: 1352839
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- New Journal of Physics
- Additional Journal Information:
- Journal Volume: 17; Journal Issue: 2; Journal ID: ISSN 1367-2630
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Lew Yan Voon, L. C., Lopez-Bezanilla, A., Wang, J., Zhang, Y., and Willatzen, M. Effective Hamiltonians for phosphorene and silicene. United States: N. p., 2015.
Web. doi:10.1088/1367-2630/17/2/025004.
Lew Yan Voon, L. C., Lopez-Bezanilla, A., Wang, J., Zhang, Y., & Willatzen, M. Effective Hamiltonians for phosphorene and silicene. United States. https://doi.org/10.1088/1367-2630/17/2/025004
Lew Yan Voon, L. C., Lopez-Bezanilla, A., Wang, J., Zhang, Y., and Willatzen, M. Wed .
"Effective Hamiltonians for phosphorene and silicene". United States. https://doi.org/10.1088/1367-2630/17/2/025004. https://www.osti.gov/servlets/purl/1194161.
@article{osti_1194161,
title = {Effective Hamiltonians for phosphorene and silicene},
author = {Lew Yan Voon, L. C. and Lopez-Bezanilla, A. and Wang, J. and Zhang, Y. and Willatzen, M.},
abstractNote = {We derived the effective Hamiltonians for silicene and phosphorene with strain, electric field and magnetic field using the method of invariants. Our paper extends the work of Geissler et al 2013 (New J. Phys. 15 085030) on silicene, and Li and Appelbaum 2014 (Phys. Rev. B 90, 115439) on phosphorene. Our Hamiltonians are compared to an equivalent one for graphene. For silicene, the expression for band warping is obtained analytically and found to be of different order than for graphene. We prove that a uniaxial strain does not open a gap, resolving contradictory numerical results in the literature. For phosphorene, it is shown that the bands near the Brillouin zone center only have terms in even powers of the wave vector. We predict that the energies change quadratically in the presence of a perpendicular external electric field but linearly in a perpendicular magnetic field, as opposed to those for silicene which vary linearly in both cases. Preliminary ab initio calculations for the intrinsic band structures have been carried out in order to evaluate some of the k center dot p parameters.},
doi = {10.1088/1367-2630/17/2/025004},
journal = {New Journal of Physics},
number = 2,
volume = 17,
place = {United States},
year = {Wed Feb 04 00:00:00 EST 2015},
month = {Wed Feb 04 00:00:00 EST 2015}
}
Web of Science
Works referenced in this record:
The electronic properties of graphene
journal, January 2009
- Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
- Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
Electronic structure of silicon-based nanostructures
journal, August 2007
- Guzmán-Verri, Gian G.; Lew Yan Voon, L. C.
- Physical Review B, Vol. 76, Issue 7
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
journal, March 2014
- Liu, Han; Neal, Adam T.; Zhu, Zhen
- ACS Nano, Vol. 8, Issue 4
Theoretical possibility of stage corrugation in Si and Ge analogs of graphite
journal, November 1994
- Takeda, Kyozaburo; Shiraishi, Kenji
- Physical Review B, Vol. 50, Issue 20
Electronic structure of black phosphorus: Tight binding approach
journal, May 1981
- Takao, Yukihiro; Morita, Akira
- Physica B+C, Vol. 105, Issue 1-3
Invariant expansion for the trigonal band structure of graphene
journal, December 2010
- Winkler, R.; Zülicke, U.
- Physical Review B, Vol. 82, Issue 24
Group theoretical and topological analysis of the quantum spin Hall effect in silicene
journal, August 2013
- Geissler, F.; Budich, J. C.; Trauzettel, B.
- New Journal of Physics, Vol. 15, Issue 8
Strain-Induced Gap Modification in Black Phosphorus
journal, May 2014
- Rodin, A. S.; Carvalho, A.; Castro Neto, A. H.
- Physical Review Letters, Vol. 112, Issue 17
Electrons and holes in phosphorene
journal, September 2014
- Li, Pengke; Appelbaum, Ian
- Physical Review B, Vol. 90, Issue 11
Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium
journal, August 2011
- Liu, Cheng-Cheng; Feng, Wanxiang; Yao, Yugui
- Physical Review Letters, Vol. 107, Issue 7
Projector augmented-wave method
journal, December 1994
- Blöchl, P. E.
- Physical Review B, Vol. 50, Issue 24, p. 17953-17979
Generalized Gradient Approximation Made Simple
journal, October 1996
- Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
- Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
Ab initio molecular dynamics for open-shell transition metals
journal, November 1993
- Kresse, G.; Hafner, J.
- Physical Review B, Vol. 48, Issue 17
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999
- Kresse, G.; Joubert, D.
- Physical Review B, Vol. 59, Issue 3, p. 1758-1775
Strain and chirality effects on the mechanical and electronic properties of silicene and silicane under uniaxial tension
journal, October 2012
- Zhao, Huijuan
- Physics Letters A, Vol. 376, Issue 46
Electronic and optical properties of silicene under uni-axial and bi-axial mechanical strains: A first principle study
journal, July 2014
- Mohan, Brij; Kumar, Ashok; Ahluwalia, P. K.
- Physica E: Low-dimensional Systems and Nanostructures, Vol. 61
First-principles calculations of mechanical and electronic properties of silicene under strain
journal, June 2012
- Qin, Rui; Wang, Chun-Hai; Zhu, Wenjun
- AIP Advances, Vol. 2, Issue 2
Phonon instability and ideal strength of silicene under tension
journal, December 2014
- Yang, Chuanghua; Yu, Zhongyuan; Lu, Pengfei
- Computational Materials Science, Vol. 95
Uniaxial strain-induced mechanical and electronic property modulation of silicene
journal, September 2014
- Qin, Rui; Zhu, Wenjun; Zhang, Yalin
- Nanoscale Research Letters, Vol. 9, Issue 1
Electrically tunable band gap in silicene
journal, February 2012
- Drummond, N. D.; Zólyomi, V.; Fal'ko, V. I.
- Physical Review B, Vol. 85, Issue 7
Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus
journal, June 2014
- Tran, Vy; Soklaski, Ryan; Liang, Yufeng
- Physical Review B, Vol. 89, Issue 23
Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
journal, April 2014
- Fei, Ruixiang; Yang, Li
- Nano Letters, Vol. 14, Issue 5
Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field
journal, October 2014
- Li, Yan; Yang, Shengxue; Li, Jingbo
- The Journal of Physical Chemistry C, Vol. 118, Issue 41
Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene
journal, August 2014
- Peng, Xihong; Wei, Qun; Copple, Andrew
- Physical Review B, Vol. 90, Issue 8
Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst
journal, November 2014
- Sa, Baisheng; Li, Yan-Ling; Qi, Jingshan
- The Journal of Physical Chemistry C, Vol. 118, Issue 46
Works referencing / citing this record:
Computational study of silicene nanoribbon tunnel field-effect transistor
journal, May 2019
- Srivastava, Ashok; Fahad, Md. S.; Sharma, Ashwani K.
- Microsystem Technologies
A tight binding and $$\overrightarrow{{\boldsymbol{k}}}\cdot \overrightarrow{{\boldsymbol{p}}}$$ k → ⋅ p → study of monolayer stanene
journal, September 2017
- Jiang, Liming; Marconcini, Paolo; Hossian, Md Sharafat
- Scientific Reports, Vol. 7, Issue 1
Silicene: Recent theoretical advances
journal, December 2016
- Lew Yan Voon, L. C.; Zhu, Jiajie; Schwingenschlögl, Udo
- Applied Physics Reviews, Vol. 3, Issue 4
Spin-dependent k.p Hamiltonian of black phosphorene based on Löwdin partitioning method
journal, July 2018
- Kafaei, Narges; Beiranvand, Khadijeh; Sabaeian, Mohammad
- Journal of Applied Physics, Vol. 124, Issue 3
Functionalization of group-14 two-dimensional materials
journal, May 2018
- Krawiec, Mariusz
- Journal of Physics: Condensed Matter, Vol. 30, Issue 23
Focus on silicene and other 2D materials
journal, September 2015
- Ezawa, Motohiko; Le Lay, Guy
- New Journal of Physics, Vol. 17, Issue 9
theory for phosphorene: Effective -factors, Landau levels, and excitons
journal, September 2019
- Faria Junior, Paulo E.; Kurpas, Marcin; Gmitra, Martin
- Physical Review B, Vol. 100, Issue 11
Origin of the electromagnetic anisotropy in monolayer black phosphorus
journal, November 2019
- Li, Pengke
- Physical Review B, Vol. 100, Issue 20
Normal and skewed phosphorene nanoribbons in combined magnetic and electric fields
journal, September 2017
- Arsoski, Vladimir V.; Grujić, Marko M.; Čukarić, Nemanja A.
- Physical Review B, Vol. 96, Issue 12
Strain-engineered Majorana zero energy modes and Josephson state in black phosphorus
journal, August 2018
- Alidoust, Mohammad; Willatzen, Morten; Jauho, Antti-Pekka
- Physical Review B, Vol. 98, Issue 8
Fraunhofer response and supercurrent spin switching in black phosphorus with strain and disorder
journal, November 2018
- Alidoust, Mohammad; Willatzen, Morten; Jauho, Antti-Pekka
- Physical Review B, Vol. 98, Issue 18
Spin Orbit Coupling Gap and Indirect Gap in Strain-Tuned Topological Insulator-Antimonene
journal, October 2016
- Cheung, Chi-Ho; Fuh, Huei-Ru; Hsu, Ming-Chien
- Nanoscale Research Letters, Vol. 11, Issue 1
k.p theory for phosphorene: Effective g-factors, Landau levels, and excitons
text, January 2019
- Faria Junior, Paulo E.; Kurpas, Marcin; Gmitra, Martin
- Universität Regensburg
Spin Orbit Coupling Gap and Indirect Gap in Strain-Tuned Topological Insulator-Antimonene
journal, October 2016
- Cheung, Chi-Ho; Fuh, Huei-Ru; Hsu, Ming-Chien
- Nanoscale Research Letters, Vol. 11, Issue 1