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Title: Adiabatic perturbation theory of electronic stopping in insulators

Abstract

A model able to explain the complicated structure of electronic stopping at low velocities in insulating materials is presented. It is shown to be in good agreement with results obtained from time-dependent density-functional theory for the stopping of a channeling Si atom in a Si crystal. If we define the repeat frequency f=v/λ, where λ is the periodic repeat length of the crystal along the direction the channeling atom is traveling, and v is the velocity of the channeling atom, we find that electrons experience a perturbing force that varies in time at integer multiples l of f. This enables electronic excitations at low atom velocity, but their contributions diminish rapidly with increasing values of l. The expressions for stopping power are derived using adiabatic perturbation theory for many-electron systems, and they are then specialized to the case of independent electrons. Lastly, a simple model for the nonadiabatic matrix elements is described, along with the procedure for determining its parameters.

Authors:
 [1];  [1];  [1];  [2]
  1. Imperial College, London (United Kingdom)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1351139
Alternate Identifier(s):
OSTI ID: 1255349
Report Number(s):
LLNL-JRNL-727616
Journal ID: ISSN 2469-9950; PRBMDO
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 24; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING

Citation Formats

Horsfield, Andrew P., Lim, Anthony, Foulkes, W. M. C., and Correa, Alfredo A.. Adiabatic perturbation theory of electronic stopping in insulators. United States: N. p., 2016. Web. https://doi.org/10.1103/PhysRevB.93.245106.
Horsfield, Andrew P., Lim, Anthony, Foulkes, W. M. C., & Correa, Alfredo A.. Adiabatic perturbation theory of electronic stopping in insulators. United States. https://doi.org/10.1103/PhysRevB.93.245106
Horsfield, Andrew P., Lim, Anthony, Foulkes, W. M. C., and Correa, Alfredo A.. Thu . "Adiabatic perturbation theory of electronic stopping in insulators". United States. https://doi.org/10.1103/PhysRevB.93.245106. https://www.osti.gov/servlets/purl/1351139.
@article{osti_1351139,
title = {Adiabatic perturbation theory of electronic stopping in insulators},
author = {Horsfield, Andrew P. and Lim, Anthony and Foulkes, W. M. C. and Correa, Alfredo A.},
abstractNote = {A model able to explain the complicated structure of electronic stopping at low velocities in insulating materials is presented. It is shown to be in good agreement with results obtained from time-dependent density-functional theory for the stopping of a channeling Si atom in a Si crystal. If we define the repeat frequency f=v/λ, where λ is the periodic repeat length of the crystal along the direction the channeling atom is traveling, and v is the velocity of the channeling atom, we find that electrons experience a perturbing force that varies in time at integer multiples l of f. This enables electronic excitations at low atom velocity, but their contributions diminish rapidly with increasing values of l. The expressions for stopping power are derived using adiabatic perturbation theory for many-electron systems, and they are then specialized to the case of independent electrons. Lastly, a simple model for the nonadiabatic matrix elements is described, along with the procedure for determining its parameters.},
doi = {10.1103/PhysRevB.93.245106},
journal = {Physical Review B},
number = 24,
volume = 93,
place = {United States},
year = {2016},
month = {6}
}

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Cited by: 3 works
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