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Title: Effective Hamiltonians for phosphorene and silicene

Abstract

We derived the effective Hamiltonians for silicene and phosphorene with strain, electric field and magnetic field using the method of invariants. Our paper extends the work of Geissler et al 2013 (New J. Phys. 15 085030) on silicene, and Li and Appelbaum 2014 (Phys. Rev. B 90, 115439) on phosphorene. Our Hamiltonians are compared to an equivalent one for graphene. For silicene, the expression for band warping is obtained analytically and found to be of different order than for graphene. We prove that a uniaxial strain does not open a gap, resolving contradictory numerical results in the literature. For phosphorene, it is shown that the bands near the Brillouin zone center only have terms in even powers of the wave vector. We predict that the energies change quadratically in the presence of a perpendicular external electric field but linearly in a perpendicular magnetic field, as opposed to those for silicene which vary linearly in both cases. Preliminary ab initio calculations for the intrinsic band structures have been carried out in order to evaluate some of the k center dot p parameters.

Authors:
 [1];  [2];  [3];  [3];  [4]
  1. The Citadel, Charleston, SC (United States)
  2. Argonne National Lab., Lomont, IL (United States)
  3. Univ. of North Carolina, Charlotte, NC (United States)
  4. Univ. of Denmark, Lyngby (Denmark)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division; The Citadel
OSTI Identifier:
1194161
Alternate Identifier(s):
OSTI ID: 1352839
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
New Journal of Physics
Additional Journal Information:
Journal Volume: 17; Journal Issue: 2; Journal ID: ISSN 1367-2630
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Lew Yan Voon, L. C., Lopez-Bezanilla, A., Wang, J., Zhang, Y., and Willatzen, M. Effective Hamiltonians for phosphorene and silicene. United States: N. p., 2015. Web. doi:10.1088/1367-2630/17/2/025004.
Lew Yan Voon, L. C., Lopez-Bezanilla, A., Wang, J., Zhang, Y., & Willatzen, M. Effective Hamiltonians for phosphorene and silicene. United States. https://doi.org/10.1088/1367-2630/17/2/025004
Lew Yan Voon, L. C., Lopez-Bezanilla, A., Wang, J., Zhang, Y., and Willatzen, M. Wed . "Effective Hamiltonians for phosphorene and silicene". United States. https://doi.org/10.1088/1367-2630/17/2/025004. https://www.osti.gov/servlets/purl/1194161.
@article{osti_1194161,
title = {Effective Hamiltonians for phosphorene and silicene},
author = {Lew Yan Voon, L. C. and Lopez-Bezanilla, A. and Wang, J. and Zhang, Y. and Willatzen, M.},
abstractNote = {We derived the effective Hamiltonians for silicene and phosphorene with strain, electric field and magnetic field using the method of invariants. Our paper extends the work of Geissler et al 2013 (New J. Phys. 15 085030) on silicene, and Li and Appelbaum 2014 (Phys. Rev. B 90, 115439) on phosphorene. Our Hamiltonians are compared to an equivalent one for graphene. For silicene, the expression for band warping is obtained analytically and found to be of different order than for graphene. We prove that a uniaxial strain does not open a gap, resolving contradictory numerical results in the literature. For phosphorene, it is shown that the bands near the Brillouin zone center only have terms in even powers of the wave vector. We predict that the energies change quadratically in the presence of a perpendicular external electric field but linearly in a perpendicular magnetic field, as opposed to those for silicene which vary linearly in both cases. Preliminary ab initio calculations for the intrinsic band structures have been carried out in order to evaluate some of the k center dot p parameters.},
doi = {10.1088/1367-2630/17/2/025004},
journal = {New Journal of Physics},
number = 2,
volume = 17,
place = {United States},
year = {Wed Feb 04 00:00:00 EST 2015},
month = {Wed Feb 04 00:00:00 EST 2015}
}

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Works referencing / citing this record:

Computational study of silicene nanoribbon tunnel field-effect transistor
journal, May 2019


A tight binding and $$\overrightarrow{{\boldsymbol{k}}}\cdot \overrightarrow{{\boldsymbol{p}}}$$ k → ⋅ p → study of monolayer stanene
journal, September 2017


Silicene: Recent theoretical advances
journal, December 2016

  • Lew Yan Voon, L. C.; Zhu, Jiajie; Schwingenschlögl, Udo
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Spin-dependent k.p Hamiltonian of black phosphorene based on Löwdin partitioning method
journal, July 2018

  • Kafaei, Narges; Beiranvand, Khadijeh; Sabaeian, Mohammad
  • Journal of Applied Physics, Vol. 124, Issue 3
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Functionalization of group-14 two-dimensional materials
journal, May 2018


Focus on silicene and other 2D materials
journal, September 2015


k · p theory for phosphorene: Effective g -factors, Landau levels, and excitons
journal, September 2019


Origin of the electromagnetic anisotropy in monolayer black phosphorus
journal, November 2019


Normal and skewed phosphorene nanoribbons in combined magnetic and electric fields
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Strain-engineered Majorana zero energy modes and φ 0 Josephson state in black phosphorus
journal, August 2018


Fraunhofer response and supercurrent spin switching in black phosphorus with strain and disorder
journal, November 2018


Spin Orbit Coupling Gap and Indirect Gap in Strain-Tuned Topological Insulator-Antimonene
journal, October 2016


k.p theory for phosphorene: Effective g-factors, Landau levels, and excitons
text, January 2019

  • Faria Junior, Paulo E.; Kurpas, Marcin; Gmitra, Martin
  • Universität Regensburg
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Spin Orbit Coupling Gap and Indirect Gap in Strain-Tuned Topological Insulator-Antimonene
journal, October 2016